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复杂印刷电路板表面相位保真条纹超分辨三维测量方法

吴福培 胡聪 韩强 叶玮琳

吴福培, 胡聪, 韩强, 叶玮琳. 复杂印刷电路板表面相位保真条纹超分辨三维测量方法[J]. 中国光学(中英文). doi: 10.37188/CO.2026-0061
引用本文: 吴福培, 胡聪, 韩强, 叶玮琳. 复杂印刷电路板表面相位保真条纹超分辨三维测量方法[J]. 中国光学(中英文). doi: 10.37188/CO.2026-0061
WU Fu-pei, HU Cong, HAN Qiang, YEEWEI-LIN. Phase-preserving fringe super-resolution for three-dimensional measurement of complex printed circuit board surfaces[J]. Chinese Optics. doi: 10.37188/CO.2026-0061
Citation: WU Fu-pei, HU Cong, HAN Qiang, YEEWEI-LIN. Phase-preserving fringe super-resolution for three-dimensional measurement of complex printed circuit board surfaces[J]. Chinese Optics. doi: 10.37188/CO.2026-0061

复杂印刷电路板表面相位保真条纹超分辨三维测量方法

cstr: 32171.14.CO.2026-0061
基金项目: 国家自然科学基金(No. 61573233);广东省自然科学基金(No. 2021A1515010661);广东省普通高校创新团队资助项目(No. 2020KCXTD012)
详细信息
    作者简介:

    吴福培 (1980—), 男,广西玉林人,博士,教授 , 2009年于华南理工大学机械工程专业获得博士学位,现就职于汕头大学机械工程系,主要研究方向为自动光学检测和3D测量。 E-mail:fpwu@stu.edu.cn

    胡 聪(1997—),男,湖北荆州人,硕士,工程师 ,2026年于汕头大学机械专业获得硕士学位,现就职于广东弘景光电科技股份有限公司,担任软件研发工程师。研究方向:结构光三维测量。E-mail:1193809355@qq.com

  • 中图分类号: TP394.1

Phase-preserving fringe super-resolution for three-dimensional measurement of complex printed circuit board surfaces

Funds: Supported by National Natural Science Foundation of China (No. 61573233); National Natural Science Found-ation of Guangdong, China (No. 2021A1515010661); the Guangdong Provincial University Innovation TeamProject (No. 2020KCXTD012)
More Information
    Corresponding author: fpwu@stu.edu.cn
  • 摘要:
    目的 

    针对复杂反光印刷电路板(printed circuit board,PCB)表面条纹测量中统一图像插值易破坏条纹正弦性、弯曲条纹条件下插值方向与局部等相位线不一致以及低调制度区域误差易扩散的问题,提出一种测量导向的相位保真条纹超分辨重采样方法。

    方法 

    该方法在图像灰度域完成条纹超分辨,但利用相位域解算得到的载波强度指数、局部调制度和多频包裹相位作为物理约束。首先,利用归一化载波强度指数对条纹脊线、谷线及过渡区域进行结构解耦,并结合脊谷距离与局部调制度构建联合权重;随后,基于多频相移信息估计二维条纹对齐位移场,经局部相关细化与二维总变差正则化后,将原始条纹映射至条纹对齐域并实施方向性插值;最后,依据位移场梯度与局部相位变化率构建平坦区陡变区自适应融合策略,实现面向相位保真的条纹重采样与三维测量。

    结果 

    在3 mm、6 mm 和9 mm 量块实验中,所提方法将平均绝对误差由 0.0290 mm 降至 0.0208 mm,均方根误差由0.0428 mm 降至 0.0295 mm;在 PCB 引脚区域和晶振封装区域中,所提方法均改善了相位连续性和三维重建稳定性。以引脚区域为例,与图像双三次插值相比,所提方法将平均绝对误差由 0.1753 mm降至0.0254 mm,降幅约为 85.5%。

    结论 

    实验结果表明,该方法在当前 PCB 引脚区域和晶振封装局部结构中能够提高条纹重采样后的相位一致性和点云采样密度,并降低局部重建误差。

     

  • 图 1  三维重建流程 括号中标明各模块的主要操作域

    Figure 1.  Flow chart of the proposed 3D reconstruction framework. The terms in parentheses indicate the main operation domain of each module

    图 2  调制条纹图像

    Figure 2.  Fringe pattern image

    图 3  自适应插值流程图

    Figure 3.  Adaptive interpolation flowchart

    图 4  实验平台。((a)结构光系统示意图;(b)实验平台实物图)

    Figure 4.  Experimental setup. ((a) Structured light system; (b) photograph of the experimental platform)

    图 5  3mm标准量块的表面平面度剖面对比

    Figure 5.  Comparison of surface flatness profiles for a 3mm gauge block

    图 6  PCB表面重建效果对比((a)原始条纹图像(b)点云超分辨前后对比)

    Figure 6.  Comparison of PCB surface reconstruction results: (a) original fringe image; (b) point cloud before and after super-resolution

    图 7  引脚区域与晶振封装区域的原始图像及相位结果对比。左列为高密度引脚区域,右列为晶振封装区域。(a)原始图像;(b)原始相位结果;(c)所提方法处理后的相位结果。

    Figure 7.  Comparison of original images and phase results in the pin region and crystal oscillator package region. The left column shows the high-density pin region, and the right column shows the crystal oscillator package region. (a) Original images; (b) original phase results; (c) phase results obtained by the proposed method.

