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Optical properties and application of GaSe∶AgGaSe2 crystal

古新安,  朱韦臻,  罗志伟,  ANGELUTS A A,  EVDOKIMOV M G,  NAZAROV M M,  SHKURINOV A P,  ANDREEV Y M,  LANSKII G V,  SHAIDUKO A V,  KOKH K A,  SVETLICHNYI V A

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文章导航 > 中国光学（中英文）  > 2012 >  5(1): 57-63.
古新安, 朱韦臻, 罗志伟, ANGELUTS A A, EVDOKIMOV M G, NAZAROV M M, SHKURINOV A P, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, KOKH K A, SVETLICHNYI V A. Optical properties and application of GaSe∶AgGaSe2 crystal[J]. 中国光学（中英文）, 2012, 5(1): 57-63. doi: 10.3788/CO.20120501.0057
引用本文: 古新安, 朱韦臻, 罗志伟, ANGELUTS A A, EVDOKIMOV M G, NAZAROV M M, SHKURINOV A P, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, KOKH K A, SVETLICHNYI V A. Optical properties and application of GaSe∶AgGaSe2 crystal[J]. 中国光学（中英文）, 2012, 5(1): 57-63. doi: 10.3788/CO.20120501.0057
shu
KU Shin-an, ZHU Wei-chen, LUO Chih-wei, ANGELUTS A A, EVDOKIMOV M G, NAZAROV M M, SHKURINOV A P, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, KOKH K A, SVETLICHNYI V A. Optical properties and application of GaSe∶AgGaSe2 crystal[J]. Chinese Optics, 2012, 5(1): 57-63. doi: 10.3788/CO.20120501.0057
Citation: KU Shin-an, ZHU Wei-chen, LUO Chih-wei, ANGELUTS A A, EVDOKIMOV M G, NAZAROV M M, SHKURINOV A P, ANDREEV Y M, LANSKII G V, SHAIDUKO A V, KOKH K A, SVETLICHNYI V A. Optical properties and application of GaSe∶AgGaSe2 crystal[J]. Chinese Optics, 2012, 5(1): 57-63. doi: 10.3788/CO.20120501.0057
shu

Optical properties and application of GaSe∶AgGaSe2 crystal

doi: 10.3788/CO.20120501.0057
  • 1.

    国立交通大学, 新竹 30010, 中国台湾;

  • 2.

    莫斯科国立大学, 莫斯科 119991, 俄罗斯;

  • 3.

    俄罗斯科学院 西伯利亚分院 气候与生态系统监测研究所, 托木斯克 634055, 俄罗斯;

  • 4.

    俄罗斯科学院 西伯利亚分院 矿物学和地质学研究所, 新西伯利亚 630090, 俄罗斯;

  • 5.

    俄罗斯托木斯克洲立大学 西伯利亚物理技术研究所, 托木斯克 634050, 俄罗斯;

  • 6.

    中国科学院 长春光学精密机械与物理研究所, 吉林 长春 130033

基金项目: 

Supported by RFBR Project(No.10-02-01452-a), Presidium SB RAS under the Project VII.63.3.1 of VII.63.3 Prog., and Integrated Projec of 2012-2014 and Join Proj. between Presidium SB RAS and Presidium NAS, Belarus No.10 of 2010.

详细信息

  • 中图分类号: O734; TN304.2

Optical properties and application of GaSe∶AgGaSe2 crystal

  • 1.

    National Chiao Tung University, Hsinchu 30010, Taiwan, China;

  • 2.

    Moscow State University, Moscow 119991, Russia;

  • 3.

    Institute of Monitoring of Climatic and Ecological System SB RAS, Tomsk 634055, Russia;

  • 4.

    Institute of Mineralogy and Geology SB RAS, Novosibirsk 630090, Russia;

  • 5.

    Siberian Physics-Technical Institute of TSU, Tomsk 634050, Russia;

  • 6.

    Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Funds: 

Supported by RFBR Project(No.10-02-01452-a), Presidium SB RAS under the Project VII.63.3.1 of VII.63.3 Prog., and Integrated Projec of 2012-2014 and Join Proj. between Presidium SB RAS and Presidium NAS, Belarus No.10 of 2010.

