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新型电光材料调制性能研究进展

吕潇磊 赵继广 杜小平 宋一铄 张朋 张建伟

吕潇磊, 赵继广, 杜小平, 宋一铄, 张朋, 张建伟. 新型电光材料调制性能研究进展[J]. 中国光学. doi: 10.37188/CO.2020-0039
引用本文: 吕潇磊, 赵继广, 杜小平, 宋一铄, 张朋, 张建伟. 新型电光材料调制性能研究进展[J]. 中国光学. doi: 10.37188/CO.2020-0039
LV Xiao-lei, ZHAO Ji-guang, DU Xiao-ping, SONG Yi-shuo, ZHANG Peng, ZHANG Jian-wei. Research progress on the modulation properties of new electro-optic materials[J]. Chinese Optics. doi: 10.37188/CO.2020-0039
Citation: LV Xiao-lei, ZHAO Ji-guang, DU Xiao-ping, SONG Yi-shuo, ZHANG Peng, ZHANG Jian-wei. Research progress on the modulation properties of new electro-optic materials[J]. Chinese Optics. doi: 10.37188/CO.2020-0039

新型电光材料调制性能研究进展

doi: 10.37188/CO.2020-0039
基金项目: 国家自然科学基金项目(No. 61805284)
详细信息
    作者简介:

    吕潇磊(1992—),男,山东威海人,博士研究生,主要从事目标光学探测、航天任务分析与设计方面的研究。E-mail:Ray_lxl@163.com

    赵继广(1967—),男,山东五莲县人,博士,教授,博士生导师,于国防科技大学获学士硕士学位,于装甲兵工程学院获博士学位,主要从事目标光学探测、航天任务分析与设计等方面研究。E-mail:zhaoyy8600@163.com

  • 中图分类号: TN384

Research progress on the modulation properties of new electro-optic materials

Funds: Supported by National Natural Science Foundation of China (No.61805284)
  • 摘要: 基于电光晶体的偏振调制技术在激光三维成像领域扮演着越来越重要的作用。受制于LN材料的低视场和高半波电压,传统电光调制技术难以进一步提升三维成像性能。随着钙钛矿结构电光材料的制备工艺日趋成熟,基于新型材料的电光调制技术将成为突破激光三维成像探测精度的绝佳手段,PMNT、PLZT和KTN三种典型材料优良的电光性能和介电性质能够突破视场和半波电压的限制,但应用到电光调制领域又衍生出PMNT调制带宽较低、PLZT透过性能较差、KTN实际应用带宽较低等难题。未来的研究将着眼于该调制技术走向实用,一方面通过掺杂改性等手段提升电光调制性能,另一方面通过建立性能表征模型优化系统的信噪比。
  • 图  1  偏振调制激光三维成像技术的原理图

    Figure  1.  Schematic diagram of polarization modulation laser 3d imaging technology

    图  2  晶体视场测量结果图

    Figure  2.  The viewing field measurement results of the crystals

    图  3  Bridgman方法生长的PMNT单晶[25]

    Figure  3.  PMNT single crystal grown with the Bridgman method

    图  4  锆钛酸镧铅(PLZT)光电陶瓷材料[36]

    Figure  4.  PLZT optoelectronic ceramic material

    图  5  钽铌酸钾(KTa1-xNbxO3, KTN)晶体材料[50]

    Figure  5.  KTN crystal material

    图  6  一种偏振无关的电光调制器

    Figure  6.  A polarization-independent electro-optic modulator

    图  7  不同Al掺杂量的PLZT材料透过率与波长相对关系

    Figure  7.  The relationship between the transmittance and wavelength of PLZT materials with different levels of Al doping

    图  8  不同Nd掺杂量的PLZT材料透过率与波长相对关系

    Figure  8.  The relationship between the transmittance and wavelength of PLZT materials with different levels of Nd doping

    图  9  KTN电光调制器原理图及等效电路图

    Figure  9.  KTN electro-optic modulator schematic and equivalent circuit diagram

    图  10  三种KTN调制器的3 dB带宽测量

    Figure  10.  3 dB bandwidth measurement of three KTN modulators

    表  1  室温下632.5 nm波长测得PMNT材料的二次电光系数和1 kHz电场下的介电常数(除非另附说明)

    Table  1.   The secondary electro-optic coefficient of the PMNT material measured at a wavelength of 632.5 nm at room temperature and the dielectric constant under an electric field of 1 kHz (unless otherwise noted)

