| Citation: | CHEN Si-qi, DU Long-kun, CAO Bao-feng, LI Deng-hui, NING Wang-shi. Investigation of damage rules in silicon PIN photodiodes under xenon lamp irradiation[J]. Chinese Optics. doi: 10.37188/CO.2026-0024
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This study investigates the performance degradation and underlying damage mechanisms of silicon PIN photodiodes under xenon lamp irradiation. To this end, detectivity is defined and operationalized. A 50 kW xenon lamp irradiation test platform was developed, with the S5106-type silicon PIN photodiodes selected as the representative test device. Real-time monitoring of output photocurrent and surface temperature enabled systematic analysis of the factors governing detectivity degradation, as well as characterization of the damage threshold. A damage threshold model for silicon PIN photodiodes was developed based on the one-dimensional heat diffusion equation. Model accuracy was validated against the experimentally measured threshold data. Silicon PIN photodiode damage was categorized into two regimes—soft damage and hard damage—based on the recoverability of detectivity. Under soft damage conditions, the detectivity of the device exhibited a nonlinear negative correlation with both irradiation time and surface temperature. The hard damage irradiance thresholds followed an inverse-square-root dependence on irradiation time, a trend fully consistent with the damage threshold model. Hard damage was observed at a minimum irradiance of approximately 6.6 W/cm2, corresponding to an irradiation time of about 382 s. Under this threshold condition, the surface temperature ranged within 385.77±4.16°C. Theoretical analysis indicated that soft damage primarily arose from thermally induced degradation of carrier mobility and increased leakage current. Conversely, hard damage resulted from melting and cracking of the silicone rubber optical window, as well as thermally induced functional failure of the PN junction. The findings provide a quantitative basis for performance evaluation and protection design of silicon PIN photodiodes employed in broad-spectrum high-intensity optical detection scenarios.
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