Volume 12 Issue 6
Dec.  2019
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ZHU Xu-dan, ZHANG Rong-jun, ZHENG Yu-xiang, WANG Song-you, CHEN Liang-yao. Spectroscopic ellipsometry and its applications in the study of thin film materials[J]. Chinese Optics, 2019, 12(6): 1195-1234. doi: 10.3788/CO.20191206.1195
Citation: ZHU Xu-dan, ZHANG Rong-jun, ZHENG Yu-xiang, WANG Song-you, CHEN Liang-yao. Spectroscopic ellipsometry and its applications in the study of thin film materials[J]. Chinese Optics, 2019, 12(6): 1195-1234. doi: 10.3788/CO.20191206.1195

Spectroscopic ellipsometry and its applications in the study of thin film materials

doi: 10.3788/CO.20191206.1195
Funds:

National Natural Science Foundation of China 11674062

National Natural Science Foundation of China 61775042

National Natural Science Foundation of China 11174058

National Natural Science Foundation of China 61575048

National Natural Science Foundation of China 69425004

National Natural Science Foundation of China 69178007

National Natural Science Foundation of China 19174013

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  • Corresponding author: ZHANG Rong-jun, E-mail:rjzhang@fudan.edu.cn
  • Received Date: 04 Jul 2018
  • Rev Recd Date: 27 Jul 2018
  • Publish Date: 01 Dec 2019
  • Spectroscopic ellipsometry is used to measure the relative amplitude and phase change of linearly polarized light reflected by a material surface, so as to obtain the ellipsometric parameters. The optical properties of a material can be deduced by fitting these parameters. This technique is advantageous for being non-contact, highly sensitive, non-destructive, so it is widely used in physics, chemistry, materials science and microelectronics, etc, being an indispensable optical measurement method. This article first introduces the development history of the technology, and then presents the basic principle of the traditional ellipsometer. According to different measurement principles, ellipsometers can be divided into two types:extinction and photometric. The basic structure, measurement principle and related application of these two different types of ellipsometer are briefly clarified. After comparing these various ellipsometers, their advantages and disadvantages are introduced. At this point, a double Fourier transform infrared ellipsometry system developed by Fudan University is highlighted. Then, according to the basic steps of ellipsometric parameter manipulation, a measurement, modeling and fitting process is introduced. The equations of various optical dispersion models used for parameter fitting are introduced in detail and application examples are illustrated. Finally, the future development direction of spectroscopic ellipsometry is proposed.

     

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  • [1]
    美国国家研究理事会.驾驭光:21世纪光科学与工程学[M].上海:上海科学技术文献出版社, 2001.

    National Research Council. Harnessing Light:Optical Science and Engineering for the 21st Century[M]. Shanghai:Shanghai Scientific and Technical Literature Press, 2001.(in Chinese)
    [2]
    廖振兴, 杨芳, 夏文建.光学薄膜膜厚监控方法及其进展[J].激光杂志, 2004, 25(4):10-12. doi: 10.3969/j.issn.0253-2743.2004.04.004

    LIAO ZH X, YANG F, XIA W J. Optical film thickness monitoring methods and its progress[J]. Laser Journal, 2004, 25(4):10-12.(in Chinese) doi: 10.3969/j.issn.0253-2743.2004.04.004
    [3]
    唐晋发.现代光学薄膜技术[M].杭州:浙江大学出版社, 2006.

