面向单端与推挽调制的相同有源层结构双卡帕分布反馈激光器腔体增强效应的仿真研究

刘子铭; Richard SCHATZ; 邱橙; 张楠; 陈泳屹; 秦莉; 王磊; 王立军

doi:10.3724/CO.EN-2026-0007

面向单端与推挽调制的相同有源层结构双卡帕分布反馈激光器腔体增强效应的仿真研究

刘子铭^{1, 2, 3,},
Richard SCHATZ^4, ,,
邱橙^1, ,,
张楠^3, ,,
陈泳屹^{1, 5},
秦莉¹,
王磊³,
王立军^{1, 3}

1.
中国科学院长春光学精密机械与物理研究所, 特种发光科学与技术全国重点实验室, 吉林长春 130033
2.
中国科学院大学, 北京 100049
3.
鹏城实验室, 光电信息与光纤通信研究部, 广东深圳 518055
4.
瑞典皇家理工学院, 应用物理与光子学系, 瑞典斯德哥尔摩 SE-100 44
5.
吉光半导体科技有限公司, 吉林长春 130033

详细信息

中图分类号: TN248.4;
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出版历程
- 收稿日期: 2026-03-02
- 录用日期: 2026-04-22
- 网络出版日期: 2026-09-15

Numerical investigation of a cavity-enhanced dual-κ DFB laser with an identical active layer for single-ended and push-pull modulation

doi: 10.3724/CO.EN-2026-0007

LIU Zi-Ming^{1, 2, 3
,},
SCHATZ Richard^{4
, ,},
QIU Cheng^{1
, ,},
ZHANG Nan^{3
, ,},
CHEN Yong-Yi^{1, 5},
QIN Li¹,
WANG Lei³,
WANG Li-Jun^{1, 3}

1.
State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China
3.
Department of Optoelectronic Information and Optical Fiber Communication, Pengcheng Laboratory, Shenzhen 518055, China
4.
Department of Applied Physics and Photonics, KTH Royal Institute of Technology, Stockholm SE-100 44, Sweden
5.
Jlight Semiconductor Technology Co., Ltd., Changchun 130033, China

Funds: Supported by the National Key R & D Program of China (No. 2023YFB2805100); the Science and Technology Development Project of Jilin Province (No. SKL202402019); the National Natural Science Foundation of China (No. 62275245); the Dawn Talent Training Program of CIOMP; the Science and Technology Project of Tianjin (No. 24YFYSHZ00250); the Major Key Project of Pengcheng Laboratory; National Key Research and Development Program of China (No. 2024YFB29NL00100); the PCL-CMCC Foundation for science and innovation (No. 2024ZY2A0020); Mobile Information Networks-National Science and Technology Major Project (No. 2026ZD1308000).

More Information

Author Bio:
LIU Zi-ming (1998—) is currently a Ph.D. candidate at Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, and is jointly trained at the Pengcheng Laboratory. His research interests include the development of high–speed directly modulated lasers and hybrid external–cavity lasers. E-mail: liuziming98@163.com

SCHATZ Richard (1963—) received the Ph.D. degree from the Royal Institute of Technology (KTH), Stockholm, Sweden, in 1995. His research is focused on the modeling, design, and characterization of fiber–optical transmitters (edge emitter lasers, quantum cascade lasers, VCSELs, and modulators), both for on–off keying and multilevel modulation formats. E-mail: rschatz@kth.se

QIU Cheng (1984—) received the Ph.D. degree from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, in 2019. His current research interests include wide range tunable laser source, optical networks on chips, optical field tuning on photonics active device, inverse design of passive and active photonic devices. E-mail: qiucheng@ciomp.ac.cn

ZHANG Nan (1984—) received the Ph.D. degree in condensed matter physics from the Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, in 2014. His research interests include high–speed electro–optic modulators, semiconductor lasers, and photonic integration, as well as silicon–based optoelectronic heterogeneous integration and device physics. E-mail: zhangn06@pcl.ac.cn