    图 8  引脚区域与晶振封装区域的多方法三维重建结果对比。左列为高密度引脚区域,右列为晶振封装区域。(a)原始重建结果;(b)图像双三次插值结果;(c)基于深度学习的图像超分辨结果;(d)相位双三次插值结果;(e)所提方法的重建结果。

    Figure 8.  Comparison of 3D reconstruction results obtained by different methods in the pin region and crystal oscillator package region. The left column shows the high-density pin region, and the right column shows the crystal oscillator package region. (a) Original reconstruction; (b) image bicubic interpolation; (c) deep-learning-based image super-resolution; (d) phase bicubic interpolation ; (e) proposed method.

    图 9  复杂PCB引脚表面的重建质量综合评估(a)高度截图轮廓对比(b)绝对重建误差分布

    Figure 9.  Comprehensive evaluation of reconstruction quality on a complex PCB pin surface: (a) height profile comparison; (b) absolute reconstruction error distribution

    图 10  不同方法在 PCB 局部 ROI 内的绝对误差累积分布曲线

    Figure 10.  Cumulative distribution curves of absolute errors for different methods within the PCB local ROI.

    图 11  相位域保真性能的局部对比。

    Figure 11.  Local comparison of phase-domain fidelity performance.

    图 12  沿图11中标记剖面线提取的包裹相位曲线对比。

    Figure 12.  Comparison of wrapped-phase curves extracted along the marked profile line in Fig. 11.

    表  1  不同方法主导计算代价对比

    Table  1.   Comparison of dominant computational costs among different methods

    方法时间复杂度空间复杂度依赖
    双三次插值O(R·C·t²)O(R·C·t²)CPU
    样条插值O(R·C·t²)O(R·C·t²)CPU
    本文方法O((N+F+$ {I}_{TV} $)·R·C + R·C·t²)O(R·C·t² + R·C)CPU
    深度学习O(k·R·C·t²), $ \mathrm{k}\gg 1 $O(Model size + R·C·t²)GPU; 需预训练模型
    下载: 导出CSV

    表  6  主要误差指标的95%置信区间

    Table  6.   95% confidence intervals of the main error metrics

    实验场景 方法 >指标 均值 ± SD/mm 95% CI/mm
    标准量块
    原始重建 MAE 0.0290 ± 0.0021 [0.0275, 0.0305]
    本文方法 MAE 0.0208 ± 0.0015 [0.0197, 0.0219]
    原始重建 RMSE 0.0428 ± 0.0037 [0.0402, 0.0454]
    本文方法 RMSE 0.0295 ± 0.0026 [0.0276, 0.0314]
    引脚
    图像双三次 MAE 0.1753 ± 0.0120 [0.1667, 0.1839]
    深度学习 MAE 0.1721 ± 0.0140 [0.1621, 0.1821]
    相位双三次 MAE 0.0485 ± 0.0040 [0.0456, 0.0514]
    本文方法 MAE 0.0254 ± 0.0021 [0.0239, 0.0269]
    本文方法 RMSE 0.0298 ± 0.0026 [0.0279, 0.0317]
    本文方法 MaxAE 0.0820 ± 0.0110 [0.0741, 0.0899]
    晶振 图像双三次 MAE 0.1626 ± 0.0105 [0.1551, 0.1701]
    深度学习 MAE 0.1667 ± 0.0120 [0.1581, 0.1753]
    相位双三次 MAE 0.0675 ± 0.0055 [0.0636, 0.0714]
    本文方法 MAE 0.0221 ± 0.0018 [0.0208, 0.0234]
    本文方法 RMSE 0.0347 ± 0.0030 [0.0326, 0.0368]
    本文方法 MaxAE 0.0950 ± 0.0120 [0.0864,0.1036]

    下载: 导出CSV

    表  2  不同分辨率下测量结果对比

    Table  2.   Comparison of measurement results under different resolutions

    量块超分辨前超分辨后
    MAE/mmRMSE/mmMAE/mmRMSE/mm
    3mm0.0253 ± 0.00180.0361 ± 0.00320.0212 ± 0.0015**0.0226 ± 0.0020**
    6mm0.0272 ± 0.00200.0479 ± 0.00410.0164 ± 0.0012**0.0332 ± 0.0030**
    9mm0.0345 ± 0.00260.0443 ± 0.00380.0249 ± 0.0019**0.0326 ± 0.0028**
    平均0.0290 ± 0.00210.0428 ± 0.00370.0208 ± 0.00150.0295 ± 0.0026
    下载: 导出CSV

