基于Se和有机无机钙钛矿异质结的宽光谱光电探测器制备及其光电特性研究

陈洪宇; 王月飞; 闫珺; 李林; 王贺彬; 卞万朋; 李炳生

doi:10.3788/CO.20191205.1057

Volume 12 Issue 5

Oct. 2019

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Article Contents

Chinese Optics > 2019 > 12(5): 1057-1063.

CHEN Hong-yu, WANG Yue-fei, YAN Jun, LI Lin, WANG He-bin, BIAN Wan-peng, LI Bing-sheng. Fabrication and photoelectric properties of organic-inorganic broad-spectrum photodetectors based on Se microwire/perovskite heterojunction[J]. Chinese Optics, 2019, 12(5): 1057-1063. doi: 10.3788/CO.20191205.1057

Citation:

CHEN Hong-yu, WANG Yue-fei, YAN Jun, LI Lin, WANG He-bin, BIAN Wan-peng, LI Bing-sheng. Fabrication and photoelectric properties of organic-inorganic broad-spectrum photodetectors based on Se microwire/perovskite heterojunction[J]. Chinese Optics, 2019, 12(5): 1057-1063. doi: 10.3788/CO.20191205.1057

Citation:

CHEN Hong-yu, WANG Yue-fei, YAN Jun, LI Lin, WANG He-bin, BIAN Wan-peng, LI Bing-sheng. Fabrication and photoelectric properties of organic-inorganic broad-spectrum photodetectors based on Se microwire/perovskite heterojunction[J]. Chinese Optics, 2019, 12(5): 1057-1063. doi: 10.3788/CO.20191205.1057

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Fabrication and photoelectric properties of organic-inorganic broad-spectrum photodetectors based on Se microwire/perovskite heterojunction

doi: 10.3788/CO.20191205.1057

CHEN Hong-yu^{1, †
,
,},
WANG Yue-fei^{1, †
,},
YAN Jun²,
LI Lin²,
WANG He-bin¹,
BIAN Wan-peng¹,
LI Bing-sheng^{1
,
,}

1.
Department of Physics, Harbin Institute of Technology, Harbin 150001, China
2.
School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China

Funds:

National Natural Science Foundation of China 61874037

National Natural Science Foundation of China 11474076

Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education 2017KM003

Fundamental Research Funds for the Central Universities HIT.NSRIF.2019060

More Information

Corresponding author: CHEN Hong-yu, E-mail:chenhy@hit.edu.cn; LI Bing-sheng, E-mail:libingsheng@hotmail.com
Received Date: 30 May 2019
Rev Recd Date: 11 Jun 2019
Publish Date: 01 Oct 2019

Abstract

Abstract

Efficient and stable p-type doping is difficult to achieve. To solve this problem, high-quality p-type Se microwires were fabricated using chemical vapor deposition. A photodetector based on a single Se microtube shows broadband photoresponses with a peak responsivity of 2.8 mA/W at 600 nm under 5 V bias. The cutoff wavelength is estimated to be 675 nm. A p-n heterojunction photodetector using a p-type Se microwire and n-type CH₃NH₃PbCl₃ was also fabricated. Compared to the single Se microtube, the p-n heterojunction photodetector shows obvious reduction in response time and 850% improvement in responsivity. The experimental results indicate that p-n junctions have promising applications in high-performance photodetectors.
- photodetector,
- p-type semiconductor,
- perovskite,
- CH₃NH₃PbCl₃

^†These authors contribute equally

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References(26)

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