Volume 13 Issue 1
Feb.  2020
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WANG Xiao-Dong, YAN Wei, LI Zhao-feng, ZHANG Bo-wen, HUANG Zhen, YANG Fu-hua. Application of planar antenna in field-effect transistor terahertz detectors[J]. Chinese Optics, 2020, 13(1): 1-13. doi: 10.3788/CO.20201301.0001
Citation: WANG Xiao-Dong, YAN Wei, LI Zhao-feng, ZHANG Bo-wen, HUANG Zhen, YANG Fu-hua. Application of planar antenna in field-effect transistor terahertz detectors[J]. Chinese Optics, 2020, 13(1): 1-13. doi: 10.3788/CO.20201301.0001

Application of planar antenna in field-effect transistor terahertz detectors

doi: 10.3788/CO.20201301.0001
Funds:

Supported by National Key Research and Development Fund No. 2016YFA02005003

Natural Science Foundation of China No. 61474115

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  • In order to improve the responsivity and reduce the noise equivalent power of Field-Effect Transistor (FET) THz detectors, a suitable planar antenna structure is necessary.In this paper, we investigate the research progress of FET THz detectors integrated with planar antenna structures. Firstly, we analyze the working principle of FET THz detectors and clarify that an integrated planar antenna could effectively improve the detector's performance by enhancing its coupling efficiency with terahertz waves. Secondly, we present some typical planar antennas and discuss their pros and cons. These include the dipole antenna, the patch antenna, the slot antenna, the grating-gate, and others, which are each compared with respect to responsivity for the detectors. Finally, we find that the responsivity of the FET THz detectors can be greatly improved when applying planar antenna structure and that each type of antennas contributes uniquely. This work introduces several planar antennas integrated into FET THz detectors, including the performance and research progress of various antennas.Some existing problems are described and some predictions of the future development trends for this technology are summarized.

     

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  • [1]
    DYAKONOV M, SHUR M. Shallow water analogy for a ballistic field effect transistor: new mechanism of plasma wave generation by dc current[J]. Physical Review Letters, 1993, 71(15): 2465-2468. doi: 10.1103/PhysRevLett.71.2465
    [2]
    DYAKONOV M, SHUR M. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid[J]. IEEE Transactions on Electron Devices, 1996, 43(3): 380-387. doi: 10.1109/16.485650
    [3]
    DYAKONOV M I, SHUR M S. Plasma wave electronics: Novel terahertz devices using two dimensional electron fluid[J]. IEEE Transactions on Electron Devices, 1996, 43(10): 1640-1645. doi: 10.1109/16.536809
    [4]
    LU J Q, SHUR M A, WEIKLE R M, et al.Detection of microwave radiation by electronic fluid in AlGaN/GaN heterostructure field effect transistors[C]. Proceedings of 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, IEEE, 1997: 211-217.
    [5]
    EL FATIMY A, TOMBET S B, TEPPE F, et al.Terahertz detection by GaN/AlGaN transistors[J]. Electronics Letters, 2006, 42(23): 1342-1344. doi: 10.1049/el:20062452
    [6]
    BROWN E R, MCINTOSH K A, NICHOLS K B, et al.Photomixing up to 3.8 THz in low-temperature-grown GaAs[J]. Applied Physics Letters, 1995, 66(3): 285-287. doi: 10.1063/1.113519
    [7]
    LU J Q, SHUR M S, HESLER J L, et al.Terahertz detector utilizing two-dimensional electronic fluid[J]. IEEE Electron Device Letters, 1998, 19(10): 373-375. doi: 10.1109/55.720190
    [8]
    LV J Q, SHUR M S. Terahertz detection by high-electron-mobility transistor: enhancement by drain bias[J]. Applied Physics Letters, 2001, 78(17): 2587-2588. doi: 10.1063/1.1367289
    [9]
    KNAP W, DENG Y, RUMYANTSEV S, et al.Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor[J]. Applied Physics Letters, 2002, 80(18): 3433-3435. doi: 10.1063/1.1473685
    [10]
    KNAP W, DENG Y, RUMYANTSEV S, et al.Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors[J]. Applied Physics Letters, 2002, 81(24): 4637-4639. doi: 10.1063/1.1525851
    [11]
    KNAP W, KACHOROVSKⅡ V, DENG Y, et al.Nonresonant detection of terahertz radiation in field effect transistors[J]. Journal of Applied Physics, 2002, 91(11): 9346-9353. doi: 10.1063/1.1468257
    [12]
    KNAP W, DYAKONOV M, COQUILLAT D, et al.Field effect transistors for terahertz detection: physics and first imaging applications[J]. Journal of Infrared, Millimeter, and Terahertz Waves, 2009, 30(12): 1319-1337. http://d.old.wanfangdata.com.cn/OAPaper/oai_arXiv.org_0907.2523
    [13]
    KOPYT P, MARCZEWSKI J, KUCHARSKI K, et al.Planar antennas for THz radiation detector based on a MOSFET[C]. Proceedings of 2011 International Conference on Infrared, Millimeter, and Terahertz Waves, IEEE, 2011: 1-2.
    [14]
    孙建东.室温高灵敏度场效应自混频太赫兹波检测器[D].苏州: 中国科学院大学苏州纳米技术与纳米仿生研究所, 2012.

