Volume 11 Issue 4
Jul.  2018
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QIU Bo-cang, MARTIN Hai HU, WANG Wei-min, LIU Wen-bin, BAI Xue. Design and fabrication of 12 W high power and high reliability 915 nm semiconductor lasers[J]. Chinese Optics, 2018, 11(4): 590-603. doi: 10.3788/CO.20181104.0590
Citation: QIU Bo-cang, MARTIN Hai HU, WANG Wei-min, LIU Wen-bin, BAI Xue. Design and fabrication of 12 W high power and high reliability 915 nm semiconductor lasers[J]. Chinese Optics, 2018, 11(4): 590-603. doi: 10.3788/CO.20181104.0590

Design and fabrication of 12 W high power and high reliability 915 nm semiconductor lasers

doi: 10.3788/CO.20181104.0590
Funds:

National High Technology Research and Development Program of China 2015AA016901

Innovative R & D Team Leadership of Guangdong Province Program 2011D040

Shenzhen City Peacock Program KQTD201106

More Information
  • Author Bio:

    QIU Bo-cang(1962—) received his bachelor's degree in engineering from Xi′an Jiaotong University in 1983, a master′s degree in engineering from Beijing Institute of Technology in 1986, and a doctor's degree from Glasgow University in England in 1998.He is currently a design expert for the Institute of High-end Semiconductor Laser Research of Shenzhen Tsinghua University and the design director of Shenzhen Raybow Optoelectronics Co., Ltd.He is mainly engaged in the research of semiconductor lasers.Dr.Qiu specializes in semiconductor optoelectronic devices, especially in semiconductor laser processes and designs.He has published 110 academic papers in the industry's top journals and academic conferences and applied for 14 invention patents. E-mail:qiubocang@raybowlaser.com

    BAI Xue(1987—) received her bachelor's degree from Henan University of Technology in 2009 and a master′s degree from Henan University of Technology in 2012.She is currently a project engineer at Shenzhen Raybow Optoelectronics Co., Ltd.and is mainly engaged in the research of semiconductor lasers.E-mail:baixue@raybowlaser.com

  • Corresponding author: QIU Bo-cang, E-mail:qiubocang@raybowlaser.com
  • Received Date: 2017-12-25
  • Rev Recd Date: 2018-02-12
  • Publish Date: 2018-08-01
  • In this paper, a high efficiency and high reliability 915 nm semiconductor laser is designed and fabricated, which is a key component of the fiber lasers. In order to maximize the electro-optic conversion efficiency of the device, a double asymmetric large-cavity waveguide structure is adopted in the design, and the quantum well structure, waveguide structure, doping, and device structure are systematically optimized. Device simulations show that the device's maximum electro-optical conversion efficiency reaches 67% at an ambient temperature of 25℃. The material is grown by Metal Organic Chemical Vapor Deposition(MOCVD), and a laser chip having a light emitting region width of 95 μm and a cavity length of 4.8 mm is prepared. Tests show that the efficiency of the packaged device and other parameter indices have reached the advanced level of similar devices in the world. In the case that the threshold current is 1 A at room temperature, the slope efficiency is 1.18 W/A, the maximum electro-optic conversion efficiency is 66.5%, the output power is 12 W, and the electro-optical conversion efficiency reaches 64.3%. It can be seen that the test results are in good agreement with that of the device theory simulation. After approximately 6 000 hours of long-life accelerated testing, the device power does not attenuate, indicating that the produced high-power 915 nm laser chip has very high reliability.
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  • [1]
    STILES E. New developments in IPG fiber laser technology[C]. Proceedings of the 5th International Workshop on Fiber Lasers, Dresden, Germany, 2009.
    [2]
    VAISSIE L, STEELE T, RUDY P. High-power diode lasers advance pumping applications[J]. Laser Focus World, 2008, 44(6). https://www.photonicsonline.com/doc/high-power-diode-lasers-advance-pumping-0001
    [3]
    FAIRCLOTH B O. High-brightness high-power fiber coupled diode laser system for material processing and laser pumping[J]. Proceedings of the SPIE, 2003, 4973:34-41. doi: 10.1117/12.478365
    [4]
    王鑫, 赵懿昊, 王翠鸾, 等.110 W高功率高亮度915 nm半导体激光器光纤耦合模块研究[J].发光学报, 2017, 38(12):1654-1660. http://file.bwt-bj.com/9xxnm%20200W%20%e9%ab%98%e5%8a%9f%e7%8e%87%e9%ab%98%e4%ba%ae%e5%ba%a6%e5%8d%8a%e5%af%bc%e4%bd%93%e6%bf%80%e5%85%89%e5%99%a8(3).pdf

