留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Femtosecond pulsed laser induced damage characteristics on Si-based multi-layer film

ZHENG Chang-bin SHAO Jun-feng LI Xue-lei WANG Hua-long WANG Chun-rui CHEN Fei WANG Ting-feng GUO Jin

郑长彬, 邵俊峰, 李雪雷, 王化龙, 王春锐, 陈飞, 王挺峰, 郭劲. 飞秒脉冲激光对硅基多层膜损伤特性[J]. 中国光学(中英文), 2019, 12(2): 371-381. doi: 10.3788/CO.20191202.0371
引用本文: 郑长彬, 邵俊峰, 李雪雷, 王化龙, 王春锐, 陈飞, 王挺峰, 郭劲. 飞秒脉冲激光对硅基多层膜损伤特性[J]. 中国光学(中英文), 2019, 12(2): 371-381. doi: 10.3788/CO.20191202.0371
ZHENG Chang-bin, SHAO Jun-feng, LI Xue-lei, WANG Hua-long, WANG Chun-rui, CHEN Fei, WANG Ting-feng, GUO Jin. Femtosecond pulsed laser induced damage characteristics on Si-based multi-layer film[J]. Chinese Optics, 2019, 12(2): 371-381. doi: 10.3788/CO.20191202.0371
Citation: ZHENG Chang-bin, SHAO Jun-feng, LI Xue-lei, WANG Hua-long, WANG Chun-rui, CHEN Fei, WANG Ting-feng, GUO Jin. Femtosecond pulsed laser induced damage characteristics on Si-based multi-layer film[J]. Chinese Optics, 2019, 12(2): 371-381. doi: 10.3788/CO.20191202.0371

飞秒脉冲激光对硅基多层膜损伤特性

基金项目: 

激光与物质相互作用国家重点实验室自主基金课题 SKLLIM-1502

详细信息
    作者简介:

    郑长彬(1981—),男,黑龙江富锦人,博士,副研究员,2005年于吉林大学获得硕士学位,2011年于哈尔滨工业大学获得博士学位,主要从事激光辐照效应方面的研究。E-mail:zhengchangbin@ciomp.ac.cn

  • 中图分类号: TN249

Femtosecond pulsed laser induced damage characteristics on Si-based multi-layer film

doi: 10.3788/CO.20191202.0371
Funds: 

Fundamental Research Project of Chinese State Key Laboratory of Laser Interaction With Matter SKLLIM-1502

More Information
    Author Bio:

    ZHENG Changbin(1981—), male, Fujin, Heilongjiang, Ph.D., Associate Researcher, B.S. in physics, college of physics, Jilin Univeristy, 2001-2005; Ph.D in optics, deportment of physics, Harbin Institute of Technology, 2005-2011 is mainly engaged in research on the effects of laser irradiation. E-mail:zhengchangbin@ciomp.ac.cn

    Corresponding author: Chang-bin, E-mail:zhengchangbin@ciomp.ac.cnZHENG
  • 摘要: 为了明确超快激光损伤典型成像探测器膜层结构的物理机制,对飞秒脉冲激光辐照硅基多层膜的损伤特性,以及各种损伤效应对应的激光能量通量范围和阈值条件进行研究。利用波长为800 nm、脉冲宽度为100 fs的脉冲激光和金相显微镜研究了硅基多层膜在不同激光能量通量和不同脉冲累积下的损伤效应。在能量通量为1.01~24.7 J/cm2的激光单脉冲辐照下,激光作用区域可观察到氧化/无定形化、非热烧蚀和激光诱导等离子体烧蚀所引起的表面损伤,其损伤效应与激光能量通量有明显联系,激光作用区域尺寸随能量通量线性增大。在2.42 J/cm2到24.7 J/cm2激光能量通量范围内,可在辐照表面观察到激光诱导压力导致的多层损伤,损伤概率随激光能量通量的增加由1%增大到51%。在激光能量通量为1.01 J/cm2的连续多脉冲辐照下,烧蚀区域尺寸几乎不变,但烧蚀深度逐渐增加,其多层损伤机制为表面损伤的累积效应。通过单脉冲损伤实验数据拟合计算确定,飞秒激光诱导硅基多层膜表面损伤阈值为0.543 J/cm2,应力多层损伤阈值为2.16 J/cm2。低激光能量通量(≤ 1.01 J/cm2)多脉冲辐照累积作用同样可造成硅基多层膜深层损伤。

     

  • 图 1  硅基多层膜结构示意图

    Figure 1.  Sketch of structure for Si-based multi-layer film

    图 2  飞秒激光诱导损伤的实验装置示意图,图中包括格兰棱镜(G)、半波片(HWP)、分束镜(BS)、功率计(PM)、离轴抛面反射镜(L)、平移台(TS)和样品(S)

    Figure 2.  Schematic of femtosecond laser-induced damage experiment setup, including a Glan prism(G), a half wave plate(HWP), a beam splitting mirror(BS), a power meter(PM), an off-axis parabolic mirror(L), a translation stage(TS) and a sample(S)