    SUN J D. High-responsivity, room-temperature, self-mixing terahertz detectors based on high-electron-mobility field-effect transistor[D]. Suzhou: Graduate University of the Chinese Academy of Sciences, 2012. (in Chinese)
    [15]
    ZHANG B W, YAN W, LI ZH F, et al.Analysis of substrate effect in field effect transistor terahertz detectors[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2017, 23(4): 8500607. http://cn.bing.com/academic/profile?id=68cf64539602e5b17ae4a95cd767215e&encoded=0&v=paper_preview&mkt=zh-cn
    [16]
    LISAUSKAS A, PFEIFFER U, ÖJEFORS E, et al.Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors[J]. Journal of Applied Physics, 2009, 105(11): 114511. doi: 10.1063/1.3140611
    [17]
    孙建冬, 孙云飞, 周宇, 等.蝶形天线增强的HEMT室温太赫兹探测器[J].微纳电子技术, 2011, 48(8): 215-219. http://d.old.wanfangdata.com.cn/Periodical/wndzjs201104002

    SUN J D, SUN Y F, ZHOU Y, et al.Room temperature terahertz detectors based on HEMTs enhanced by bowtie antennas[J]. Micronanoelectronic Technology, 2011, 48(8): 215-219. (in Chinese) http://d.old.wanfangdata.com.cn/Periodical/wndzjs201104002
    [18]
    SUN J D, SUN Y F, ZHOU Y, et al.A terahertz detector based on AlGaN/GaN high electron mobility transistor with bowtie antennas[J]. AIP Conference Proceedings, 2011, 1399(1): 893-894. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=CC0212110879
    [19]
    SUN J D, SUN Y F, WU D M, et al.High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor[J]. Applied Physics Letters, 2012, 100(1): 013506. doi: 10.1063/1.3673617
    [20]
    BAUER M, LISAUSKAS A, BOPPEL S, et al.Bow-tie-antenna-coupled terahertz detectors using AlGaN/GaN field-effect transistors with 0.25 micrometer gate length[C]. Proceedings of 2013 European Microwave Integrated Circuit Conference, IEEE, 2013: 212-215.
    [21]
    PFEIFFER U R, OJEFORS E. A 600-GHz CMOS focal-plane array for terahertz imaging applications[C]. Proceedings of ESSCIRC 2008-34th European Solid-State Circuits Conference, IEEE, 2008: 110-113.
    [22]
    BAUER M, RÄMER A, BOPPEL S, et al.High-sensitivity wideband THz detectors based on GaN HEMTs with integrated bow-tie antennas[C]. Proceedings of 2015 10th European Microwave Integrated Circuits Conference, IEEE, 2015: 1-4.
    [23]
    BOPPEL S, LISAUSKAS A, MUNDT M, et al.CMOS integrated antenna-coupled field-effect transistors for the detection of radiation from 0.2 to 4.3 THz[J]. IEEE Transactions on Microwave Theory and Techniques, 2012, 60(12): 3834-3843. doi: 10.1109/TMTT.2012.2221732
    [24]
    GUO W L, WANG L, CHEN X SH, et al.Graphene-based broadband terahertz detector integrated with a square-spiral antenna[J]. Optics Letters, 2018, 43(8): 1647-1650. doi: 10.1364/OL.43.001647
    [25]
    SPIRITO D, COQUILLAT D, DE BONIS S L, et al.High performance bilayer-graphene terahertz detectors[J]. Applied Physics Letters, 2014, 104(6): 061111. doi: 10.1063/1.4864082
    [26]
    TONG J Y, MUTHEE M, CHEN S Y, et al.Antenna enhanced graphene THz emitter and detector[J]. Nano Letters, 2015, 15(8): 5295-5301. doi: 10.1021/acs.nanolett.5b01635
    [27]
    YANG X X, VOROBIEV A, GENERALOV A, et al.A flexible graphene terahertz detector[J]. Applied Physics Letters, 2017, 111(2): 021102. doi: 10.1063/1.4993434
    [28]
    IKAMAS K, IBIRAIT E · D, LISAUSKAS A, et al.Broadband terahertz power detectors based on 90-nm silicon CMOS transistors with flat responsivity up to 2.2 THz[J]. IEEE Electron Device Letters, 2018, 39(9): 1413-1416. doi: 10.1109/LED.2018.2859300
    [29]
    DYER G C, VINH N Q, ALLEN S J, et al.A terahertz plasmon cavity detector[J]. Applied Physics Letters, 2010, 97(19): 193507. doi: 10.1063/1.3513339
    [30]
    DYER G C, AIZIN G R, RENO J L, et al.Novel tunable millimeter-wave grating-gated plasmonic detectors[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17(1): 85-91. doi: 10.1109/JSTQE.2010.2049096
    [31]
    KIM S, ZIMMERMAN J D, FOCARDI P, et al.Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors[J]. Applied Physics Letters, 2008, 92(25): 253508. doi: 10.1063/1.2947587
    [32]
    VICARELLI L, VITIELLO M S, COQUILLAT D, et al.Graphene field-effect transistors as room-temperature terahertz detectors[J]. Nature Materials, 2012, 11(10): 865-871. doi: 10.1038/nmat3417