    TANG J F. Modern Optical Film Technology[M]. Hangzhou:Zhejiang University Press, 2006. (in Chinese)
    [4]
    TOMPKINS H G. Industrial applications of spectroscopic ellipsometry[J]. Thin Solid Films, 2004, 455-456:772-778. doi: 10.1016/j.tsf.2004.01.045
    [5]
    DRUDE P. Ueber die gesetze der reflexion und brechung des lichtes an der grenze absorbirender krystalle[J]. Annalen Der Physik, 1887, 268(12):584-625. doi: 10.1002/andp.18872681205
    [6]
    DRUDE P. Bestimmung der optischen constanten der metalle[J]. Annalen Der Physik, 2010, 275(4):481-554. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=10.1002/andp.18902750402
    [7]
    ASPNES D E. Expanding horizons:new developments in ellipsometry and polarimetry[J]. Thin Solid Films, 2004, 455-456:3-13. doi: 10.1016/j.tsf.2003.12.038
    [8]
    TRONSTAD L. The investigation of thin surface films on metals by means of reflected polarized light[J]. Transactions of the Faraday Society, 1933, 29(140):502-514. doi: 10.1039/tf9332900502
    [9]
    KENT C V, LAWSON J. A photoelectric method for the determination of the parameters of elliptically polarized light[J]. Journal of the Optical Society of America, 1937, 27(3):117-119. doi: 10.1364/JOSA.27.000117
    [10]
    ROTHEN A. The ellipsometer, an apparatus to measure thicknesses of thin surface films[J]. Review of Scientific Instruments, 1945, 16(2):26-30. doi: 10.1063/1.1770315
    [11]
    BUDDE W. Photoelectric analysis of polarized light[J]. Applied Optics, 1962, 1(3):201-205. doi: 10.1364/AO.1.000201
    [12]
    HAUGE P S, DILL F H. Design and operation of ETA, an automated ellipsometer[J]. IBM Journal of Research & Development, 1973, 17(6):472-489. doi: 10.1147-rd.176.0472/
    [13]
    HAUGE P S, DILL F H. A rotating-compensator fourier ellipsometer[J]. Optics Communications, 1975, 14(4):431-437. doi: 10.1016/0030-4018(75)90012-7
    [14]
    ASPNES D E, STUDNA A A. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV[J]. Physical Review B, 1983, 27(2):985-1009. doi: 10.1103/PhysRevB.27.985
    [15]
    JOHS B D, HE P, GREEN S E, et al.. Multiple order dispersive optics system and method of use: US, 5666201[P/OL].1997-09-09. http://digitalcommons.unl.edu/electricalengineeringfacpub/32.
    [16]
    THOMPSON R C, BOTTIGER J R, FRY E S. Measurement of polarized light interactions via the Mueller matrix[J]. Applied Optics, 1980, 19(8):1323-1332. doi: 10.1364/AO.19.001323
    [17]
    OSSIKOVSKI R, SHIRAI H, DRÉVILLON B. In situ investigation by IR ellipsometry of the growth and interfaces of amorphous silicon and related materials[J]. Thin Solid Films, 1993, 234(1-2):363-366. doi: 10.1016/0040-6090(93)90286-X
    [18]
    JELLISON G E, MODINE F A. Two-modulator generalized ellipsometry:experiment and calibration[J]. Applied Optics, 1997, 36(31):8184-8189. doi: 10.1364/AO.36.008184
    [19]
    ASPNES D E. Spectroscopic ellipsometry-past, present, and future[J]. Thin Solid Films, 2014, 571(9):334-344. http://cn.bing.com/academic/profile?id=95601ac11c563a08721adde0e0b30873&encoded=0&v=paper_preview&mkt=zh-cn
    [20]
    ASPNESD E, THEENTENJ B, HOTTIERF. Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry[J]. Physical Review B, 1979, 20(8):3292-3302. doi: 10.1103/PhysRevB.20.3292
    [21]
    AZZAM R M A.Photopolarimetric measurement of the Mueller matrix by Fourier analysis of a single detected signal[J]. Optics Letters, 1978, 2(6):148-150. doi: 10.1364/OL.2.000148
    [22]
    AZZAM R M A, GIARDINA K A, LOPEZ A G. Conventional and generalized Mueller-matrix ellipsometry using the four-detector photopolarimeter[J]. Optical Engineering, 1991, 30(10):1583. doi: 10.1117/12.55957
    [23]
    肖国辉.多波长消光式椭偏测量技术研究[D].广州: 华南师范大学, 2009.

    XIAO G H. Study of measurement technology for multi-wavelength null ellipsometry[D]. Guangzhou: South China Normal University, 2009.(in Chinese)
    [24]
    高龙.高精度椭圆偏振技术在盘垫片检测中的应用[D].哈尔滨: 哈尔滨工业大学, 2007.

    GAO L. Application of high-accuracy ellipsometry to measure magnetic disc[D]. Harbin: Harbin Institute of Technology, 2007.(in Chinese)
    [25]
    罗晋生, 陈敏麒, 朱惠贤, 等.激光自动椭偏仪及其应用[J].西安交通大学学报, 1987, 21(3):61-68. http://www.cnki.com.cn/Article/CJFDTotal-XAJT198703006.htm

    LUO J SH, CHEN M Q, ZHU H X, et al.. Design of an automated laser ellipsometer and its applications[J]. Journal of Xi'an Jiaotong University, 1987, 21(3):61-68.(in Chinese) http://www.cnki.com.cn/Article/CJFDTotal-XAJT198703006.htm
    [26]
    朱慧贤, 罗晋生.0.5~2.0 eV红外光生自动椭偏仪的研制与应用[J].西安交通大学学报, 1993, 27(3):69-74. http://www.cnki.com.cn/Article/CJFDTotal-XAJT199303011.htm

    ZHU H X, LUO J SH. The design and application of 0.5~2.0 eV automatic infrared spectroscopic ellipsometer[J]. Journal of Xi'an Jiaotong University, 1993, 27(3):69-74.(in Chinese) http://www.cnki.com.cn/Article/CJFDTotal-XAJT199303011.htm
    [27]
    CHEN L Y, FENG X W, SU Y, et al.. Design of a scanning ellipsometer by synchronous rotation of the polarizer and analyzer[J]. Applied Optics, 1994, 33(7):1299-1305. doi: 10.1364/AO.33.001299
    [28]
    黄志明, 金世荣, 陈诗伟, 等.同时旋转起偏器和检偏器的红外椭圆偏振光谱仪研制[J].红外与毫米波学报, 1998, 17(5):321-326. doi: 10.3321/j.issn:1001-9014.1998.05.001

    HUANG ZH M, JIN SH R, CHEN SH W, et al.. Development of infrared spectroscopic ellipsometer by synchronous rotation of the polarizer and analyzer[J]. Journal of Infrared and Millimeter Waves, 1998, 17(5):321-326.(in Chinese) doi: 10.3321/j.issn:1001-9014.1998.05.001
    [29]
    孟永宏, 靳刚.椭偏光学显微成像系统中的图像采集及处理技术[J].光学 精密工程, 2000, 8(4):316-320. doi: 10.3321/j.issn:1004-924X.2000.04.003

    MENG Y H, JIN G. Technique of image grabbing and processing in ellipsometric image system[J]. Opt. Precision Eng., 2000, 8(4):316-320.(in Chinese) doi: 10.3321/j.issn:1004-924X.2000.04.003
    [30]
    XIA G Q, ZHANG R J, CHEN Y L, et al.. New design of the variable angle infrared spectroscopic ellipsometer using double Fourier transforms[J]. Review of Scientific Instruments, 2000, 71(7):2677-2683. doi: 10.1063/1.1150674
    [31]
    CHEN X G, ZHANG CH W, LIU SH Y, et al.. Accurate characterization of nanoimprinted resist patterns using Mueller matrix ellipsometry[J]. Optics Express, 2014, 22(12):15165-15177. doi: 10.1364/OE.22.015165
    [32]
    CHEN X G, ZHANG CH W, LIU SH Y, et al.. Mueller matrix ellipsometric detection of profile asymmetry in nanoimprinted grating structures[J]. Journal of Applied Physics, 2014, 116(19):194305. doi: 10.1063/1.4902154
    [33]
    李伟奇.高精度宽光谱穆勒矩阵椭偏仪研制与应用研究[D].武汉: 华中科技大学, 2016.

