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SANG Xi-en, WANG Fang, LIU Jun-jie, LIU Yu-huai. Enhancing the performance of AlGaN deep-ultraviolet laser diodes without an electron blocking layer by using a thin undoped Al0.8Ga0.2N strip layer structure[J]. Chinese Optics. doi: 10.37188/CO.EN-2025-0033
Citation: SANG Xi-en, WANG Fang, LIU Jun-jie, LIU Yu-huai. Enhancing the performance of AlGaN deep-ultraviolet laser diodes without an electron blocking layer by using a thin undoped Al0.8Ga0.2N strip layer structure[J]. Chinese Optics. doi: 10.37188/CO.EN-2025-0033
shu

Enhancing the performance of AlGaN deep-ultraviolet laser diodes without an electron blocking layer by using a thin undoped Al0.8Ga0.2N strip layer structure

cstr: 32171.14.CO.EN-2025-0033
  • 1.

    International Joint-Laboratory of Electronic Materials and Systems of Henan Province, National Center for International Joint Research of Electronic Materials and Systems, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou 450001, China

  • 2.

    International Joint Laboratory for Integrated Circuits Design and Application, Ministry of Education, Zhengzhou 450001, China;

  • 3.

    Research Institute of Industrial Technology Co. Ltd., Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou 450001, China

  • 4.

    Zhengzhou Way Do Electronics Co. Ltd., Zhengzhou 450001, China

  • 5.

    School of Electrical and Information Engineering, North Minzu University, Yinchuan750001, China

Funds:  Supported by National Natural Science Foundation of China (No. 62174148); National Key Research and Development Program (No. 2022YFE0112000); Key Program for International Joint Research of Henan Province (No. 231111520300)
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  • Author Bio:

    SANG Xi-en (1999—), Male, Zhumadian, Henan Province, Ph.D. enrolled in Zhengzhou University University for Ph.D. in 2024, mainly engaged in the research of nitride semiconductor devices and materials. E-mail: zzuxien@163.com

    WANG Fang (1973—), Female, Zhoukou, Henan, Ph.D., Professor, Ph.D. Associate Professor at the School of Electrical and Information Engineering, Zhengzhou University, China. She received her Ph.D. from Mie University, Japan. Her research focuses on AlGaN-based deep-ultraviolet (DUV) optoelectronic devices and semiconductor lasers, particularly in device physics and performance enhancement. She has published over 60 peer-reviewed papers and has contributed to the development of high-performance DUV optoelectronic devices. E-mail: iefwang@zzu.edu.cn

    LIU Yu-huai (1969—), Male, Fuyang, Anhui, Ph.D., Professor, Ph.D. Supervisor, joined Zhengzhou University in 2011, worked in Japan from nitride semiconductor materials and devices research and product development for more than ten years. His research interests include the core technology of nitride semiconductor-based blue LEDs and LDs, UV LEDs, IR LDs and HBTs, HEMTs and other devices. E-mail: ieyhliu@zzu.edu.cn

  • Corresponding author: iefwang@zzu.edu.cn; ieyhliu@zzu.edu.cn
  • Received Date: 16 Jun 2025
  • Rev Recd Date: 08 Jul 2026
  • Accepted Date: 01 Jun 2025
    • Available Online: 20 Sep 2025
    Abstract

  • AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) face performance challenges due to electron leakage and poor hole injection which is often worsened by polarization effects from conventional electron blocking layers (EBLs). To overcome these limitations, we propose an EBL-free DUV LD design incorporating a 1-nm undoped Al0.8Ga0.2N thin strip layer after the last quantum barrier. Using PICS3D simulations, we evaluate the optical and electrical characteristics. Results show a significant increase in effective electron barrier height (from 158.2 meV to 420.7 meV) and a reduction in hole barrier height (from 149.2 meV to 62.8 meV), which enhance hole injection and reduce electron leakage. The optimized structure (LD3) achieves a 14% increase in output power, improved slope efficiency (1.85 W/A), and lower threshold current. This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions, improving recombination efficiency.

     

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