    表  3  不同方法测量结果对比

    Table  3.   Comparison of measurement results by different methods

    方法RMSE/mmPlanarity Error/mm平均耗时/s
    图像双三次0.0497 ± 0.0038**0.0128 ± 0.0011**0.064 ± 0.004
    深度学习0.0482 ± 0.0042**0.0095 ± 0.0009**2.684 ± 0.100
    相位双三次0.0286 ± 0.0023**0.0078 ± 0.0007**0.071 ± 0.005
    所提方法(无几何校正)0.0395 ± 0.0030**0.0051 ± 0.0005*0.184 ± 0.012
    所提方法(无权重融合)0.0291 ± 0.0024**0.0073 ± 0.0007**0.263 ± 0.016
    所提方法0.0226 ± 0.00180.0046 ± 0.00040.342 ± 0.020
    下载: 导出CSV

    表  4  引脚区域与晶振封装区域不同方法的重建误差对比

    Table  4.   Reconstruction errors of different methods in the pin region and crystal oscillator package region

    区域方法MAE/mmRMSE/mmSTD/mmMaxAE/mmPlanarity Error/mm平均耗时/s
    引脚图像双三次0.1753 ± 0.0120**0.2057 ± 0.0160**0.0951 ± 0.0085**0.560 ± 0.060**0.0201 ± 0.0020**0.066 ± 0.005
    深度学习0.1721 ± 0.0140**0.2184 ± 0.0180**0.0758 ± 0.0070**0.590 ± 0.065**0.0185 ± 0.0018**3.126 ± 0.130
    相位双三次0.0485 ± 0.0040**0.0552 ± 0.0048**0.0483 ± 0.0042**0.150 ± 0.020**0.0123 ± 0.0013**0.074 ± 0.005
    本文方法0.0254 ± 0.00210.0298 ± 0.00260.0126 ± 0.00140.082 ± 0.0110.0081 ± 0.00080.349 ± 0.020
    晶振图像双三次0.1626 ± 0.0105**0.2416 ± 0.0170**0.1180 ± 0.0100**0.610 ± 0.070**0.0220 ± 0.0020**0.068 ± 0.005
    深度学习0.1667 ± 0.0120**0.2447 ± 0.0185**0.1260 ± 0.0110**0.630 ± 0.075**0.0292 ± 0.0025**3.184 ± 0.135
    相位双三次0.0675 ± 0.0055**0.1332 ± 0.0120**0.0815 ± 0.0075**0.310 ± 0.040**0.0180 ± 0.00160.079 ± 0.006
    本文方法0.0221 ± 0.00180.0347 ± 0.00300.0158 ± 0.00160.095 ± 0.0120.0176 ± 0.00140.361 ± 0.022
    下载: 导出CSV

    表  5  不同方法在相位域中的定量比较

    Table  5.   Quantitative comparison of different methods in the phase domain

    方法phase MAE / radphase RMSE / rad相位误差 STD / rad结果说明
    图像双三次0.0920.1240.083边缘附近易出现局部振荡
    与周期性扰动
    相位双三次0.0500.0740.054可减弱相位扰动,
    但边缘存在过平滑
    本文方法0.0280.0370.025平坦区与边缘区均与参考
    结果保持较高一致性
    下载: 导出CSV

    表  7  PCB 引脚区域不同图像扰动条件下的鲁棒性分析

    Table  7.   Robustness analysis under different image perturbation conditions in the PCB pin region

    扰动类型条件图像双三次
    MAE/mm
    相位双三次
    MAE/mm
    本文方法
    MAE/mm
    图像双三次
    RMSE/mm
    相位双三次
    RMSE/mm
    本文方法
    RMSE/mm
    无扰动Baseline0.1753 ± 0.01200.0485 ± 0.00400.0254 ± 0.00210.2057 ± 0.01600.0552 ± 0.00480.0298 ± 0.0026
    高斯噪声σ = 0.010.1846 ± 0.01340.0506 ± 0.00440.0262 ± 0.00240.2162 ± 0.01760.0574 ± 0.00520.0307 ± 0.0029
    σ = 0.020.1978 ± 0.01520.0539 ± 0.00490.0274 ± 0.00280.2315 ± 0.01950.0612 ± 0.00590.0321 ± 0.0032
    σ = 0.040.2265 ± 0.01960.0618 ± 0.00580.0301 ± 0.00340.2648 ± 0.02400.0699 ± 0.00680.0351 ± 0.0040
    曝光扰动α = 0.70.2072 ± 0.01650.0556 ± 0.00510.0279 ± 0.00290.2436 ± 0.02100.0637 ± 0.00600.0329 ± 0.0034
    α = 1.30.1991 ± 0.01580.0542 ± 0.00480.0275 ± 0.00280.2338 ± 0.02020.0621 ± 0.00580.0324 ± 0.0033
    α = 1.50.2348 ± 0.02150.0639 ± 0.00630.0309 ± 0.00360.2764 ± 0.02650.0728 ± 0.00750.0362 ± 0.0042
    下载: 导出CSV
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  • 网络出版日期:  2026-08-05

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