Volume 4 Issue 1
Feb.  2011
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YANG Hong-dao, LI Xiao-hong, LI Guo-qiang, YUAN Chun-hua, QIU Rong. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres[J]. Chinese Optics, 2011, 4(1): 86-92.
Citation: YANG Hong-dao, LI Xiao-hong, LI Guo-qiang, YUAN Chun-hua, QIU Rong. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres[J]. Chinese Optics, 2011, 4(1): 86-92.

Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres

  • Received Date: 2010-08-11
  • Rev Recd Date: 2010-10-13
  • Publish Date: 2011-02-25
  • The micro-structures of single crystal silicon surfaces produced by the cumulative radiation from 532 nm Nd∶ YAG nanosecond laser pulses were investigated under different ambient atmospheres. The results show that the ambient atmospheres have an important role on the silicon surface morphology. The microstructures produced in vacuum, N2 or SF6 were analyzed in detail, it was indicated that the density of the spikes formed in SF6 is larger than those formed in N2 or vacuum, and the spikes have higher aspect ratios than those in other ambient atmospheres. Furthermore, the dimensions of the microstructures formed in N2, vacuum or SF6 have decreased in turn. The experimental results suggest that the efficiency of laser-induced chemical etching in SF6 atmosphere is higher than those in vacuum or N2 atmospheres. Moreover, there are ripple microstructures formed on the edge of irradiation area, which is caused by the frozing of capillary waves.
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