    图 3  能量密度为(a)1.34 J/cm2和(b)11.6J/cm2的单脉冲激光辐照硅基多层膜显微图

    Figure 3.  Micrograph of Si-base multi-layer film irradiated by femtosecond single-pulse laser with energy densities of (a)1.34 J/cm2 and (b)11.6 J/cm2

    图 4  烧蚀区域尺寸随脉冲能量的变化规律

    Figure 4.  Laser ablated zone sizes vary with pulse fluence

    图 5  不同激光能量通量下应力损伤效果图

    Figure 5.  Stress-induced damage at different pulse fluences

    图 6  应力损伤概率随激光能量通量的变化规律

    Figure 6.  Stress-induced damage probability varies with pulse fluence

    图 7  低激光能量通量(1.01 J/cm2)连续烧蚀效果图像

    Figure 7.  Images of damage from continuous pulse ablation with fluence of 1.01 J/cm2

  • [1] FEDOSEJEVS R, KIRKWOOD S E, HOLENSTEIN R. Femtosecond interaction processes near threshold:damage and ablation[J]. Proceedings of SPIE, 2007, 6403:640302. http://d.old.wanfangdata.com.cn/NSTLQK/NSTL_QKJJ0228082377/
    [2] CRAWFORD T H R, YAMANAKA J, BOTTON C A. High-resolution observations of an amorphous layer and subsurface damage formed by femtosecond laser irradiation of silicon[J]. Journal of Applied Physics, 2008, 103(5):053104. doi: 10.1063/1.2885111
    [3] RUBLACK T, HARTNAUER S, MERGNER M. Mechanism of selective removal of transparent layers on semiconductors using ultrashort laser pulses[J]. Proceedings of SPIE, 2012, 8247:82470Z. doi: 10.1117/12.905741
    [4] 王涛涛, 付跃刚, 汤伟, 等.单CCD彩色相机激光干扰模型及外场干扰实验[J].发光学报, 2015, 36(5):588-594. http://d.old.wanfangdata.com.cn/Periodical/fgxb201505018

    WANG T T, FU Y G, TANG W, et al.. Laser jamming model and out-field laser jamming experiment of single CCD colour imaging system[J]. Chinese Journal of Luminescence, 2015, 36(5):588-594.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/fgxb201505018
    [5] BONSE J, BAUDACH S, KRVGER J, et al.. Femtosecond laser ablation of silicon modification thresholds and morphology[J]. Applied Physics A, 2002, 74(1):19-25. doi: 10.1007/s003390100893
    [6] JIA J, LI M, THOMPSON C V. Amorphization of silicon by femtosecond laser pulses[J]. Applied Physics Letters, 2004, 84(16):3025. doi: 10.1063/1.1699448
    [7] AMER M S, EL-ASHRY M A, DOSSER L R, et al.. Femtosecond versus nanosecond laser machining: comparison of induced stresses and structural changes in silicon wafers[J]. Applied Surface Science, 2005, 242(1-2):162-167. doi: 10.1016/j.apsusc.2004.08.029
    [8] 郭春凤, 于继平, 王德飞, 等.超短脉冲激光辐照硅膜的热弹性[J].强激光与粒子束, 2008, 20(6):907-911. http://d.old.wanfangdata.com.cn/Periodical/qjgylzs200806007

    GUO CH F, YU J P, WANG D F, et al.. Thermoelasticity effect on Si film irradiated by ultra-short pulse laser[J]. High Power Laser and Particle Beams, 2008, 20(6):907-911.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/qjgylzs200806007
    [9] CRAWFORD T H R, YAMANAKA J, HSU E M. Femtosecond laser irradiation of metal and thermal oxide layers on silicon: studies utilising cross-sectional transmission electron microscopy[J]. Applied Physics A, 2008, 91(3):473-478. doi: 10.1007/s00339-008-4433-2
    [10] 杨宏道, 李晓红, 李国强, 等.不同气体环境下532 nm激光诱导硅表面形貌的研究[J].中国光学, 2011, 4(1):86-92. doi: 10.3969/j.issn.2095-1531.2011.01.014

    YANG H D, LI X H, LI G Q, et al.. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres[J]. Chinese Optics, 2011, 4(1):86-92.(in Chinese) doi: 10.3969/j.issn.2095-1531.2011.01.014
    [11] 马鹏飞, 王克栋, 常方高, 等.不同能量密度的飞秒激光辐照对单晶硅的影响研究[J].人工晶体学报, 2013, 42(2):273-277. doi: 10.3969/j.issn.1000-985X.2013.02.016

    MA P F, WANG K D, CHANG F G, et al.. Effects of the irradiation on silicon by femtosecond laser of various energy densities[J]. Journal of Synthetic Crystals, 2013, 42(2):273-277.(in Chinese) doi: 10.3969/j.issn.1000-985X.2013.02.016
    [12] 齐立涛.真空条件下不同波长固体激光烧蚀单晶硅的实验研究[J].中国光学, 2014, 7(3):442-448. http://www.chineseoptics.net.cn/CN/abstract/abstract9156.shtml