    材料QEO系数10-16 m2/V2文献材料介电常数文献
    单晶PMN-8PT8.19[26]薄膜PMN-30PT2800[30]
    陶瓷PMN-25PT+4%La8[27]薄膜PMN-40PT1800[32]
    陶瓷PMN-25PT+3%La40[27]薄膜PMN-30PT+La2025[32]
    陶瓷PMN-25PT+2%La (T = 330 K)10[27]薄膜PMN-30PT+Pr2398[32]
    陶瓷PMN-33PZT(T = 340 K)18[28]
    陶瓷PMN-23PZT6[28]
    陶瓷PMN-10PZT (T = 280 K)2.5[28]
    下载: 导出CSV

    表  2  室温下在632.5 nm波长测得PLZT材料的二次电光系数和1 kHz电场下的介电常数(除非另附说明)

    Table  2.   The secondary electro-optic coefficient of the PLZT material measured at a wavelength of 632.5 nm at room temperature and the dielectric constant under an electric field of 1 kHz (unless otherwise noted)

    PLZT材料La/Ti/ZrQEO系数10-16 m2/V2文献PLZT材料La/Ti/Zr介电常数文献
    8/65/35 PLZT(λ=532 nm)25[35]9/65/35PLZT+0.15 mol% Li+Bi(T=348 K)7819[37]
    8.8/65/35 PLZT(T=258 K)2.8[33]9/65/35PLZT+0.25 mol% Bi2O3+CuO(T=373 K)11290[38]
    9/65/35 PLZT(λ=532 nm)3.7[35]9/65/35PLZT(T=373 K)10539[39]
    9.4/65/35 PLZT(T=244 K)1.48[33]7/65/35PLZT+0.08 wt% Cr2O3(T=427 K)13985[40]
    10/65/35PLZT(λ=532 nm)1.3[35]薄膜PLZT+2%La(f=100 Hz)1502.59[42]
    11/40/60PLZT+0.1 mol%Dy(T=385 K)5.59[34]PLZT+1.50 mol%Al(T=385 K)16000[45]
    下载: 导出CSV

    表  3  KTN材料二次电光系数对比分析

    Table  3.   Comparative analysis of quadratic electro-optic coefficient of PLZT materials

    单位KTN(Ta/Nb)QEO系数(10-16 m2/V2测量条件备注
    NTT公司——224T=314 K
    λ=685 nm
    山东科学院0.75/0.2565λ=633 nm调研已经达到10-14量级
    0.63/0.3786室温λ=633 nm
    美国宾夕法尼亚大学0.7/0.320T=299 K
    λ=532 nm
    Kovacs前
    6940.45 K/s降温Kovacs后
    哈尔滨工业大学0.61/0.3959.6T=296 K
    λ=632.8 nm
    下载: 导出CSV

    表  4  PMNT、PLZT和KTN电光调制可行性分析(附LN作为比较)

    Table  4.   Feasibility analysis of electro-optic modulation by PMNT, PLZT and KTN (with LN for comparison)

    材料名称有效电光系数半波电压调制电压视场产品成熟度
    LN6.8×10-12(m/V)1900 V~600 V<5°非常成熟
    PMNT~4×10-15(m2/V2)~60 V~20 V较成熟(硅酸盐所)
    PLZT~5×10-16(m2/V2)~160 V~50 V较成熟(硅酸盐所)
    KTN0.2×10-15(m2/V2)~260 V~80 V~30°较成熟(宾夕法尼亚)
    4~9×10-15(m2/V2)~50 V~16 V较成熟(山东科学院)
    2.24×10-14(m2/V2)~24 V~8 V较成熟(NTT公司)
    下载: 导出CSV

    表  5  PMNT、PLZT和KTN电光调制适用性分析

    Table  5.   Applicability analysis of electro-optic modulation by PMNT, PLZT and KTN

    调制器类型调制性能衍生难题解决方式及效果
    低电压调制大视场
    LN××
    PMNT响应速度慢、光散射严重难以应用于高速电光调制
    PLZT半波电压高Dy掺杂使二次电光性能明显提高
    透过率低Dy掺杂和Al掺杂使透过率明显提高,但无法突破65%
    KTN实际应用调制带宽低通过优化系统结构,理论上可以达到ns级响应及数百兆赫兹调制带宽,但实际仍未实现。
    下载: 导出CSV
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