Volume 3 Issue 5
Nov.  2010
Turn off MathJax
Article Contents
ZHAO Ke-jie, XIE Quan, XIAO Qing-quan, YU Zhi-qiang. Study on semiconductor Mg2Si thin films[J]. Chinese Optics, 2010, 3(5): 446-451.
Citation: ZHAO Ke-jie, XIE Quan, XIAO Qing-quan, YU Zhi-qiang. Study on semiconductor Mg2Si thin films[J]. Chinese Optics, 2010, 3(5): 446-451.

Study on semiconductor Mg2Si thin films

  • Received Date: 11 Mar 2010
  • Rev Recd Date: 13 May 2010
  • Publish Date: 25 Oct 2010
  • Recent developments of Mg2Si films are reviewed. On the basis of the crystal structure of Mg2Si, the basic properties, preparation methods, and application prospects of the films are presented. The researches show that Mg2Si is a kind of semiconductor with narrow-band-gap, which has good applications in photovoltaic and thermoelectric devices. Furthermore, the film is a new kind of environmental-friendly semiconductor material, and because the compositions of elements are rich in strata and non-toxic pollution, the materials attract great attention. In the technique of epitaxial growth, the relatively mature methods include molecular beam epitaxy, pulsed laser deposition, reaction-diffusion and so on. However, these methods have the problems of harsh preparation and poor quality of the thin film. Finally, current problems and future research trends of the materials are briefly discussed.

     

  • loading
  • [1] MAKITA Y. Kankyo Semiconductors-why and how . Proceeding of Japan-UK joint Workshop on Kankyo-Semiconductors . Tsukuba International Congress Center,August 3-4,2000. [2] WANG Y,WANG X N,MEI Z X,et al.. Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrate[J]. J. Appl. Phys.,2007,102(12):126102-126104. [3] 方容川.固体光谱学[M]. 合肥:中国科学技术大学出版社,2003:60. FANG R CH. Solid Spectroscopy[M]. Hefei:University of Science and Technology of China Press, 2003:60.(in Chinese) [4] SAMSONOV G V,DVORINA L A. Silicides[M]. Moscow:Metallurgy Publishing House,1979:447. [5] TAMURA D,NAGAI R,SUGIMOTO K,et al.. Melt growth and characterization of Mg2Si bulk crystals[J]. Thin Solid Films,2007,515:8272-8276. [6] VANTOMME A,LANGOUCHE G,MAHAN J E,et al.. Growth mechanism and optical properties of semiconducting Mg2Si thin films[J]. Microelectronic Eng.,2000,50(1-4):237-242. [7] AU-YANG M Y,COHEN M. Electronic structure and optical properties of Mg2Si, Mg2Ge, and Mg2Sn[J]. Physical Rev.,1969,178(3):1358-1364. [8] AYMERICH F,MULA G. Pseudopotential band structures of Mg2Si, Mg2Ge, Mg2Sn, and of the solid solution Mg2Ge, Sn[J]. Physical Status Solidi,1970,42(2): 697-704. [9] CORKILL J L,COHEN M L. Structural, bonding, and electronic properties of IIA-IV antifluorite compounds[J]. Physical Rev. B,1993,48(23):17138-17144. [10] IMAI Y,WATANABE A. Energetics of alkaline-earth metal silicides calculated using a first-principle pseudopotential method[J]. Intermetallics,2002,10:333-341. [11] IMAI Y,WATANABE A,MUKAIDA M. Electronic structures of semiconducting alkaline-earth metal silicides[J]. J. Alloy. Comp.,2003,358(1-2):257-263. [12] 陈茜,谢泉,闫万琚,等. Mg2Si电子结构及光学性质的研究[J]. 功能材料 ,2007年增刊(38)卷:4119-4123. CHEN Q,XIE Q,YAN W J,et al.. Study on the electronic structure and optical properties for Mg2Si[J]. Functional Materials,2007 Supplement(38)Vol:4119-4123.(in Chinese) [13] SONG S W,STRIEBEL K A,SONG X Y,et al.. Amorphous and nanocrystalline Mg2Si thin-film electrodes[J]. J. Power Sources,2003,119-121:110-112. [14] SONG S W,STRIEBEL K A,et al.. Electrochemical studies of nanoncrystalline Mg2Si thin film electrodes orepared by pulsed laser deposition[J]. J. Electrochem. Soc.,2003,150(1):121-127. [15] MAHAN J E,VANTOMME A,LANGOUCHE G,et al.. Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy[J]. Physical Rev. B,1996,54(23):16965-16971. [16] GORANOVA E,AMOV B,BALEVA M,et al... Ion beam synthesis of Mg2Si[J]. J. Mater. Sci.,2004,39:1857-1859. [17] KAMILOV T S,KABILOV D K,KAMILOVA R Kn,et al.. Investigation of the magnesium silicide Mg2Si films . 2006 International Conference on Thermoelectrics,Vienna,Austria 6-10 Aug,2006:468-469. [18] CHU W K,LAU S S,MVLLER H,et al.. Implanted noble gas atoms as diffusion markers in silicide formation[J]. Thin Solid Films,1975,25(2):393-402. [19] WITTMER M,LVTHY W,Von ALLMEN M. Laser induced reaction of magnesium with silicon[J]. Phys. Lett. A,1979,75(1-2):127-130. [20] JANEGA P L,MCCAFFREY J,LANDHEER D,et al.. Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures[J]. Appl. Phys. Lett.,1988,53(21):2056-2058. [21] BOHER P,HOUDY P,KVHNE M,et al.. Tungsten/magnesium silicide multilayers for soft X-ray optics[J]. J. X-Ray Sci. Technol.,1992,3(2):118-132. [22] VANTOMME A,MAHAN J E,LANGOUCH G B,et al.. Thin film growth of semiconducting Mg2Si by codeposition[J]. Appl. Phys. Lett.,1997,70(9):1086-1088. [23] TANI J,KIDO H. Thermoelectric properties of Sb-doped Mg2Si semiconductors[J]. Intermetallics,2007,15:1202-1207. [24] TANI J,KIDO H. Thermoelectric properties of Bi-doped Mg2Si semiconductors[J]. Physical B,2005,364:218-224. [25] SONG R B,AIZAWA T,SUN J Q. Synthesis of Mg2Si1-xSnx solid solutions as thermoelectric materials by bulk mechanical alloying and hot pressing[J]. Mater. Sci. Eng. B,2007,136(2-3):111-117.
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索
    Article views(4414) PDF downloads(1861) Cited by()
    Proportional views

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return