    LI W Q. Research on development and application of a high-precision broadband muller natrix ellipsometer[D]. Wuhan: Huazhong University of Science and Technology, 2016.(in Chinese)
    [34]
    FUJIWARA H. Spectroscopic Ellipsometry:Principles and Applications[M]. West Sussex:England John Wiley & Sons, 2007.
    [35]
    LOSURDO M, HINGERL K. Ellipsometry at the Nanoscale[M]. Berlin Heidelberg:Springer-Verlag, 2013.
    [36]
    HINRICHS K, EICHHORN K J. Ellipsometry of Functional Organic Surfaces and Films[M]. Berlin Heidelberg:Springer-Verlag, 2014:52.
    [37]
    杨坤, 王向朝, 步扬.椭偏仪的研究进展[J].激光与光电子学进展, 2007, 44(3):43-49. http://d.old.wanfangdata.com.cn/Periodical/jgygdzxjz200703007

    YANG K, WANG X CH, BU Y. Research progress of ellipsometry[J]. Laser & Optoelectronics Progress, 2007, 44(3):43-49.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/jgygdzxjz200703007
    [38]
    吴仕梁.透明光电材料的椭偏研究[D].济南: 山东大学, 2012.

    WU SH L. Ellipsometry of transparent optoelectronic materials[D]. Jinan: Shandong University, 2012.(in Chinese)
    [39]
    KALIMANOVA I, ILIEVA N, GEORGIEVA M. Ellipsometry and thin films parameters measurement[C]. 28th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005: 472-475.
    [40]
    TOMPKINS H G, IRENE E A. Handbook of Ellipsometry[M]. Co-published by:Norwich, Heidelberg, Germany:Springer-Verlag GmbH & Co. KG, 2005.
    [41]
    ASPNES D E. Precision bounds to ellipsometer systems[J]. Applied Optics, 1975, 14(5):1131-1136. doi: 10.1364/AO.14.001131
    [42]
    ASPNES D E, HAUGE P S. Rotating-compensator/analyzer fixed-analyzer ellipsometer:analysis and comparison to other automatic ellipsometers[J]. Journal of the Optical Society of America, 1976, 66(9):949-954. doi: 10.1364/JOSA.66.000949
    [43]
    CHEN L Y, LYNCH D W. Scanning ellipsometer by rotating polarizer and analyzer[J]. Applied Optics, 1987, 26(24):5221-5228. doi: 10.1364/AO.26.005221
    [44]
    EL-AGEZ T M, ELTAYYAN A A E, TAYA S A. Rotating polarizer-analyzer scanning ellipsometer[J]. Thin Solid Films, 2010, 518(19):5610-5614. doi: 10.1016/j.tsf.2010.04.067
    [45]
    MAO P H, ZHENG Y X, CHEN Y R, et al.. Study of the new ellipsometric measurement method using integrated analyzer in parallel mode[J]. Optics Express, 2009, 17(10):8641-8650. doi: 10.1364/OE.17.008641
    [46]
    CHEN L Y, FENG X W, SU Y, et al.. Improved rotating analyzer-polarizer type of scanning ellipsometer[J]. Thin Solid Film, 1993, 234(1-2):385-389 doi: 10.1016/0040-6090(93)90291-V
    [47]
    HAUGE P S. Mueller matrix ellipsometry with imperfect compensators[J]. Journal of the Optical Society of America, 1978, 68(11):1519-1528. doi: 10.1364/JOSA.68.001519
    [48]
    GEHRELS T. Planets, Stars and Nebulae Studied with Photopolarimetry[M]. Tucson, Arizon:University of Arizona Press, 1974.
    [49]
    陈岳立, 张荣君, 夏国强, 等.双重傅里叶变换红外椭偏光谱系统的研制[J].光学学报, 2001, 21(6):729-733. doi: 10.3321/j.issn:0253-2239.2001.06.021

    CHEN Y L, ZHANG R J, XIA G Q, et al.. Design of an infrared spectroscopic ellipsometer using double-fourier-transform method[J]. Acta Optica Sinica, 2001, 21(6):729-733.(in Chinese) doi: 10.3321/j.issn:0253-2239.2001.06.021
    [50]
    冯守志.尺寸可控的硅纳米晶及硅纳米晶与二氧化硅复合薄膜的椭圆偏振光谱研究[D].上海: 复旦大学, 2007.