    QI L T. Different wavelength solid-state laser ablation of silicon wafer in vacuum[J]. Chinese Optics, 2014, 7(3):442-448.(in Chinese) http://www.chineseoptics.net.cn/CN/abstract/abstract9156.shtml
    [13] 邵俊峰, 郭劲, 王挺峰.飞秒激光与硅的相互作用过程理论研究[J].红外与激光工程, 2014, 43(8):2419-2424. doi: 10.3969/j.issn.1007-2276.2014.08.005

    SHAO J F, GUO J, WANG T F. Theoretical research on dynamics of femto-second laser ablation crystal silicon[J]. Infrared and Laser Engineering, 2014, 43(8):2419-2424.(in Chinese) doi: 10.3969/j.issn.1007-2276.2014.08.005
    [14] 张震, 周孟莲, 张检民, 等.CCD中的激光光斑阴影现象及机理[J].光学 精密工程, 2013, 21(5):1365-1371. http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201305037

    ZHANG ZH, ZHOU M L, ZHANG J M, et al.. Shadows of laser spots in CCD and their mechanism[J]. Opt. Precision Eng., 2013, 21(5):1365-1371.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201305037
    [15] 邵俊峰, 刘阳, 王挺峰, 等.皮秒激光对电荷耦合器件多脉冲损伤效应研究[J].兵工学报, 2014, 35(9):1408-1413. doi: 10.3969/j.issn.1000-1093.2014.09.012

    SHAO J F, LIU Y, WANG T F, et al.. Damage effect of charged coupled device with multiple-pulse picosecond laser[J]. Acta Armamentarii, 2014, 35(9):1408-1413.(in Chinese) doi: 10.3969/j.issn.1000-1093.2014.09.012
    [16] 王明, 王挺峰, 邵俊峰.面阵CCD相机的飞秒激光损伤分析[J].中国光学, 2013, 6(1):96-102. http://www.chineseoptics.net.cn/CN/abstract/abstract8846.shtml

    WANG M, WANG T F, SHAO J F. Analysis of femtosecond laser induced damage to array CCD camera[J]. Chinese Optics, 2013, 6(1):96-102.(in Chinese) http://www.chineseoptics.net.cn/CN/abstract/abstract8846.shtml
    [17] 张健, 林广平, 张睿, 等.准分子激光相位掩模法制备大晶粒尺寸多晶硅薄膜[J].光学 精密工程, 2012, 20(1):58-63. http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201201009

    ZHANG J, LIN G P, ZHANG R, et al.. Fabrication of large grain size p-Si film by phase modulated excimer laser crystallization[J]. Opt. Precision Eng., 2012, 20(1):58-63.(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/gxjmgc201201009
    [18] 冯爱新, 庄绪华, 薛伟, 等.1064 nm、532 nm、355 nm波长脉冲激光辐照多晶硅损伤特性研究[J].红外与激光工程, 2015, 44(2):461-465. doi: 10.3969/j.issn.1007-2276.2015.02.011

    FENG A X, ZHUANG X H, XUE W, et al.. Damage characteristics of polysilicon under wavelengths of 1064 nm, 532 nm and 355 nm laser irradiation[J]. Infrared and Laser Engineering, 2015, 44(2):461-465.(in Chinese) doi: 10.3969/j.issn.1007-2276.2015.02.011
    [19] 韩振春, 薛伟, 冯爱新, 等.不同波长的纳秒脉冲激光对多晶硅损伤特性研究[J].应用激光, 2013, 33(3):313-317. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=yyjg201303019

    HAN ZH CH, XUE W, FENG A X, et al.. A Different wavelength of nanosecond pulse laser damage characteristics of polycrystalline silicon research[J]. Applied Laser, 2013, 33(3):13-317.(in Chinese) http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=yyjg201303019
    [20] 孙承伟, 陆启生, 范正修, 等.激光辐照效应[M].北京:国防工业出版社, 2002.

    SUN CH W, LU Q SH, FAN ZH X, et al.. Laser Irradiation Effect[M]. Beijing:National Defense Industry Press, 2002.(in Chinese)
    [21] 徐斌, 伍晓宇, 罗烽, 等.0Cr18Ni9不锈钢箔的飞秒激光烧蚀[J].光学 精密工程, 2012, 20(1):45-51. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=gxjmgc201201007

    XU B, WU X Y, LUO F, et al.. Ablation of 0Cr18Ni9 stainless steel films by femtosecond laser[J]. Opt. Precision Eng., 2012, 20(1):45-51.(in Chinese) http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=gxjmgc201201007
  • 加载中
图(7)
计量
  • 文章访问数:  2610
  • HTML全文浏览量:  1087
  • PDF下载量:  235
  • 被引次数: 0
出版历程
  • 收稿日期:  2018-01-23
  • 修回日期:  2018-03-20
  • 刊出日期:  2019-04-01

目录

    /

    返回文章
    返回

    重要通知

    2024年2月16日科睿唯安通过Blog宣布,2024年将要发布的JCR2023中,229个自然科学和社会科学学科将SCI/SSCI和ESCI期刊一起进行排名!《中国光学(中英文)》作为ESCI期刊将与全球SCI期刊共同排名!