A highly efficient terahertz amplitude modulator based on the phase transition of MoS2
doi: 10.3724/CO.EN-2026-0023
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摘要:
基于超表面的太赫兹(THz)波调控在太赫兹通信、成像及探测领域具有重要应用价值。本研究提出一种二硫化钼(MoS2)超表面结构,可在极低驱动电压下实现太赫兹振幅调制,其单元微纳结构为二硫化钼层连接的非对称 “H” 型。仿真结果表明,通过电控调控 “H” 型连接处的相变,该调制器可在0.58 THz处实现大幅振幅调制,调制深度达98%,插入损耗低至20%,其调控机理可通过分析相变前后不同结构位置的电场分布与衍射图样得到解释。为验证设计方案,对厚度为 2 μm 的二硫化钼薄膜进行电学测试,结果显示:在0~±1 V的低驱动电压小幅变化下,二硫化钼薄膜电阻率变化近6个数量级,证实了界面型超表面调控的可行性。本研究可为太赫兹振幅调制提供一种新方法,有望推动太赫兹调控器件的实用化发展。
Abstract:Terahertz (THz) wave modulation via metasurfaces exhibits considerable applications in THz communications, imaging, and detection. In this study, a molybdenum disulfide (MoS2) metasurface is proposed to realize THz amplitude modulation at very low trigger voltages. The unit micro-nanostructure is characterized by a broken “H” shape linked by a MoS2 layer. Simulation results indicate that the electrical control of the phase transition at the “H” junction can enable substantial amplitude modulation at 0.58 THz with a modulation rate of 98% and a low insertion loss of 20%. The modulation mechanism is elucidated by analyzing the electric field distributions at different structural positions and the diffraction patterns before and after the phase transition. To verify the design, electrical measurements in experiment are carried out on a MoS2 layer with the same thickness of 2 μm and the resistivity of the measured MoS2 layer varied by nearly six orders of magnitude with a minor change of the low trigger voltage from 0 to ±1 V, validating the feasibility of the interfacial metasurface control. This study is anticipated to offer a novel method for THz amplitude modulation, and promote the practical development of THz modulation devices.
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Figure 3. (a) The unit micro-nanostructure of the electrically controlled MoS2 metasurface where the white region represents the Ag electrode, the blue region represents the SiO2 layer under the layer of the Ag electrode and the grey region represents the MoS2 layer; (b) Resonance spectra of the unit micro-nanostructures before and after the electrical-controlled phase transition (the light red region indicates the operating frequency); (c) Electric field distribution at the interface of the unit micro-nanostructures when MoS2 is in the 2H phase. (d) Electric field distribution at the interface of the unit micro-nanostructures when MoS2 is in the 1T phase.
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