采用BCB平整技术的高速850 nm垂直面发射激光器

何晓颖; 董建; 胡帅; 何艳; 吕本顺; 栾信信; 李冲; 胡宗海; 郭霞

doi:10.3788/CO.20181102.0190

Volume 11 Issue 2

Apr. 2018

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Article Contents

Chinese Optics > 2018 > 11(2): 190-197.

HE Xiao-ying, DONG Jian, HU Shuai, HE Yan, LV Ben-shun, LUAN Xin-xin, LI Chong, 胡安琪, HU Zong-hai, GUO Xia. High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique[J]. Chinese Optics, 2018, 11(2): 190-197. doi: 10.3788/CO.20181102.0190

Citation:

HE Xiao-ying, DONG Jian, HU Shuai, HE Yan, LV Ben-shun, LUAN Xin-xin, LI Chong, 胡安琪, HU Zong-hai, GUO Xia. High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique[J]. Chinese Optics, 2018, 11(2): 190-197. doi: 10.3788/CO.20181102.0190

Citation:

HE Xiao-ying, DONG Jian, HU Shuai, HE Yan, LV Ben-shun, LUAN Xin-xin, LI Chong, 胡安琪, HU Zong-hai, GUO Xia. High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique[J]. Chinese Optics, 2018, 11(2): 190-197. doi: 10.3788/CO.20181102.0190

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High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique

doi: 10.3788/CO.20181102.0190

1.
School of Electronic Engineering, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
2.
School of Information, Beijing University of Technology, Beijing 100124, China

Funds:

National Natural Science Foundation of China 61335004

National Natural Science Foundation of China 61675046

National Natural Science Foundation of China 61505003

National Key R&D Program of China 2016YFB0400603

National Key R&D Program of China 2017YFB0400902

National Key R&D Program of China 2017YFF0104801

More Information

Corresponding author: GUO Xia, E-mail: guox@bupt.edu.cn
Received Date: 17 Nov 2017
Rev Recd Date: 16 Dec 2017
Publish Date: 01 Apr 2018

Abstract

Abstract

Vertical-cavity surface-emitting lasers(VCSELs) are widely used in short-reached optical interconnects and data communication links because of their low energy consumption and high modulation speed. Capacitance, as the parasitic parameters, affects the modulation bandwidth. In this paper, parasitic capacitance of VCSELs is reduced by using a low-k benzocyclobutene(BCB) planarization technique. The detail BCB planarization technique has been discussed with optimal process parameters, which is useful for high-speed VCSEL fabrication. The small signal modulation bandwidth of the low-k BCB planarization VCSEL with 7 μm oxide aperture has been achieved to 15.2 GHz.
- vertical-cavity surface-emitting laser,
- high-speed modulation,
- benzocyclobutene (BCB) planarization technique

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References(19)

References

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