Volume 4 Issue 1
Feb.  2011
Turn off MathJax
Article Contents
YANG Hong-dao, LI Xiao-hong, LI Guo-qiang, YUAN Chun-hua, QIU Rong. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres[J]. Chinese Optics, 2011, 4(1): 86-92.
Citation: YANG Hong-dao, LI Xiao-hong, LI Guo-qiang, YUAN Chun-hua, QIU Rong. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres[J]. Chinese Optics, 2011, 4(1): 86-92.

Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres

  • Received Date: 11 Aug 2010
  • Rev Recd Date: 13 Oct 2010
  • Publish Date: 25 Feb 2011
  • The micro-structures of single crystal silicon surfaces produced by the cumulative radiation from 532 nm Nd∶ YAG nanosecond laser pulses were investigated under different ambient atmospheres. The results show that the ambient atmospheres have an important role on the silicon surface morphology. The microstructures produced in vacuum, N2 or SF6 were analyzed in detail, it was indicated that the density of the spikes formed in SF6 is larger than those formed in N2 or vacuum, and the spikes have higher aspect ratios than those in other ambient atmospheres. Furthermore, the dimensions of the microstructures formed in N2, vacuum or SF6 have decreased in turn. The experimental results suggest that the efficiency of laser-induced chemical etching in SF6 atmosphere is higher than those in vacuum or N2 atmospheres. Moreover, there are ripple microstructures formed on the edge of irradiation area, which is caused by the frozing of capillary waves.


  • loading
  • [1] BIRNBAUM M. Semiconductor surface damage produced by ruby lasers[J]. J. Appl. Phys.,1965,36:3688-3689. [2] van DRIEL H M,SIPE J E,YOUNG J F. Laser-induced periodic surface structure on solids:a universal phenonmenon[J]. Phys. Rev. Lett.,1982,49(26):1955-1958. [3] CRAWFORD T H R,HAUGEN H K. Sub-wavelength surface structures on silicon irradiated by femtosecond laser pulses at 1300 and 2100 nm wavelengths[J]. Appl. Surf. Sci.,2007,253:4970-4977. [4] YOUNG J F,PRESTON J S,van DRIEL H M,et al.. Laser-induced periodic surface structure. II. experiments on Ge, Si, Al, and brass[J]. Phys. Rev. B,1983,27(2):1155-1172. [5] YONG J E,SIPE J E,van DRIEL H M. Laser-induced periodic surface structure. III. Fluence regimes,the role of feedback,and details of the induced topography in germanium[J]. Phys. Rev. B,1984,30(4):2001-2015. [6] 戴玉堂,徐刚,崔健磊, 等 .GaN基半导体材料的157 nm激光微刻蚀[J]. 中国激光 ,2009,36(12):3138-3142. DAI Y T,XU G,CUI J L,et al.. Micro etching of GaN-based semiconductor materials using 157 nm laser[J]. Chinese J. Lasers,2009,36(12):3138-3142.(in Chinese) [7] 石岩,张宏,徐春鹰.铜基粉末冶金摩擦材料激光表面改性处理[J]. 中国激光 ,2009,36(5):1246-1250. SHI Y,ZHANG H,XU CH Y. Laser surface modification of copper-based powder metallurgy friction materials[J]. Chinese J. Lasers,2009,36(5):1246-1250.(in Chinese) [8] 虞钢,王恒海,何秀丽.具有特定光强分布的激光表面硬化技术[J]. 中国激光 ,2009,36(2):480-486. YU G,WANG H H,HE X L. Laser surface hardening using determined intensity distribution[J]. Chinese J. Lasers,2009,36(2):1688-1691.(in Chinese) [9] HER T H,FINLAY R J,WU C,et al.. Microstructuring of silicon with femtosecond laser pulses[J]. Appl. Phys. Lett.,1998,73(12):1673-1675. [10] YOUNKIN R,CAREY J E,MAZUR E,et al.. Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses[J]. J. Appl. Phys.,2003,93 (5):2626-2629. [11] 李平,王 煜,冯国进, 等 . 超短激光脉冲对硅表面微构造的研究[J]. 中国激光 ,2006,33(12):1688-1691. LI P,WANG Y,FENG G J,et al.. Study of silicon micro-structuring using ultra-short laser pulses[J]. Chinese J. Lasers,2006,33(12):1688-1691.(in Chinese) [12] CROUCH C H,CAREY J E,SHEN M,et al.. Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation[J]. Appl. Phys. A,2004,79:1635-1641. [13] KARABUTOV A V,SHAFEEV G A,BADI N,et al.. 3D periodic structures grown on silicon by radiation of a pulsed Nd∶ YAG laser and their field emission properties[J]. Appl. Surf. Sci.,2006,252:4453-4456. [14] CROUCH C H,CAREY J E,WARRENDER J M,et al.. Comparison of structure and properties of femtosecond and nanosecond laser structured silicon[J]. Appl. Phys. Lett.,2004,84(11):1850-1852. [15] JIMNEZ-JARQUN J,HARO-PONIATOWSKI E,FERNNADEZ-GUASTI M,et al.. Laser induced micro-structuring of silicon under different atmospheres[J]. Radiat Eff. Defects Solids,2009,164(7-8):443-451. [16] PEDRAZA A J,FOWLKES J D,LOWNDES D H. Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiation[J]. Appl. Phys. Lett.,1999,74(16):2322-2324. [17] CHUANG T J. Multiple photo excited SF6 interaction with silicon surfaces[J]. J. Chem. Phys.,1981,74 (2):1453-1460. [18] SAJAD B,PARVIN P,BASSAM M. SF6 decomposition and layer formation due to excimer laser photoablation of SiO2 surface at gas-solid system[J]. J. Phys. D:Appl. Phys.,2004,37:3402-3408. [19] LOWNDES D H,FOWLKES J D,PEDRAZA A J. Early stages of pulsed-laser growth of silicon microcolumns and microcones in air and SF6[J]. Appl. Surf. Sci.,2000,154-155:647-658. [20] DOLGAEV S I,LAVRISHEV S V,LYALIN A A,et al.. Formation of conical microstructures upon laser evaporation of solids[J]. Appl. Phys. A,2001,73:177-181. [21] EMEL'YANOV V I,BABAK D V. Defect capture under rapid solidication of the melt induced by the action of femtosecond laser pulses and formation of periodic surface structures on a semiconductor surface[J]. Appl. Phys. A,2002,74:797-805. [22] BLOEMBERGEN N. Fundaments of laser-solid interactions[J]. Conference on Laser Solid Interactions and Laser Processing. AIP Conf. Proc.,New York,1979,50:1-9. [23] JANNITTI E,MALVEZZI A M,TONODELLO G. Analysis of the radiation backscattered from a laser-produced plasma[J]. J. Appl. Phys.,1975,46 (7):3096-3101.
  • 加载中


    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索
    Article views(7534) PDF downloads(1584) Cited by()
    Proportional views


    DownLoad:  Full-Size Img  PowerPoint