    FENG SH ZH. Spectroscopic ellipsoscopic study of size-controlled silicon nano-crystals and silicon nano-crystals: SiO2 composite thin film[D]. Shanghai: Fudan University, 2007.(in Chinese)
    [51]
    JASPERSON S N, SCHNATTERLY S E. An improved method for high reflectivity ellipsometry based on a new polarization modulation technique[J]. Review of Scientific Instruments, 1969, 40(6):761-767. doi: 10.1063/1.1684062
    [52]
    ADACHI S. Optical Constants of Crystalline and Amorphous Semiconductors:Numerical Data and Graphical Information[M]. Boston, MA:Springer, 1999.
    [53]
    LEE J, COLLINS R W, HEYD A R, et al.. Spectroellipsometry for characterization of Zn1-xCdxSe multilayered structures on GaAs[J]. Applied Physics Letters, 1996, 69(15):2273-2275. doi: 10.1063/1.117531
    [54]
    SERAPHIN B O. Optical Properties of Solids:New Developments[M]. American:Elsevier, 1976.
    [55]
    ERMAN M, THEETEN J B, CHAMBON P, et al.. Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation[J]. Journal of Applied Physics, 1984, 56(10):2664-2671. doi: 10.1063/1.333785
    [56]
    ASPNES D E, STUDNA A A. High precision scanning ellipsometer[J]. Applied Optics, 1975, 14(1):220-228. doi: 10.1364/AO.14.000220
    [57]
    BEAGLEHOLE D. Performance of a microscopic imaging ellipsometer[J]. Review of Scientific Instruments, 1988, 59(12):2557-2559. doi: 10.1063/1.1139897
    [58]
    游海洋, 贾建虎, 陈剑科, 等.面阵CCD探测的全自动椭圆偏振光谱系统研究[J].红外与毫米波学报, 2003, 22(1):45-50. doi: 10.3321/j.issn:1001-9014.2003.01.010

    YOU H Y, JIA J H, CHEN J K, et al.. The study of a auto ellipsometer system by using a two-dimensional CCD array detector[J]. Journal of Infrared and Millimeter Waves, 2003, 22(1):45-50.(in Chinese) doi: 10.3321/j.issn:1001-9014.2003.01.010
    [59]
    JIN G, JANSSON R, ARWIN H. Imaging ellipsometry revisited:developments for visualization of thin transparent layers on silicon substrates[J]. Review of Scientific Instruments, 1996, 67(8):2930-2936. doi: 10.1063/1.1147074
    [60]
    SCHUBERT M, RHEINLÄNDER B, WOOLLAM J A, et al.. Extension of rotating-analyzer ellipsometry to generalized ellipsometry:determination of the dielectric function tensor from uniaxial TiO2[J]. Journal of the Optical Society of America A, 1996, 13(4):875-883. doi: 10.1364/JOSAA.13.000875
    [61]
    CHEN CH, AN I, FERREIRA G M, et al.. Multichannel Mueller matrix ellipsometer based on the dual rotating compensator principle[J]. Thin Solid Films, 2004, 455-456(1):14-23. http://cn.bing.com/academic/profile?id=e1af353b3c3e7277079f693c13c7a4db&encoded=0&v=paper_preview&mkt=zh-cn
    [62]
    JELLISON G E, MODINE F A. Two-modulator generalized ellipsometry:theory[J]. Applied Optics, 1997, 36(31):8190-8198. doi: 10.1364/AO.36.008190
    [63]
    JELLISON G E, HUNN J D, ROULEAU C M. Normal-incidence generalized ellipsometry using the two-modulator generalized ellipsometry microscope[J]. Applied Optics, 2006, 45(22):5479-5488. doi: 10.1364/AO.45.005479
    [64]
    JELLISON JR G E, HOLCOMB D E, HUNN J D, et al.. Generalized ellipsometry in unusual configurations[J]. Applied Surface Science, 2006, 253(1):47-51. doi: 10.1016/j.apsusc.2006.05.120
    [65]
    张冬旭.几种信息功能薄膜材料的椭圆偏振光谱研究[D].上海: 复旦大学, 2014.