Corresponding author: rschatz@kth.se; qiucheng@ciomp.ac.cn; zhangn06@pcl.ac.cn

摘要

摘要:
随着大模型和云计算的快速发展，数据中心短距光互连对传输速率提出了更高要求。尽管光子-光子谐振(PPR)效应和失谐加载(DL)效应为提升直接调制激光器(DML)带宽提供了有效途径，但其实现通常面临结构的复杂性与调制响应的平坦性之间的权衡：获得高带宽和较平坦的小信号响应，往往需要对接生长等复杂工艺，而结构较简单的相同有源层(IAL)设计则容易产生起伏较大的小信号调制响应。本文针对这一问题，仿真研究了一种基于IAL结构的双卡帕光栅分布反馈(DFB)激光器。该设计无需对接生长工艺，同时改善小信号调制响应的平坦性，比较了其在单端调制和推挽调制两种方式下的性能。仿真表明，优化后的器件在单端调制下可通过多个PPR峰实现185 GHz的小信号仿真带宽；在推挽调制下可抑制低频滚降并获得94 GHz的小信号仿真带宽。两种调制方式在200 Gbit/s NRZ条件下均可得到清晰的仿真眼图，显示出其在高速调制中的应用潜力。此外，容差分析表明，该结构对典型工艺偏差具有较好的鲁棒性。研究结果表明，所提出的IAL结构的双卡帕光栅DFB激光器有望为未来短距光互连提供一种有前景的设计方案，但其功耗及实际电带宽限制仍有待进一步研究。
- 直接调制激光器 /
- 分布反馈激光器 /
- 单端调制 /
- 推挽调制 /
- 光子-光子谐振效应 /
- 失谐加载效应
Abstract:
The exponential growth of large models and cloud computing is driving demand for unprecedented modulation speeds in short-reach data center links. While cavity-enhanced effects such as photon-photon resonance (PPR) and detuned loading (DL) offer a promising pathway, their practical implementation in directly modulated lasers (DMLs) often faces a critical trade-off: achieving a flat, high-bandwidth response typically requires complex fabrication techniques like butt-joint regrowth, whereas simpler identical active layer (IAL) designs suffer from uneven small-signal modulation response. In this work, we numerically investigate a dual-κ grating distributed feedback (DFB) laser based on an IAL structure that overcomes this trade-off. The design eliminates the need for butt-joint regrowth while effectively flattening the small-signal response. We compare its performance under single-ended and push-pull modulation schemes. The optimized laser exhibits a simulated small-signal modulation bandwidth of 185 GHz with multiple PPR peaks under single-ended modulation, and a simulated small-signal modulation bandwidth of 94 GHz with suppressed low-frequency roll-off under push-pull modulation. Notably, both schemes generate clear eye diagrams at 200 Gbit/s NRZ in simulation, demonstrating their potential for ultra-high-speed operation. Furthermore, tolerance analysis confirms robustness against typical fabrication variations. The proposed IAL-based dual-κ DFB laser therefore appears to be a promising cavity-design approach for future high-speed short-reach optical interconnects. Further work is still needed to address power efficiency and practical electrical bandwidth limitations.
- directly modulated laser /
- distributed feedback laser /
- single-ended modulation /
- push-pull modulation /
- photon-photon resonance effect /
- detuned loading effect

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Figure 1. (a) Schematic of dual-κ DFB laser (b) cross sectional view of the proposed laser.

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Figure 2. (a) Distribution profile of main mode total and reactive photon densities in laser cavity (b) the reflection profile for low κ-value κ₁ and high κ-value κ₂.

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Figure 3. Resonance frequencies of different laser modes at low-κ section lengths from 250 to 400 μm.

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Figure 4. Normalized single-ended modulation response at κ₂-values of high-κ section from 80 to 120 cm⁻¹.

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Figure 5. Normalized single-ended modulation response at high-κ section lengths from 50 to 150 μm.

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Figure 6. Normalized push-pull modulation response in the modulation (rear) section combined with high-κ (middle) and low-κ (front) sections, respectively.

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Figure 7. Normalized push-pull modulation response at κ₂-values of high-κ section from 80 to 120 cm⁻¹.

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Figure 8. Normalized push-pull modulation response at low-κ section lengths from 200 to 400 μm.

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Figure 9. Round-trip gain and lasing mode of the optimized laser for single-ended modulation.

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Figure 10. Lasing spectrum of the optimized laser for single-ended modulation.

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Figure 11. Normalized modulation response of three structures for single-ended modulation.

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Figure 12. Eye diagrams for single-ended modulation in (a) initial laser (b) single-κ grating laser and (c) optimized laser structures.

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Figure 13. Round-trip gain and lasing mode of the optimized laser for push-pull modulation.

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Figure 14. Lasing spectrum of the optimized laser for push-pull modulation.

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Figure 15. Normalized modulation response of three structures for push-pull modulation.

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Figure 16. Eye diagrams for push-pull modulation in (a) initial laser (b) single-κ grating laser and (c) optimized laser structures.

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Figure 17. Effect of an equivalent first-order external electrical low-pass limitation on the optimized small-signal responses: (a) single-ended modulation and (b) push-pull modulation.

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Figure 18. Effect of random back-facet phase on the single-mode yield for single-ended modulation laser.

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Figure 19. Effect of fabrication variations on the small-signal response of the optimized single-ended modulation laser: (a) the κ₁-value of the low-κ and modulation sections and (b) the κ₂-value of the high-κ section.

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Figure 20. Effect of fabrication variations on the small-signal response of the optimized single-ended modulation laser: (a) the length of the low-κ section and (b) the length of the modulation section.

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Figure 21. Effect of random back-facet phase on the single-mode yield for push-pull modulation laser.

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Figure 22. Effect of fabrication variations on the small-signal response of the optimized push-pull modulation laser: (a) the κ₁-value of the low-κ and modulation sections and (b) the κ₂-value of the high-κ section.

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Figure 23. Effect of fabrication variations on the small-signal response of the optimized push-pull modulation laser: (a) the length of the low-κ section and (b) the length of the modulation section.

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Table 1. Simulation parameters of dual-κ DFB laser.

Parameter	Value
Length of modulation section	50 μm
Length of high-κ section	100 μm
Length of low-κ section	350 μm
Reflectivity of front (rear) facet	0 % (28.4%)
Width of active region	1.2 μm
Thickness of active layer	100 nm
Value of grating κ₁	30 cm⁻¹
Value of grating κ₂	100 cm⁻¹
Internal loss	10 cm⁻¹
Linewidth enhancement factor	4
Optical confinement factor	0.2
Effective index	3.276
Group index	3.658
Differential gain	5.0e-16 cm⁻¹
Transparency carrier density	1.5e18 cm⁻³
Linear recombination	1.0e8 s⁻¹
Bimolecular recombination coefficient	1.5e-10 cm³/s
Auger recombination coefficient	3.5e-29 cm⁶/s

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Table 2. Optimized parameters of single-ended modulation laser.

Parameter	Value
Length of high-κ section	50 μm
Value of grating κ₂	120 cm⁻¹

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Table 3. Optimized parameters of push-pull modulation laser.

Parameter	Value
Length of low-κ section	200 μm
Current of high-κ section	80 mA
Modulation regions	modulation (rear) and low-κ (front) sections

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