Volume 12 Issue 1
Feb.  2019
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Article Contents
SUN Sheng-ming, FAN Jie, XU Li, ZOU Yong-gang, YANG Jing-jing, GONG Chun-yang. Progress of tapered semiconductor diode lasers[J]. Chinese Optics, 2019, 12(1): 48-58. doi: 10.3788/CO.20191201.0048
Citation: SUN Sheng-ming, FAN Jie, XU Li, ZOU Yong-gang, YANG Jing-jing, GONG Chun-yang. Progress of tapered semiconductor diode lasers[J]. Chinese Optics, 2019, 12(1): 48-58. doi: 10.3788/CO.20191201.0048

Progress of tapered semiconductor diode lasers

doi: 10.3788/CO.20191201.0048
Funds:

Jilin Science and Technology Development Plan 20180519018JH

Jilin Science and Technology Development Plan 20190302052GX

Jilin Education Department "135" Science and Technology JJKH20190543KJ

the Innovation Science Foundation of Changchun University of Science and Technology XJJLG-2016-07

More Information
  • Corresponding author: FAN Jie, E-mail:fanjie@cust.edu.cn
  • Received Date: 29 Jan 2018
  • Rev Recd Date: 03 Mar 2018
  • Publish Date: 01 Feb 2019
  • Tapered semiconductor lasers are characterized by high power and high beam quality. As a result, they have attracted much attention and have become a widely researched topic. This review focuses on the three main structures of tapered semiconductor diode lasers:the traditional structure, the distributed Bragg reflector(DBR) structure and the lateral grating structure. This paper summarizes the results of domestical and international representative research from the past ten years, introduces its theoretical research and experimental progress, and predicts the future development of tapered semiconductor lasers.

     

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  • [1]
    刘友强, 曹银花, 李景, 等.激光加工用5 kW光纤耦合半导体激光器[J].光学 精密工程, 2015, 23(5):1279-1287. http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201505011

    LIU Y Q, CAO Y H, LI J, et al.. 5 kW fiber coupling diode laser for laser processing[J]. Opt. Precision Eng., 2015, 23(5):1279-1287.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201505011
    [2]
    张建, 宁永强, 张建伟, 等.微型铷原子钟专用795 nm垂直腔表面发射激光器[J].光学 精密工程, 2014, 22(1):50-57. http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201401009

    ZHANG J, NING Y Q, ZHANG J W, et al.. 795 nm VCSELs for 87Rb based miniaturized atomic clock[J]. Opt. Precision Eng., 2014, 22(1):50-57.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201401009
    [3]
    徐华伟, 宁永强, 曾玉刚, 等.852 nm半导体激光器量子阱设计与外延生长[J].光学 精密工程, 2013, 21(3):590-597. http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201303008

    XU H W, NING Y Q, ZENG Y G, et al.. Design and epitaxial growth of quantum-well for 852 nm laser diode[J]. Opt. Precision Eng., 2013, 21(3):590-597.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201303008
    [4]
    ZHANG Z, ZHENG H, TIAN Y, et al.. Stable scanning of dressing fields on multiwave mixing in optical ring cavity[J]. Quantum Electronics of IEEE Journal, 2014, 50(7):575-580. doi: 10.1109/JQE.2014.2327015
    [5]
    吴涛, 郭栓银.980 nm高功率锥形激光器巴条的制备及光电特性[J].激光与光电子学展, 2016(4):138-143.

    WU T, GUO SH Y. Fabrication and electro-optic properties of 980 nm high-power tapered laser bar[J]. Laser & Optoelectronics Progress, 2016(4):138-143.(in Chinese)
    [6]
    SUMP B, KLEHR A, VU T N, et al.. 975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications[C]. Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers ⅩⅣ, 2015: 93821k.
    [7]
    CHRISTENSEN M, HANSEN A K, NOORDEGRAAF D, et al.. Modulation of frequency doubled DFB-tapered diode lasers for medical treatment[C]. Proc. SPIE 10088, Nonlinear Frequency Generation and Conversion: Materials and Devices ⅩⅥ, 2017: 100881A.
    [8]
    TIMMERMANN A, MEINSCHIEN J, BARTOSCHEWSKI D. Next generation high-brightness diode lasers offer new industrial applications[C]. Proc. SPIE 6876, High Power Diode Laser Technology and Applications Ⅵ, 2008: 68760U.
    [9]
    HANSEN A K, TAWFIEQ M, JENSEN O B, et al.. Concept for power scaling second harmonic generation using a cascade of nonlinear crystals[J]. Optics Express, 2015, 23(12):15921-15934. doi: 10.1364/OE.23.015921
    [10]
    李景, 邱运涛, 曹银花, 等.高亮度锥形半导体激光器[J].发光学报, 2016, 37(8):990-995. http://d.old.wanfangdata.com.cn/Periodical/fgxb201106012