    ZHANG D X. Optical properties of several kinds of information films studied by spectroscopic ellipsometry[D]. Shanghai: Fudan University, 2014.(in Chinese)
    [66]
    KRAVETS V G, GRIGORENKO A N, NAIR R R, et al.. Spectroscopic ellipsometry of graphene and an exciton-shifted van Hove peak in absorption[J]. Physical Review B, 2010, 81(15):155413. doi: 10.1103/PhysRevB.81.155413
    [67]
    SCHULZ B, CHAN D, BÄCKSTRÖM J, et al.. Spectroscopic ellipsometry on biological materials-investigation of hydration dynamics and structural properties[J]. Thin Solid Films, 2004, 455-456(1):731-734. http://cn.bing.com/academic/profile?id=0f94bd0b2cda683fc127e3bdf5312492&encoded=0&v=paper_preview&mkt=zh-cn
    [68]
    WOOLLAM J A. Ellipsometry solutions: Ellipsometry data analysis[EB/OL]. https://www.jawoollam.com/resources/ellipsometry-tutorial/ellipsometry-data-analysis.
    [69]
    HILFIKER J N, SINGH N, TIWALD T, et al.. Survey of methods to characterize thin absorbing films with spectroscopic ellipsometry[J]. Thin Solid Films, 2008, 516(22):7979-7989. doi: 10.1016/j.tsf.2008.04.060
    [70]
    BASU S R, MARTIN L W, CHU Y H, et al.. Photoconductivity in BiFeO3 thin films[J]. Applied Physics Letters, 2008, 92(9):091905. doi: 10.1063/1.2887908
    [71]
    PRICE J, BERSUKER G, LYSAGHT P S. Identification of electrically active defects in thin dielectric films by spectroscopic ellipsometry[J]. Journal of Applied Physics, 2012, 111(4):043507-1-043507-6. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=5a139f74f40a5fb2ca82ec84b0c3f80b
    [72]
    XU J P, ZHANG R J, ZHANG Y, et al. The thickness-dependent band gap and defect features of ultrathin ZrO2 films studied by spectroscopic ellipsometry[J]. Physical Chemistry Chemical Physics PCCP, 2016, 18(4):3316-3321. doi: 10.1039/C5CP05592J
    [73]
    LI D H, ZHENG H, WANG Z Y, et al.. Dielectric functions and critical points of crystalline WS2 ultrathin films with tunable thickness[J]. Physical Chemistry Chemical Physics, 2017, 19(19):12022-12031. doi: 10.1039/C7CP00660H
    [74]
    DRUDE P. Zur elektronentheorie der metalle; Ⅱ.Teil. Galvanomagnetische und thermomagnetische effecte[J]. Annalen Der Physik, 1900, 308(11):369-402. doi: 10.1002/andp.19003081102
    [75]
    LORENTZ H A. The Theory of Electrons and Its Applications to the Phenomena of Light and Radiant Heat[M]. New York:G.E. Stechert & Co. 1909.
    [76]
    JELLISON JR G E, MODINE F A. Parameterization of the optical functions of amorphous materials in the interband region[J]. Applied Physics Letters, 1996, 69(3):371-373. doi: 10.1063/1.118064
    [77]
    PRICE J, HUNG P Y, RHOAD T, et al.. Spectroscopic ellipsometry characterization of HfxSiyOz films using the Cody-Lorentz parameterized model[J]. Applied Physics Letters, 2004, 85(10):1701-1703. doi: 10.1063/1.1784889
    [78]
    ZHAO D D, CAI Q Y, ZHENG Y X, et al.. Optical constants of e-beam evaporated and annealed Nb2O5 thin films with varying thickness[J]. Journal of Physics D:Applied Physics, 2016, 49(26):265304. doi: 10.1088/0022-3727/49/26/265304
    [79]
    ESRO M, VOURLIAS G, SOMERTON C, et al.. High-mobility ZnO thin film transistors based on solution-processed hafnium oxide gate dielectrics[J]. Advanced Functional Materials, 2015, 25:134-141. doi: 10.1002/adfm.201402684
    [80]
    JANSSON R, ZANGOOIE S, ARWIN H, et al.. Characterization of 3C-SiC by spectroscopic ellipsometry[J]. Physica Status Solidi B, 2015, 218(1):r1-r2. doi: 10.1002/(SICI)1521-3951(200003)218:13.0.CO;2-0
    [81]
    ZHANG D X, ZHENG Y X, CAI Q Y, et al.. Thickness-dependence of optical constants for Ta2O5, ultrathin films[J]. Applied Physics A, 2012, 108(4):975-979. doi: 10.1007/s00339-012-7007-2
    [82]
    ZHANG D X, SHEN B, ZHENG Y X, et al.. Evolution of optical properties of thin film from solid to liquid studied by spectroscopic ellipsometry and ab initio calculation[J]. Applied Physics Letters, 2014, 104(12):121907. doi: 10.1063/1.4869722
    [83]
    STEIRER K X, NDIONE P F, WIDJONARKO N E, et al.. Enhanced efficiency in plastic solar cells via energy matched solution processed NiOx interlayers[J]. Advanced Energy Materials, 2011, 1(5):813-820. doi: 10.1002/aenm.201100234
    [84]
    GHOSH M, PRADIPKANTI L, RAI V, et al.. Confined water layers in graphene oxide probed with spectroscopic ellipsometry[J]. Applied Physics Letters, 2015, 106(24):241902. doi: 10.1063/1.4922731
    [85]
    YANG L, ZHENG Y X, YANG S D, et al.. Ellipsometric study on temperature dependent optical properties of topological bismuth film[J]. Applied Surface Science, 2017, 421(Part B):899-904. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=146271fb2df48be51bb1fea1888e98da
    [86]
    WANG Z Y, ZHANG R J, LU H L, et al.. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition[J]. Nanoscale Research Letters, 2015, 10(1):46. doi: 10.1186/s11671-015-0757-y
    [87]
    李彤, 张美玲, 王菲, 等.键合型掺铒纳米晶-聚合物波导放大器的制备[J].中国光学, 2017, 10(2):219-225. http://www.chineseoptics.net.cn/CN/abstract/abstract9492.shtml

