氙灯对硅PIN光电二极管的损伤规律研究

陈思琪; 杜隆坤; 曹保锋; 李登辉; 宁王师

doi:10.37188/CO.2026-0024

氙灯对硅PIN光电二极管的损伤规律研究

doi: 10.37188/CO.2026-0024

cstr: 32171.14.CO.2026-0024

核生化灾害防护化学全国重点实验室, 北京 102205

基金项目: 国家重点研发计划项目（No. 2024YFF1400900）

详细信息

作者简介:
陈思琪（2000—），女，广东潮州人，硕士研究生，目前就读于中国人民解放军军事科学院防化研究院，主要从事光电器件毁伤方面的研究。E-mail：1749130854@qq.com

李登辉（1991—），男，浙江杭州人，理学博士，副研究员，2021年于南开大学物理科学学院获得理学博士学位，主要从事光与物质相互作用方面的研究。E-mail：lidenghui@mail.nankai.edu.cn

宁王师（1973—），男，山西夏县人，理学硕士，正高工，2006年于重庆大学数理学院硕士研究生毕业，主要从事光信号探测方面的研究。E-mail：ning_wangshi@sina.com

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出版历程
- 网络出版日期: 2026-04-16

Investigation of damage rules in silicon PIN photodiodes under xenon lamp irradiation

State Key Laboratory of Chemistry for NBC Hazards Protection, Beijing 102205, China

Funds: Supported by

More Information

Corresponding author: lidenghui@mail.nankai.edu.cn; ning_wangshi@sina.com

摘要

摘要:
为研究硅PIN光电二极管（简称PIN管）在氙灯辐照下的性能退化规律和损伤机理，本研究定义了PIN管的探测能力，搭建了50 kW氙灯损伤实验平台，以S5106型PIN管为对象，通过实时监测其输出光电流和表面温度的变化，探究了PIN管损伤时探测能力退化的影响因素和损伤阈值特性。并基于一维热扩散理论建立了PIN管的损伤阈值模型，通过与实验阈值结果进行对比，验证了模型的准确性。根据探测能力是否可恢复，将PIN管损伤分为软损伤和硬损伤。软损伤时探测能力与辐照时间、表面温度均呈非线性负相关关系；硬损伤时辐照度阈值与辐照时间的平方根成反比，与损伤阈值模型一致，其损伤阈值对应的最小辐照度约为6.6 W/cm²（对应辐照时间约为382 s），此时表面温度范围为385.77±4.16 °C。理论分析表明，软损伤源于热效应导致的载流子迁移率下降及漏电流增大，硬损伤源于热效应导致的光学窗口硅橡胶熔融开裂与PN结热失效。本研究明确了PIN管软损伤和硬损伤的影响因素及规律，并确定了其硬损伤阈值，为宽谱强光探测场景下PIN管的性能评估与防护设计提供了量化依据。
- 硅PIN光电二极管 /
- 氙灯 /
- 宽谱强光 /
- 损伤规律 /
- 阈值 /
- 热效应
Abstract:
This study investigates the performance degradation and underlying damage mechanisms of silicon PIN photodiodes under xenon lamp irradiation. To this end, detectivity is defined and operationalized. A 50 kW xenon lamp irradiation test platform was developed, with the S5106-type silicon PIN photodiodes selected as the representative test device. Real-time monitoring of output photocurrent and surface temperature enabled systematic analysis of the factors governing detectivity degradation, as well as characterization of the damage threshold. A damage threshold model for silicon PIN photodiodes was developed based on the one-dimensional heat diffusion equation. Model accuracy was validated against the experimentally measured threshold data. Silicon PIN photodiode damage was categorized into two regimes—soft damage and hard damage—based on the recoverability of detectivity. Under soft damage conditions, the detectivity of the device exhibited a nonlinear negative correlation with both irradiation time and surface temperature. The hard damage irradiance thresholds followed an inverse-square-root dependence on irradiation time, a trend fully consistent with the damage threshold model. Hard damage was observed at a minimum irradiance of approximately 6.6 W/cm², corresponding to an irradiation time of about 382 s. Under this threshold condition, the surface temperature ranged within 385.77±4.16°C. Theoretical analysis indicated that soft damage primarily arose from thermally induced degradation of carrier mobility and increased leakage current. Conversely, hard damage resulted from melting and cracking of the silicone rubber optical window, as well as thermally induced functional failure of the PN junction. The findings provide a quantitative basis for performance evaluation and protection design of silicon PIN photodiodes employed in broad-spectrum high-intensity optical detection scenarios.
- silicon PIN photodiode /
- xenon lamp /
- broad-spectrum high-intensity light /
- damage rules /
- threshold /
- thermal effects

HTML全文

图 1 氙灯损伤平台及PIN管光电流测量电路示意图。图中I₁为PIN管输出光电流，I₂为流过反相输入端电阻R₃的电流，I₃为流过分流电阻R₁的电流，-U_o为运算放大器A的输出电压