    [33]
    XU L J, TONG F CH, BAI X, et al.Design of miniaturised on-chip slot antenna for THz detector in CMOS[J]. IET Microwaves, Antennas & Propagation, 2018, 12(8): 1324-1331. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=e5e752ff86b56a95bc21ff2525cf0071
    [34]
    TANIGAWA T, ONISHI T, IMAFUJI O, et al.AlGaN/GaN plasmon-resonant terahertz detectors with on-chip patch antennas[C]. Proceedings of 2009 Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA, 2009: CThFF7.
    [35]
    BOPPEL S, LISAUSKAS A, KROZER V, et al.Performance and performance variations of sub-1 THz detectors fabricated with 0.15 μm CMOS foundry process[J]. Electronics Letters, 2011, 47(11): 661-662. doi: 10.1049/el.2011.0687
    [36]
    LIU ZH Y, LIU L Y, YANG J, et al.A CMOS fully integrated 860-GHz terahertz sensor[J]. IEEE Transactions on Terahertz Science and Technology, 2017, 7(4): 455-465. doi: 10.1109/TTHZ.2017.2692040
    [37]
    KEAY B J, ZEUNER S, ALLEN JR S J, et al.Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices[J]. Physical Review Letters, 1995, 75(22): 4102-4105. doi: 10.1103/PhysRevLett.75.4102
    [38]
    DREXLER H, SCOTT J S, ALLEN S J, et al.Photon-assisted tunneling in a resonant tunneling diode: stimulated emission and absorption in the THz range[J]. Applied Physics Letters, 1995, 67(19): 2816-2818. doi: 10.1063/1.114794
    [39]
    PERALTA X G, ALLEN S J, WANKE M C, et al.Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors[J]. Applied Physics Letters, 2002, 81(9): 1627-1629. doi: 10.1063/1.1497433
    [40]
    POPOV V V, POLISCHUK O V, TEPERIK T V, et al.Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor[J]. Journal of Applied Physics, 2003, 94(5): 3556-3562. doi: 10.1063/1.1599051
    [41]
    POPOV V V, POLISCHUK O V, SHUR M S. Resonant excitation of plasma oscillations in a partially gated two-dimensional electron layer[J]. Journal of Applied Physics, 2005, 98(3): 033510. doi: 10.1063/1.1954890
    [42]
    POPOV V V, TSYMBALOV G M, FATEEV D V, et al.Cooperative absorption of terahertz radiation by plasmon modes in an array of field-effect transistors with two-dimensional electron channel[J]. Applied Physics Letters, 2006, 89(12): 123504. doi: 10.1063/1.2356378
    [43]
    POPOV V V, SHUR M S, TSYMBALOV G M, et al.Higher-order plasmon resonances in GaN-based field-effect transistor arrays[J]. International Journal of High Speed Electronics and Systems, 2007, 17(3): 557-566. doi: 10.1142/S0129156407004746
    [44]
    POPOV V V, KOUDYMOV A N, SHUR M, et al.Tuning of ungated plasmons by a gate in the field-effect transistor with two-dimensional electron channel[J]. Journal of Applied Physics, 2008, 104(2): 024508. doi: 10.1063/1.2955731
    [45]
    POPOV V V, FATEEV D V, OTSUJI T, et al.Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell[J]. Applied Physics Letters, 2011, 99(24): 243504. doi: 10.1063/1.3670321
    [46]
    POPOV V V, PALA N, SHUR M S. Room temperature terahertz plasmonic detection by antenna arrays of field-effect transistors[J]. Nanoscience and Nanotechnology Letters, 2012, 4(10): 1015-1022. doi: 10.1166/nnl.2012.1442
    [47]
    TANIGAWA T, ONISHI T, TAKIGAWA S, et al.Enhanced responsivity in a novel AlGaN/GaN plasmon-resonant terahertz detector using gate-dipole antenna with parasitic elements[C]. Proceedings of the 68th Device Research Conference, IEEE, 2010: 167-168.
    [48]
    HOU H W, LIU ZH H, TENG J H, et al.A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas[J]. Applied Physics Express, 2017, 10(1): 014101. doi: 10.7567/APEX.10.014101
    [49]
    SUN Y F, SUN J D, ZHOU Y, et al.Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas[J]. Applied Physics Letters, 2011, 98(25): 252103. doi: 10.1063/1.3601489
    [50]
    SUN J D, QIN H, LEWIS R A, et al.Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector[J]. Applied Physics Letters, 2012, 100(17): 173513. doi: 10.1063/1.4705306
    [51]
    HOU H W, LIU ZH H, TENG J H, et al.Modelling of GaN HEMTs as terahertz detectors based on self-mixing[J]. Procedia Engineering, 2016, 141: 98-102. doi: 10.1016/j.proeng.2015.09.225
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