More Information
    Author Bio:

    KU Shin-an(1985-), M. Sc., Post-graduate student, National Chiao Tung University, Taiwan, China. His research interests include nonlinear optics and THz spectroscopy. E-mail:ksa7471@hotmail.com

    摘要
  • 摘要: 从GaSe∶AgGaSe2熔体(质量掺杂浓度为10%)中生长的非线性光学晶体-GaSe∶Ag晶体(质量掺杂浓度0.04%)是一种非中心对称晶体,可用于相位匹配频率转换。Ag的掺入使GaSe晶体的显微硬度提高了30%,从而使其可以在任意方向上进行切割和抛光。本文研究了GaSe∶AgGaSe2晶体在可见、中红外及太赫兹波段的光学性能。实验证明:GaSe∶AgGaSe2晶体的吸收系数是纯GaSe晶体的2倍,其CO2激光倍频效率是ZnGeP2晶体的1.7倍。

     

    Abstract: The nonlinear optical crystal grown from the melt GaSe∶AgGaSe2(10%, mass percent) is identified as acentrosymmetric -GaSe∶Ag(0.04%, mass percent) and is used for phase matched frequency conversion. The silver presence results in 30% increase in microhardness, which allows the crystal to be cut and polished at arbitrary direction. The optical properties from visible to mid-IR and further THz ranges are studied in detail. It demonstrates that the absorption coefficient of GaSe∶Ag(0.04%, mass percent) crystal is twice that of a pure GeSe, and the CO2 laser Second Harmonic Generation(SHG) efficiency is about 1.7 times that of ZnGeP2 crystal.

     

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    • 参考文献(1)
  • [1] ALLAKHVERDIEV K R,GULIEV R I,SALAEV E Y,et al.. Investigation of linear and nonlinear optical properties of GaSxSe1-x crystals[J]. Sov. J. Quantum Electron.,1982,12:947-948. [2] SUHRE D R,SINGH N B,BALAKRISHNA V,et al.. Improved crystal quality and harmonic generation in GaSe doped with indium[J]. Opt. Lett.,1997,22:775-777. [3] FENG Z S,KANG Z H,WU F G,et al.. SHG in doped GaSe:In crystals[J]. Opt. Express,2008,16:9978-9985. [4] HSU Y K,CHEN C W,HUANG J Y,et al.. Erbium doped GaSe crystal for mid-IR applications[J]. Opt. Express,2006,14:5484-5491. [5] ZHANG H Z,KANG Z H,JIANG Y,et al.. SHG phase matching in GaSe and mixed GaSe1-xSx,x≤0.412, crystals at room temperature[J]. Opt. Express,2008,16:9951-9957. [6] SINGH N B,SUHRE D R,ROSCH W,et al.. Modified GaSe crystals for mid-IR applications[J]. J. Cryst. Growth,1999,198:588-592. [7] ZHANG Y F,WANG R,KANG Z H,et al.. AgGaS2- and Al-doped GaSe crystals for IR applications[J]. Opt. Commun.,2011,284:1677-1681. [8] DAS S,GHOSH C,VOEVODINA O G,et al.. Modified GaSe crystal as a parametric frequency converter[J]. Appl. Phys. B,2006,82:43-46. [9] ANDREEV Y M,ATUCHIN V V,LANSKII G V,et al.. Growth, real structure and applications of GaSe1-xSx crystals[J]. Mat. Sci. Eng. B,2006,128:205-210. [10] WANG T J,GAO J C,ANDREEV Y M,et al.. GaSe1-xSx solid solutions[J]. Rus. Phys. J.,2007,50:560-565. [11] QU Y,KANG Z H,WANG T J,et al.. GaSe1-xSx second harmonic generators for CO2 lidars[J]. Atmos. Oceanic Opt.,2008,21:146-151. [12] KU S A,LUO C W,LIO H L,et al.. Optical properties of nonlinear solid solution GaSe1-xSx(0<x≤0.4) crystals[J]. Rus. Phys. J.,2008,51:1083-1089. [13] MAYER G V,KOPYLOVA T N,ANDREEV Y M,et al.. Parametrical conversion of the frequency of organic lasers into the middle-IR range of the spectrum[J]. Rus. Phys. J.,2009,52:640-645. [14] CHU L L,ZHANG I F,KANG Z H,et al.. Phase matching for the second harmonic generation in GaSe crystals[J]. Rus. Phys. J.,2011,53:1235-1242. [15] SARKISOV S Y,NAZAROV M M,SHKURINOV A P,et al.. GaSe1-xSx and GaSe1-xTex solid solutions for terahertz generation and detection[C]//Proc. of the 34th Int. Conf. IRMMW-THz-2009,Busan,Korea,2009,paper M1A02.0370. [16] KOKH K A,ANDREEV Y M,SVETLICHNYI V A,et al.. Growth of GaSe and GaS single crystals[J]. Cryst. Res. Technol.,2011,46:327-330. [17] ZHANG L M,GUO J,LI D J,et al.. Dispersion properties of GaSe1-xSx in the terahertz range[J]. J. Appl. Spectr.,2011,77:850-856. [18] ANDREEV Y M,KOKH K A,LANSKII G V,et al.. Structural characterization of pure and doped GaSe by nonlinear optical method[J]. J. Cryst. Growth,2011,318:1164-1166. [19] ANDREEV Y M,KOKH K A,LANSKII G V. Handbook for Nonlinear Optical Crystals[M]. 3rd ed. Berlin:Springer,1999.
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出版历程
  • 收稿日期:  2011-07-11
  • 修回日期:  2011-10-13
  • 刊出日期:  2012-02-10

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