    LI T, ZHANG M L, WANG F, et al.. Fabrication of optical waveguide amplifiers based on bonding-type NaYF4:Er nanoparticles-polymer[J]. Chinese Optics, 2017, 10(2):219-225.(in Chinese) http://www.chineseoptics.net.cn/CN/abstract/abstract9492.shtml
    [88]
    JIANG J H, ZHU L P, ZHU L J, et al.. Surface characteristics of a self-polymerized dopamine coating deposited on hydrophobic polymer films[J]. Langmuir the Acs Journal of Surfaces & Colloids, 2011, 27(23):14180-14187. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=7462435ef105d8d9bec71072717e919e
    [89]
    FOROUHI A R, BLOOMER I. Optical dispersion relations for amorphous semiconductors and amorphous dielectrics[J]. Physical Review B Condensed Matter, 1986, 34(10):7018-7026. doi: 10.1103/PhysRevB.34.7018
    [90]
    FOROUHI A R, BLOOMER I. Optical properties of crystalline semiconductors and dielectrics[J]. Physical Review B, 1988, 38(3):1865-1874. doi: 10.1103/PhysRevB.38.1865
    [91]
    ZHENG H, ZHANG R J, XU J P, et al.. Thickness-dependent optical constants and annealed phase transitions of ultrathin ZnO films[J]. Journal of Physical Chemistry C, 2016, 120(39):22532-22538. doi: 10.1021/acs.jpcc.6b06173
    [92]
    CHRYSICOPOULOU P, DAVAZOGLOU D, TRAPALIS C, et al.. Optical properties of very thin(< 100 nm) sol-gel TiO2 films[J]. Thin Solid Films, 1998, 323(1-2):188-193. doi: 10.1016/S0040-6090(97)01018-3
    [93]
    HEITMANN J, MVLLER F, YI L X, et al.. Excitons in Si nanocrystals:confinement and migration effects[J]. Physical Review B, 2004, 69(19):195309. doi: 10.1103/PhysRevB.69.195309
    [94]
    ZACHARIAS M, HILLER D, HARTEL A, et al.. Defect engineering of Si nanocrystal interfaces[J]. Physica Status Solidi A, 2012, 209(12):2449-2454. doi: 10.1002/pssa.201200734
    [95]
    SHI Y J, ZHANG R J, ZHENG H, et al.. Optical constants and band gap evolution with phase transition in sub-20-nm-thick TiO2 films prepared by ALD[J]. Nanoscale Research Letters, 2017, 12(1):243. doi: 10.1186/s11671-017-2011-2
    [96]
    LI D H, ZHAI C H, ZHOU W C, et al.. Effects of bilayer thickness on the morphological, optical, and electrical properties of Al2O3/ZnO nanolaminates[J]. Nanoscale Research Letters, 2017, 12(1):563. doi: 10.1186/s11671-017-2328-x
    [97]
    LOU Y Y, WANG L J, MA H L, et al.. Ellipsometric study of CVD diamond films prepared with various grain sizes[J]. Proceedings of SPIE, 2008, 6984:698419. doi: 10.1117/12.792395
    [98]
    LÖPER P, STUCKELBERGER M, NIESEN B, et al.. Complex refractive index spectra of CH3NH3PbI3 perovskite thin films determined by spectroscopic ellipsometry and spectrophotometry[J]. Journal of Physical Chemistry Letters, 2015, 6(1):66-71. doi: 10.1021/jz502471h
    [99]
    XIE Z A, LIU SH F, QIN L X, et al.. Refractive index and extinction coefficient of CH3NH3PbI3 studied by spectroscopic ellipsometry[J]. Optical Materials Express, 2015, 5(1):29-43. doi: 10.1364/OME.5.000029
    [100]
    TAUC J, GRIGOROVICI R, VANCU A. Optical properties and electronic structure of amorphous germanium[J]. Physica Status Solidi, 1966, 15(2):627-637. doi: 10.1002/pssb.19660150224
    [101]
    WANG Z Y, YUAN S J, LI D H, et al.. Influence of hydration water on CH3NH3PbI3 perovskite films prepared through one-step procedure[J]. Optics Express, 2016, 24(22):A1431-A1443. doi: 10.1364/OE.24.0A1431
    [102]
    SHIRAYAMA M, KADOWAKI H, MIYADERA T, et al.. Optical transitions in hybrid perovskite solar cells:ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3[J]. Physical Review Applied, 2016, 5(1):014012. doi: 10.1103/PhysRevApplied.5.014012
    [103]
    IHLEFELD J F, PODRAZA N J, LIU Z K, et al.. Optical band gap of BiFeO3 grown by molecular-beam epitaxy[J]. Applied Physics Letters, 2008, 92(14):142908. doi: 10.1063/1.2901160
    [104]
    CHAIBI F, JEMAI R, AGUAS H, et al.. The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition[J]. Journal of Materials Science, 2018, 53(5):3672-3681. doi: 10.1007/s10853-017-1791-1
    [105]
    ORDAL M A, LONG L L, BELL R J, et al.. Optical properties of the metals Al, Co, Cu, Au, Fe, Pb, Ni, Pd, Pt, Ag, Ti, and W in the infrared and far infrared[J]. Applied Optics, 1983, 22(7):1099-1119. doi: 10.1364/AO.22.001099
    [106]
    HU E T, CAI Q Y, ZHANG R J, et al.. Effective method to study the thickness-dependent dielectric functions of nanometal thin film[J]. Optics Letters, 2016, 41(21):4907-4910. doi: 10.1364/OL.41.004907
    [107]
    ETCHEGOIN P G, LERU E C, MEYER M. An analytic model for the optical properties of gold[J]. Journal of Chemical Physics, 2006, 125(16):164705. doi: 10.1063/1.2360270
    [108]
    BRUGGEMAN D A G. Calculation of various physics constants in heterogenous substances I.dielectricity constants and conductivity of mixed bodies from isotropic substances[J]. Annalen der Physik, 1935, 27(7):636-664..
    [109]
    THEETEN J B, ASPNES D E. The determination of interface layers by spectroscopic ellipsometry[J]. Thin Solid Films, 1979, 60(2):183-192. doi: 10.1016/0040-6090(79)90188-3
    [110]
    YANG SH D, YANG L, ZHENG Y X, et al.. Structural-dependent optical properties of self-organized Bi2Se3 nanostructures:from nanocrystals to nanoflakes[J]. ACS Applied Materials & Interfaces, 2017, 9(34):29295-29301. doi: 10.1021/acsami.7b08834
    [111]
    ZHANG R J, CHEN Y M, LU W J, et al.. Influence of nanocrystal size on dielectric functions of Si nanocrystals embedded in SiO2 matrix[J]. Applied Physics Letters, 2009, 95(16):161109. doi: 10.1063/1.3254183
    [112]
    XU J P, ZHANG R J, CHEN Z H, et al.. Optical properties of epitaxial BiFeO3 thin film grown on SrRuO3-buffered SrTiO3 substrate[J]. Nanoscale Research Letters, 2014, 9(1):188. doi: 10.1186/1556-276X-9-188
    [113]
    TAKEUCHI K, ADACHI S. Optical properties of β-Sn films[J]. Journal of Applied Physics, 2009, 105(7):073520. doi: 10.1063/1.3106528
    [114]
    LOSURDO M. Applications of ellipsometry in nanoscale science:needs, status, achievements and future challenges[J]. Thin Solid Films, 2011, 519(9):2575-2583. doi: 10.1016/j.tsf.2010.11.066
    [115]
    乔自文, 高炳荣, 陈岐岱, 等.飞秒超快光谱技术及其互补使用[J].中国光学, 2014, 7(4):588-599. http://www.chineseoptics.net.cn/CN/abstract/abstract9168.shtml

