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激光等离子体13.5 nm极紫外光刻光源进展

宗楠 胡蔚敏 王志敏 王小军 张申金 薄勇 彭钦军 许祖彦

宗楠, 胡蔚敏, 王志敏, 王小军, 张申金, 薄勇, 彭钦军, 许祖彦. 激光等离子体13.5 nm极紫外光刻光源进展[J]. 中国光学(中英文), 2020, 13(1): 28-42. doi: 10.3788/CO.20201301.0028
引用本文: 宗楠, 胡蔚敏, 王志敏, 王小军, 张申金, 薄勇, 彭钦军, 许祖彦. 激光等离子体13.5 nm极紫外光刻光源进展[J]. 中国光学(中英文), 2020, 13(1): 28-42. doi: 10.3788/CO.20201301.0028
ZONG Nan, HU Wei-min, WANG Zhi-min, WANG Xiao-jun, ZHANG Shen-jin, BO Yong, PENG Qin-Jun, XU Zu-yan. Research progress on laser-produced plasma light source for 13.5 nm extreme ultraviolet lithography[J]. Chinese Optics, 2020, 13(1): 28-42. doi: 10.3788/CO.20201301.0028
Citation: ZONG Nan, HU Wei-min, WANG Zhi-min, WANG Xiao-jun, ZHANG Shen-jin, BO Yong, PENG Qin-Jun, XU Zu-yan. Research progress on laser-produced plasma light source for 13.5 nm extreme ultraviolet lithography[J]. Chinese Optics, 2020, 13(1): 28-42. doi: 10.3788/CO.20201301.0028

激光等离子体13.5 nm极紫外光刻光源进展

doi: 10.3788/CO.20201301.0028
基金项目: 

国家重点研发项目 No.2016YFB0402103

中科院关键技术团队项目 No.GJJSTD20180004

国家重大科研装备研制项目 No.ZDYZ2012-2

国家重大科学仪器设备开发专项 No.2012YQ120048

国家自然科学重点基金项目 No.61535013

中科院理化所所长基金 No.Y8A9021H11

详细信息
    作者简介:

    宗 楠(1982—),女,辽宁阜新人,博士, 2010年于中国科学院物理研究所获得光学博士学位,现为中国科学院理化技术研究所副研究员,硕士生导师,主要从事高功率固体激光及非线性频率变换技术研究。 E-mail:zongnan@mail.ipc.ac.cn

    胡蔚敏(1996—),男,河南濮阳人,硕士研究生,2018年于中国地质大学(武汉)获得学士学位,现为中国科学院理化技术研究所光学硕士研究生,主要从事激光与物质的相互作用方面的研究。E-mail:huweimin18@mails.ucas.ac.cn

    彭钦军(1976-),男,四川南充人,博士,2006年于中国科学院物理研究所获得光学博士学位,现为中国科学院理化技术研究所研究员,博士生导师,主要从事激光物理与技术研究。 E-mail:pengqinjun@163.com

  • 中图分类号: O432.1

Research progress on laser-produced plasma light source for 13.5 nm extreme ultraviolet lithography

Funds: 

Supported by National Key Research and Development Project of China No.2016YFB0402103

Key Technology Team Project of Chinese Academy of Sciences No.GJJSTD20180004

National Major Research and Development Project of China No.ZDYZ2012-2

National Major Scientific Instruments and Equipment Development Project of China No.2012YQ120048

National Natural Science Foundation of China No.61535013

Fund of Technical Institute of Physics and Chemistry, Chinese Academy of Sciences No.Y8A9021H11

More Information
  • 摘要: 半导体产业是高科技、信息化时代的支柱。光刻技术,作为半导体产业的核心技术之一,已成为世界各国科研人员的重点研究对象。本文综述了激光等离子体13.5 nm极紫外光刻的原理和国内外研究发展概况,重点介绍了其激光源、辐射靶材和多层膜反射镜等关键系统组成部分。同时,指出了在提高激光等离子体13.5 nm极紫外光源输出功率的研究进程中所存在的主要问题,包括提高转换效率和减少光源碎屑。特别分析了目前已实现百瓦级输出的日本Gigaphoton公司和荷兰的ASML公司的极紫外光源装置。最后对该项技术的发展前景进行了总结与展望。

     

  • 图 1  LPP-EUV光源示意图

    Figure 1.  Schematic of laser-produced plasma for EUV light source

    图 2  DPP-EUV光源示意图

    Figure 2.  Schematic of discharge-produced plasma for EUV light source

    图 3  Nd:YAG激光(a)与CO2激光(b)等离子体激光能量吸收区域和极紫外辐射区域

    Figure 3.  Laser energy absorption regions and extreme ultraviolet radiation regions from different laser-produced plasma.(a) Nd:YAG laser and (b) CO2 laser

    图 4  ASML-EUVL-NXE系列产品

    Figure 4.  ASML-EUVL-NXE series of products

    图 5  大功率短脉冲CO2激光器的系统示意图

    Figure 5.  System configuration of high power short pulsed CO2 laser

    图 6  液滴发生装置示意图

    Figure 6.  Schematic view of the droplet generator

    表  1  Gigaphoton公司EUV光源产品参数

    Table  1.   Specifications of Gigaphoton EUV system

    Proto#1
    Proof of Concept
    Proto#2
    Key Technology
    Pilot#1
    HVM Ready
    Target Performance EUV power 25 W >100 W 250 W
    CE 3% 4.0% 5.0%
    Pulse Rate 100 kHz 100 kHz 100 kHz
    Output Angle Horizontal 62°upper 62°upper
    Availability ~1 week ~1 week >75%
    Technology Droplet Generator 20~25 μm < 20 μm < 20 μm
    CO2 Laser 5 kW 20 kW 27 kW
    Pre-pulse Laser Picosecond picosecond picosecond
    Collector Mirror Lifetime Test platform 10 days >3 months
    下载: 导出CSV
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  • 收稿日期:  2019-04-11
  • 修回日期:  2019-05-14
  • 刊出日期:  2020-02-01

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