    LI J, QIU Y T, CAO Y H, et al.. High brightness tapered diode laser[J]. Chinese Journal of Luminescence, 2016, 37(8):990-995.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/fgxb201106012
    [11]
    杨晔, 刘云, 秦莉, 等.850 nm高亮度锥形半导体激光器的光电特性[J].发光学报, 2011, 32(6):593-597. http://d.old.wanfangdata.com.cn/Periodical/fgxb201106012

    YANG Y, LIU Y, QIN L, et al.. Electro-optic properties of 850nm high-brightness tapered lasers[J]. Chinese Journal of Luminescence, 2011, 32(6):593-597.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/fgxb201106012
    [12]
    黄海华, 刘云, 杨晔, 等.850 nm锥形半导体激光器的温度特性[J].中国光学, 2013, 6(2):201-207. http://www.chineseoptics.net.cn/CN/abstract/abstract8898.shtml

    HUANG H H, LIU Y, YANG Y, et al.. Temperature characteristics of 850 nm tapered semiconductor lasers[J]. Chinese Optics, 2013, 6(2):201-207.(in Chinese) http://www.chineseoptics.net.cn/CN/abstract/abstract8898.shtml
    [13]
    李璟, 刘媛媛, 马骁宇.电极分离的980 nm锥形激光器的研制[J].半导体学报, 2007, 28(8):1302-1306. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=bdtxb200708026

    LI J, LIU Y Y, MA X Y. High-brightness tapered diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section[J]. Chinese Journal of Semiconductors, 2007, 28(8):1302-1306.(in Chinese) http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=bdtxb200708026
    [14]
    ADAMIEC P, SUMPF B, FEISE D, et al.. Twin-contact 645-nm tapered laser with 500-mW output power[J]. IEEE Photonics Technology Letters, 2009, 21(4):236-238. doi: 10.1109/LPT.2008.2010509
    [15]
    MICHEL N, ODRIOZOLA H, KWOK C H, et al.. High modulation efficiency and high power 1060 nm tapered lasers with separate contacts[J]. Electronics Letters, 2009, 45(2):103-104. doi: 10.1049/el:20093298
    [16]
    WALTHER M, KIEFER R. Improved beam quality for high-power tapered laser diodes with LMG(low-modal-gain) epitaxial layer structures[C]. Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared Ⅱ, 1998: 72-79.
    [17]
    DITTMAR F, SUMPF B, FRICKE J, et al.. High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M2=1.9 at P=4.4 W[J]. IEEE Photonics Technology Letters, 2006, 18(4):601-603. doi: 10.1109/LPT.2006.870152
    [18]
    TIJERO J M G, ODRIOZOLA H, BORRUEL L, et al.. Enhanced brightness of tapered laser diodes based on an asymmetric epitaxial design[J]. IEEE Photonics Technology Letters, 2007, 19(20):1640-1642. doi: 10.1109/LPT.2007.905083
    [19]
    KRAKOWSKI M M, AUZANNEAU S C, CALLIGARO M, et al.. High-power and high-brightness laser diode structures at 980 nm using Al-free materials[C]. Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, 2002: 80-91.
    [20]
    GUO R, ZHENG J, ZHANG Y, et al.. Suppressing longitudinal spatial hole burning with dual assisted phase shifts in pitch-modulated DFB lasers[J]. Science Bulletin, 2015, 60(11):1026-1032. doi: 10.1007/s11434-015-0807-y
    [21]
    MA X, QU H, ZHAO P, et al.. 980 nm tapered lasers with photonic crystal structure for low vertical divergence[C]. Proc. SPIE 10019, Optoelectronic Devices and Integration Ⅵ, 2016: 1001907.
    [22]
    周旭彦, 赵少宇, 马晓龙, 等.低垂直发散角高亮度光子晶体半导体激光器[J].中国激光, 2017, 44(2):0201010. http://www.cnki.com.cn/Article/CJFDTOTAL-JJZZ201702011.htm