    QIAO Z W, GAO B R, CHEN Q D, ,et al.. Ultrafast spectroscopy technique and their complementary usages[J]. Chinese Optics, 2014, 7(4):588-599.(in Chinese) http://www.chineseoptics.net.cn/CN/abstract/abstract9168.shtml
    [116]
    潘新宇, 龚旗煌.超快光声光谱技术的进展和前景[J].物理, 2002, 31(10):647-650. doi: 10.3321/j.issn:0379-4148.2002.10.006

    PAN X Y, GONG Q H. Progress and prospects of ultrafast photoacoustic spectroscopy[J]. Physics, 2002, 31(10):647-650.(in Chinese) doi: 10.3321/j.issn:0379-4148.2002.10.006
    [117]
    CHE M, VÉDRINE J C. Characterization of Solid Materials and Heterogeneous Catalysts:From Structure to Surface Reactivity[M]. Weinheim, Germany:Wiley-VCH Verlag GmbH & Co. KGaA, 2012.
    [118]
    牛晓龙, 乔松, 张莉沫, 等.利用光致发光技术研究多晶硅片厚度对太阳电池性能的影响[J].光电子技术, 2016, 36(1):55-58. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=gdzjs201601011

    NIU X L, QIAO S, ZHANG L M, ,et al.. Application of photoluminescence for investigating the influence of wafer thickness on the performance of multicrystalline silicon solar cell[J]. Optoelectronic Technology, 2016, 36(1):55-58.(in Chinese) http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=gdzjs201601011
    [119]
    HOMAN S B, SANGWAN V K, BALLA I, et al.. Ultrafast exciton dissociation and long-lived charge separation in a photovoltaic pentacene-MoS2 van der waals heterojunction[J]. Nano Letters, 2017, 17(1):164-169. doi: 10.1021/acs.nanolett.6b03704
    [120]
    CEBALLOS F, BELLUS M Z, CHIU H Y, et al.. Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der waals heterostructure[J]. ACS Nano, 2014, 8(12):12717-12724. doi: 10.1021/nn505736z
    [121]
    HE J Q, KUMAR N, BELLUS M Z, et al.. Electron transfer and coupling in graphene-tungsten disulfide van der waals heterostructures[J]. Nature Communications, 2014, 5(1):5622. doi: 10.1038/ncomms6622
    [122]
    SARICIFTCI N S. Primary Photoexcitations in Conjugated Polymers:Molecular Exciton Versus Semiconductor Band Model[M].Singapore:World Scientific Publishing Co. Pte. Ltd, 1997.
    [123]
    MAO P H, ZHENG Y X, CAI Q Y, et al.. Approach to error analysis and reduction for rotating-polarizer-analyzer ellipsometer[J]. Journal of the Physical Society of Japan, 2012, 81(12):124003. doi: 10.1143/JPSJ.81.124003
    [124]
    DEFRANOUX C, EMERAUD T, BOURTAULT S, et al.. Infrared spectroscopic ellipsometry applied to the characterization of ultra shallow junction on silicon and SOI[J]. Thin Solid Films, 2004, 455-456:150-156. doi: 10.1016/j.tsf.2004.02.008
    [125]
    COBET C, WILMERS K, WETHKAMP T, et al.. Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV[J]. Thin Soild Films, 2000, 364(1-2):111-113.. doi: 10.1016/S0040-6090(99)00893-7
    [126]
    王珣, 金春水, 匡尚奇, 等.极紫外光学器件辐照污染检测技术[J].中国光学2014, 7(1):79-88. http://www.chineseoptics.net.cn/CN/abstract/abstract9099.shtml

