Volume 1 Issue 1
Dec.  2008
Turn off MathJax
Article Contents

GONG Yan, ZHANG Wei. Present status and progress in 193 nm exposure[J]. Chinese Optics, 2008, 1(1): 25-35.
Citation: GONG Yan, ZHANG Wei. Present status and progress in 193 nm exposure[J]. Chinese Optics, 2008, 1(1): 25-35.

Present status and progress in 193 nm exposure

  • Received Date: 2008-04-20
  • Rev Recd Date: 2008-07-14
  • Publish Date: 2008-12-01
  • Lithographic exposure is the key process in the manufacture of integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. In this paper, the present status and progress in 193 nm exposure system are described. The resolution enhancement technologies widely used in 193 nm lithography, such as offaxis illumination, phase shifting mask and optical proximity correction, are also introduced. By showing the composition and key technologies of the exposure system, the challenges in development of lithography instrument are discussed.
  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Article views(4744) PDF downloads(4555) Cited by()

Proportional views

Present status and progress in 193 nm exposure

Abstract: Lithographic exposure is the key process in the manufacture of integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. In this paper, the present status and progress in 193 nm exposure system are described. The resolution enhancement technologies widely used in 193 nm lithography, such as offaxis illumination, phase shifting mask and optical proximity correction, are also introduced. By showing the composition and key technologies of the exposure system, the challenges in development of lithography instrument are discussed.

GONG Yan, ZHANG Wei. Present status and progress in 193 nm exposure[J]. Chinese Optics, 2008, 1(1): 25-35.
Citation: GONG Yan, ZHANG Wei. Present status and progress in 193 nm exposure[J]. Chinese Optics, 2008, 1(1): 25-35.

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return