Figure 1. Xenon lamp damage test platform with silicon PIN photodiode photocurrent measurement circuit. I₁: photocurrent of silicon PIN photodiode; I₂: current through inverting input resistor (R₃); I₃: current through shunt resistor (R₁); Uₒ: output voltage of operational amplifier A

下载: 全尺寸图片幻灯片

图 2 PIN管输出电流退化规律。（a）无损伤情况下，初始输出电流I₁随辐照度E变化曲线；（b）不同辐照度E下，PIN管探测能力D随辐照时间t变化曲线

Figure 2. Output current degradation rules in the silicon PIN photodiode. (a) Initial output current (I₁) versus irradiance (E) for the undamaged device. (b) Detectivity (D) versus irradiation time (t) at various irradiance levels (E)

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图 3 不同辐照度下，PIN管探测能力D随表面温度T变化曲线

Figure 3. Detectivity (D) versus surface temperature (T) at various irradiance levels

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图 4 PIN管内部等效电路，其中I_PD为光电流，C_J为等效电容，R_SH为并联电阻，R_S为串联电阻

Figure 4. Internal equivalent circuit of the silicon PIN photodiode. I_PD: photocurrent; C_J: junction capacitance; R_SH: shunt resistance; R_S: series resistance

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图 5 不同辐照度下，PIN管的I₁′随时间变化情况。（a）PIN管发生硬损伤的I₁′变化情况；（b）辐照度为6.39W/cm²时，PIN管的I₁′下降至稳定的情况

Figure 5. Variation of I₁′ with time(t) under different irradiances. (a) Variation of I₁′ under hard damage conditions in a silicon PIN photodiode; (b) Variation of I₁′ of the silicon PIN photodiode decreasing to stability at an irradiance of 6.39 W/cm²

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图 6 PIN管硬损伤表面温度变化情况。（a）不同辐照度实验中，硬损伤对应温度，横坐标为实验次序；（b）不同辐照度下，温度T随辐照时间t变化曲线

Figure 6. Variation of surface temperature with hard damage in a silicon PIN photodiode. (a) Temperature corresponding (T) to hard damage at different irradiance levels, plotted against the experimental sequence. (b) Temperature (T) versus irradiation time (t) under different irradiance levels (E)

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图 7 造成PIN管硬损伤的辐照度阈值（E_th）随辐照时间（t）的变化

Figure 7. Variation of power density threshold (E_th) for hard damage of the silicon PIN photodiodes with irradiation time (t)

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图 8 损伤前后PIN管的表面形貌差异。（a）损伤前PIN管表面形貌；（b）损伤后PIN管表面形貌，表面发生变化的区域为熔融开裂的硅橡胶

Figure 8. Surface morphology differences of the silicon PIN photodiodes before and after damage. (a) Surface morphology of the silicon PIN photodiode before damage; (b) Surface morphology of the silicon PIN photodiode after damage. The altered surface region is characterized by melting-induced cracking of the silicone rubber

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图 9 损伤前后PIN管电参数变化。（a）损伤前后PIN管的正向伏安特性曲线，橙色代表损伤前PIN管的正向伏安特性曲线，绿色、紫色、蓝色分别代表不同程度损伤后PIN管的伏安特性曲线；（b）损伤前后PIN管的漏电流（I）变化情况，图中纵坐标刻度范围一致，随着损伤程度增大，PIN管漏电流不稳定性增加

Figure 9. Variations in electrical parameters of the silicon PIN photodiode before and after damage. (a) Forward current-voltage (I-V) characteristics of the PIN photodiode before and after damage. The orange curve represents the forward I-V characteristic before damage; the green, purple, and blue curves represent the I-V characteristics after damage of increasing severity, respectively. (b) Variations in leakage current (I) before and after damage. The ordinate (vertical axis) scale is consistent across plots. Leakage current instability increases progressively with the extent of damage

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表 1 PIN管探测能力的温度相关性拟合参数取值（R²>0.999）

Table 1. Fitting parameters for the temperature-dependent correlation of detectivity (R²>0.999)

E/(W·cm⁻²)	6.69	6.93	7.36	7.68	8.04	9.03	12.01	14.21	15.89	16.09	29.86	35.66	42.47	48.01
a	−0.68	−0.35	−0.35	−0.68	−0.82	−0.80	−0.42	−0.43	−0.17	−0.17	−0.41	−0.28	−0.28	−0.27
b	1.77	1.47	1.46	1.79	1.93	1.89	1.51	1.51	1.25	1.23	1.50	1.35	1.40	1.35
c	−0.002	−0.003	−0.003	−0.002	−0.002	−0.002	−0.003	−0.003	−0.004	−0.003	−0.003	−0.003	−0.003	−0.003

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表 2 损伤前后PIN管漏电流变化情况

Table 2. Leakage current of the silicon PIN photodiodes before and after damage

S5106	Leakage current（V_R=10 V）
Before damage	0.30 µA
After damage 1	0.36 µA
After damage 2	0.40 µA
After damage 3	0.42 µA

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