    WANG X, JIN CH SH, KUANG SH Q, et al.. Techniques of radiation contamination monitoring for extreme ultraviolet devices[J]. Chinese Optics, 2014, 7(1):79-88.(in Chinese) http://www.chineseoptics.net.cn/CN/abstract/abstract9099.shtml
    [127]
    HLINKA J, OSTAPCHUK T, NUZHNYY D, et al.. Coexistence of the phonon and relaxation soft modes in the terahertz dielectric response of tetragonal BaTiO3[J]. Physical Review Letters, 2008, 101(16):167402. doi: 10.1103/PhysRevLett.101.167402
    [128]
    HE Y ZH, UNG B S Y, PARROTT E P J, et al.. Freeze-thaw hysteresis effects in terahertz imaging of biomedical tissues[J]. Biomedical Optics Express, 2016, 7(11):4711-4717. doi: 10.1364/BOE.7.004711
    [129]
    CHEON H, YANG H J, LEE S H, et al.. Terahertz molecular resonance of cancer DNA[J]. Scientific Reports, 2016, 6:37103. doi: 10.1038/srep37103
    [130]
    FAN SH T, UNG B S Y, PARROTT E P J, et al.. In vivo terahertz reflection imaging of human scars during and after the healing process[J]. Journal of Biophotonics, 2016, 10(9):1143-1151. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=10.1002/jbio.201600171
    [131]
    BAIERL S, HOHENLEUTNER M, KAMPFRATH T, et al.. Nonlinear spin control by terahertz-driven anisotropy fields[J]. Nature Photonics, 2016, 10(11):715-718. doi: 10.1038/nphoton.2016.181
    [132]
    MUKAI Y, HIRORI H, YAMAMOTO T, et al.. Antiferromagnetic resonance excitation by terahertz magnetic field resonantly enhanced with split ring resonator[J]. Applied Physics Letters, 2014, 105(2):022410. doi: 10.1063/1.4890475
    [133]
    SOTOME M, KIDA N, HORIUCHI S, et al.. Visualization of ferroelectric domains in a hydrogen-bonded molecular crystal using emission of terahertz radiation[J]. Applied Physics Letters, 2014, 105(4):041101. doi: 10.1063/1.4890939
    [134]
    HOFMANN T, HERZINGER C M, BOOSALIS A, et al.. Variable-wavelength frequency-domain terahertz ellipsometry[J]. Review of Scientific Instruments, 2010, 81(2):023101. doi: 10.1063/1.3297902
    [135]
    CHEN X Q, PARROTT E P J, HUANG ZH, et al.. Robust and accurate terahertz time-domain spectroscopic ellipsometry[J]. Photonics Research, 2018, 6(8):768-775. doi: 10.1364/PRJ.6.000768
    [136]
    KÜHNE P, ARMAKAVICIUS N, STANISHEV V, et al.. Advanced terahertz frequency-domain ellipsometry instrumentation for in situ and ex situ applications[J]. IEEE Transactions on Terahertz Science & Technology, 2018, 8(3):257-270. http://cn.bing.com/academic/profile?id=33f6768770d990413e2fac26c732bec7&encoded=0&v=paper_preview&mkt=zh-cn
    [137]
    VAUPEL M, EING A GREULICH K O, et al.. Microarray Technology and Its Applications:Marker-free Detection on Microarrays[M]. Gemany:Springer, 2004.
    [138]
    POKSINSKI M, ARWIN H. Protein monolayers monitored by internal reflection ellipsometry[J]. Thin Solid Films, 2004, 455-456:716-721. doi: 10.1016/j.tsf.2004.01.037
    [139]
    KARLSSON L M, SCHUBERT M, ASHKENOV N, ,et al.. Protein adsorption in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry[J]. Thin Solid Films, 2004, 455-456:726-730. doi: 10.1016/j.tsf.2004.01.062
    [140]
    GARCIA-CAUREL E, NGUYEN J, SCHWARTZ L, et al.. Application of FTIR ellipsometry to detect and classify microorganisms[J]. Thin Solid Films, 2004, 455-456:722-725. doi: 10.1016/j.tsf.2004.02.005
    [141]
    LIN C H, CHEN H L, CHAO W CH, et al.. Optical characterization of two-dimensional photonic crystals based on spectroscopic ellipsometry with rigorous coupled-wave analysis[J]. Microelectronic Engineering, 2006, 83(4-9):1798-1804. doi: 10.1016/j.mee.2006.01.135
    [142]
    PÁPA Z, CSONTOS J, SMAUSZ T, et al.. Spectroscopic ellipsometric investigation of graphene and thin carbon films from the point of view of depolarization effects[J]. Applied Surface Science, 2017, 421(B):714-721. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=53a7bcfacd84c4d6ef23b235ca069fad
    [143]
    AL-HAZMI F S, BEALL G W, AL-GHAMDI A A, et al.. Raman and ellipsometry spectroscopic analysis of graphene films grown directly on Si substrate via CVD technique for estimating the graphene atomic planes number[J]. Journal of Molecular Structure, 2016, 1118:275-278. doi: 10.1016/j.molstruc.2016.04.028
    [144]
    刘洪兴, 张巍, 巩岩.光栅参数测量技术研究进展[J].中国光学, 2011, 4(2):103-110. doi: 10.3969/j.issn.2095-1531.2011.02.002

    LIU H X, ZHANG W, GONG Y. Research progress on grating parameter measurement technology[J]. Chinese Optics, 2011, 4(2):103-110.(in Chinese) doi: 10.3969/j.issn.2095-1531.2011.02.002
    [145]
    BANON J P, NESSE T, KILDEMO M, et al.. Critical dimension metrology of a plasmonic photonic crystal based on Muller matrix ellipsometry and the reduced Rayleigh equation[J]. Optics Letters, 2017, 42(13):2631-2634. doi: 10.1364/OL.42.002631
    [146]
    陈修国, 袁奎, 杜卫超, 等.基于Mueller矩阵成像椭偏仪的纳米结构几何参数大面积测量[J].物理学报, 2016, 65(7):070703. http://d.old.wanfangdata.com.cn/Periodical/wlxb201607008

    CHEN X G, YUAN K, DU W CH, et al.. Large-scale nanostructure metrology using Muellermatrix imaging ellipsometry[J]. Acta Physica Sinica, 2016, 65(7):070703.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/wlxb201607008
    [147]
    宋平.磁光椭偏仪的研究[D].济南: 山东大学, 2011.

    SONG P. Study of magneto-optical Ellipsometry[D]. Jinan: Shandong University, 2011.(in Chinese)
    [148]
    王晓.纳米尺度磁性薄膜材料的磁光特性研究[D].济南: 山东大学, 2014.

    WANG X. Characterization of magneto-optical properties of nano-scale magnetic thin film[D]. Jinan: Shandong University, 2014.(in Chinese)
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