Volume 16 Issue 5
Sep.  2023
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YANG Ya-xian, ZHANG Guo-qing. Relationship between the preparation process of the graphene/silicon hetero-junction photodetector and its voltage-current characteristics[J]. Chinese Optics, 2023, 16(5): 1149-1156. doi: 10.37188/CO.2022-0259
Citation: YANG Ya-xian, ZHANG Guo-qing. Relationship between the preparation process of the graphene/silicon hetero-junction photodetector and its voltage-current characteristics[J]. Chinese Optics, 2023, 16(5): 1149-1156. doi: 10.37188/CO.2022-0259

Relationship between the preparation process of the graphene/silicon hetero-junction photodetector and its voltage-current characteristics

doi: 10.37188/CO.2022-0259
Funds:  Supported by National Natural Science Foundation of China (No. 11975176); Natural Science Foundation of Shaanxi Province (No. 2022JQ-660); Basic Research Fund of Shaanxi Provincial Key Laboratory of Artificial Structural Functional Materials and Devices (No. AFMD-KFJJ-21207)
More Information
  • Corresponding author: zhangg_356@163.com
  • Received Date: 30 Dec 2022
  • Rev Recd Date: 05 Feb 2023
  • Accepted Date: 21 Mar 2023
  • Available Online: 04 Apr 2023
  • Wet transferring two-dimension (2D) material to a semiconductor substrate is a common method to prepare a hetero-junction photodetector. When preparing to wet transfer a hetero-junction, different preparation details have significant effects on the properties of the hetero-junction formed by the 2D materials and semiconductors. In this paper, a series of identical Gr/Si hetero-junction devices were prepared by the wet transfer method and the relationship between its preparation technique and the voltage-current characteristics was studied in detail. The experimental results show that the gradient drying process can significantly reduce the dark current of the Gr/Si hetero-junction photodetector, the optimal drying temperature peak is 170 °C, and the leakage current basically no longer changes above 170 °C. The surface impurities and residual water in the inter-layer of Gr/Si van der Waals hetero-junction has a significant effect on the leakage current of the hetero-junction. The selective etching and annealing process of a Gr/Si van der Waals hetero-junction can also greatly reduce the leakage current. Therefore, a suitable drying process, selective etching process and annealing process are each necessary in the preparation of a Gr/Si hetero-junction photodetector. These results can give reference to the fabrication of two-dimensional material hetero-junction devices by the wet transfer method.

     

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