    ZHOU X Y, ZHAO SH Y, MA X L, et al.. Low vertical divergence angle and high brightness photonic crystal semiconductor laser[J]. Chinese Journal of Laser, 2017, 44(2):0201010.(in Chinese) http://www.cnki.com.cn/Article/CJFDTOTAL-JJZZ201702011.htm
    [23]
    HUANG S S, ZHANG Y, LIAO Y P, et al.. High-power single-spatial-mode gasb tapered laser around 2.0μm with very small lateral beam divergence[J]. Chinese Physics Letters, 2017, 34(8):084202. doi: 10.1088/0256-307X/34/8/084202
    [24]
    LI Y, WANG J, YANG N, et al.. The output power and beam divergence behaviors of tapered terahertz quantum cascade lasers[J]. Optics Express, 2013, 21(13):15998-16006. doi: 10.1364/OE.21.015998
    [25]
    徐天鸿, 姚辰, 万文坚, 等.锥形太赫兹量子级联激光器输出功率与光束特性研究[J].物理学报, 2015, 64(22):224212. http://d.old.wanfangdata.com.cn/Periodical/wlxb201522001

    XU T H, YAO CH, WAN W J, et al.. Analyses of the output power and beam quality of the tapered terahertz quantum cascade lasers[J]. Acta Physica Sinica, 2015, 64(22):24212.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/wlxb201522001
    [26]
    KAUNGA-NYIRENDA S N, BULL S, LIM J J, et al.. Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self-heating[J]. IET Optoelectronics, 2014, 8(2):99-107. doi: 10.1049/iet-opt.2013.0082
    [27]
    FRICKE J, WENZEL H, MATALLA M, et al.. 980-nm DBR lasers using higher order gratings defined by i-line lithography[J]. Semiconductor Science & Technology, 2005, 20(11):1149-1152. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=bd37b98e37eaf5f64420bab2aa826bba
    [28]
    HASLER K H, SUMPF B, ADAMIEC P, et al.. 5-w DBR tapered lasers emitting at 1060 nm with a narrow spectral linewidth and a nearly diffraction-limited beam quality[J]. IEEE Photonics Technology Letters, 2008, 20(19):1648-1650. doi: 10.1109/LPT.2008.2002744
    [29]
    SUMPF B, ADAMIEC P, FRICKE J, et al.. 1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality[C]. Proc. SPIE 7230, Novel In-Plane Semiconductor Laser ⅤⅢ, 2009: 72301E.
    [30]
    MVLLER A, FRICKE J, BUGGE F, et al.. DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited, narrowband emission at 1030 nm[J]. Applied Physics B, 2016, 122(4):87. doi: 10.1007/s00340-016-6360-9
    [31]
    MVLLER A, ZINK C, FRICKE J, et al.. 1030 nm DBR tapered diode laser with up to 16 W of optical output power[C]. Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers ⅩⅥ, 2017: 101231B.
    [32]
    MVLLER A, FRICKE J, BROX O, et al.. Increased diffraction efficiencies of DBR gratings in diode lasers with adiabatic ridge waveguides[J]. Semiconductor Science & Technology, 2016, 31(12):125011.
    [33]
    PASCHKE K, BLUME G, BROX O, et al.. Watt-level continuous-wave diode lasers at 1180 nm with high spectral brightness[C]. Proc. SPIE 9348, High-Power Diode Laser Technology and Applications ⅩⅢ, 2015: 93480X.
    [34]
    VIHERI L J, KEL J M, AHO A, et al.. High-power 1550 nm tapered DBR lasers fabricated using soft UV-nanoimprint lithography[C]. Proc. SPIE 9733, High-Power Diode Laser Technology and Applications XIV, 2016: 97330Q.
    [35]
    LIU L, QU H W, WANG Y F, et al.. High-brightness single-mode double-tapered laser diodes with laterally coupled high-order surface grating[J]. Optics Letters, 2014, 39(11):3231-3234. doi: 10.1364/OL.39.003231
    [36]
    YAO C, XU T H, WAN W J, et al.. Single-mode tapered terahertz quantum cascade lasers with lateral gratings[J]. Solid-State Electronics, 2016, 122:52-55. doi: 10.1016/j.sse.2016.04.008
    [37]
    YEO C I, JANG S J, YU J S, et al.. 1.3μm laterally tapered ridge waveguide dfb lasers with second-order cr surface gratings[J]. IEEE Photonics Technology Letters, 2010, 22(22):1668-1670.
    [38]
    BECKER S, SCHEUERMANN J, WEIH R, et al.. Laterally coupled DFB interband cascade laser with tapered ridge[J]. Electronics Letters, 2017, 53(11):747-748.
    [39]
    WEIH R, NAHLE L, HOFLING S, et al.. Single mode interband cascade lasers based on lateral metal gratings[J]. Applied Physics Letters, 2014, 105(7):071111. doi: 10.1063/1.4893788
    [40]
    JIA Z W, WANG L J, TAN S, et al.. Improvement of buried grating DFB quantum cascade lasers by small-angle tapered structure[J]. IEEE Photonics Technology Letters, 2017, 29(10):783-785. doi: 10.1109/LPT.2017.2681127
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