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SHEN Yan-chun, HE Zhen-wu, LUO Zhuo-bin, PAN Guan-quan, ZHAN Pei-yi, WEI Dong-shan, ZHAO Yi-liang. A highly efficient terahertz amplitude modulator based on the phase transition of MoS2[J]. Chinese Optics. doi: 10.3724/CO.EN-2026-0023
Citation: SHEN Yan-chun, HE Zhen-wu, LUO Zhuo-bin, PAN Guan-quan, ZHAN Pei-yi, WEI Dong-shan, ZHAO Yi-liang. A highly efficient terahertz amplitude modulator based on the phase transition of MoS2[J]. Chinese Optics. doi: 10.3724/CO.EN-2026-0023

A highly efficient terahertz amplitude modulator based on the phase transition of MoS2

cstr: 32171.14.CO.EN-2026-0023
Funds:  Supported by National Natural Science Foundation of China (No. 62475276, No. 12204457)
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  • Author Bio:

    SHEN Yan-chun (1980—), Male, born in Guangzhou, Guangdong Province, Ph.D. and Professor. His research interest is Terahertz liquid crystal devices. E-mail: shenyanchun@gtxy.edu.cn

    WEI Dong-shan (1979—), Male, born in Chibi, Hubei Province, Ph.D., Professor and Doctor’s supervisor. His research interests include Terahertz spectroscopy and optoelectric sensing detection technology. Email: dswei@hainnu.edu.cn

  • Corresponding author: dswei@hainnu.edu.cn
  • Received Date: 03 Jun 2026
  • Accepted Date: 07 Jul 2026
  • Available Online: 28 Sep 2026
  • Terahertz (THz) wave modulation via metasurfaces exhibits considerable applications in THz communications, imaging, and detection. In this study, a molybdenum disulfide (MoS2) metasurface is proposed to realize THz amplitude modulation at very low trigger voltages. The unit micro-nanostructure is characterized by a broken “H” shape linked by a MoS2 layer. Simulation results indicate that the electrical control of the phase transition at the “H” junction can enable substantial amplitude modulation at 0.58 THz with a modulation rate of 98% and a low insertion loss of 20%. The modulation mechanism is elucidated by analyzing the electric field distributions at different structural positions and the diffraction patterns before and after the phase transition. To verify the design, electrical measurements in experiment are carried out on a MoS2 layer with the same thickness of 2 μm and the resistivity of the measured MoS2 layer varied by nearly six orders of magnitude with a minor change of the low trigger voltage from 0 to ±1 V, validating the feasibility of the interfacial metasurface control. This study is anticipated to offer a novel method for THz amplitude modulation, and promote the practical development of THz modulation devices.

     

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