    WANG X, ZHAO Y H, WANG C L, et al.. 110 W high power and high brightness 915 nm fiber coupled laser diode module[J]. Chinese Journal of Luminescence, 2017, 38(12):1654-1660.(in Chinese) http://file.bwt-bj.com/9xxnm%20200W%20%e9%ab%98%e5%8a%9f%e7%8e%87%e9%ab%98%e4%ba%ae%e5%ba%a6%e5%8d%8a%e5%af%bc%e4%bd%93%e6%bf%80%e5%85%89%e5%99%a8(3).pdf
    [5]
    王立军, 宁永强, 秦莉, 等.大功率半导体激光器研究进展[J].发光学报, 2015, 36(1):1-19. http://www.cnki.com.cn/Article/CJFDTotal-FGXB201501002.htm

    WANG L J, NING Y Q, QIN L, et al.. Development of high power diode laser[J]. Chinese Journal of Luminescence, 2015, 36(1):1-19.(in Chinese) http://www.cnki.com.cn/Article/CJFDTotal-FGXB201501002.htm
    [6]
    MORITA T, NAGAKURA T, TORⅡ K, et al.. High-efficient and reliable broad-area laser diodes with a window structure[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(4):1502104. doi: 10.1109/JSTQE.2013.2245103
    [7]
    CRUMP P, BLUME G, PASCHKE K, et al.. 20 W continuous wave reliable operation of 980 nm broad-area single emitter diode lasers with an aperture of 96μm[J]. Proceedings of the SPIE, 2009, 7198:719814. doi: 10.1117/12.807263
    [8]
    SCHULTZ C M, CRUMP P, WENZEL H, et al.. 11 W broad area 976 nm DFB laser with 58% power conversion efficiency[J]. Electronics Letters, 2010, 46(8):580-581. http://ieeexplore.ieee.org/abstract/document/5451018
    [9]
    CRUMP P, SCHULTZ C, PIETRZAK A, et al.. 975-nm high-power broad area diode lasers optimized for narrow spectral linewidth applications[J]. Processongs of SPIE, 2010, 7583:75830N-10. doi: 10.1117/12.839570
    [10]
    PETRESCU-PRAHOVA I B, MODAK P, GOUTAIN E, et al.. High d/gamma values in diode laser structures for very high power[J]. Proceedings of the SPIE, 2009, 7198:71981I-8. doi: 10.1117/12.810041
    [11]
    LOYO-MALDONADO V, BACCHIN G, ROBERTSON S, et al.. High reliability operation of 2 kW QCW 10-bar laser diode stacks at 808 nm[J]. Proc. of SPIE, 2009, 7198:71981E-8. doi: 10.1117/12.809321
    [12]
    KNAUER A, ERBERT G, STASKE R, et al.. High-power 808 nm lasers with a super-large optical cavity[J]. Semiconductor Science and Technology, 2005, 20(6):621-624. doi: 10.1088/0268-1242/20/6/024
    [13]
    AVRUTIN E A., RYYKIN B S. Thery and modelling of the power conversion efficiency of large optical cavity laser diodes[C]. 2015 High power diode lasers and systems conference(HPD), IEEE, Coventry, UK, 2015: 9-10.
    [14]
    QIU B C, MCDOUGALL S D, LIU X F, et al.. Design and fabrication of low beam divergence and high kink-free power lasers[J]. IEEE Journal of Quantum Electronics, 2005, 41(9):1124-1130. doi: 10.1109/JQE.2005.853359
    [15]
    TSAI C Y, TSAI CH Y, CHEN C H, et al.. Theoretical model for intravalley and intervalley free-carrier absorption in semiconductor lasers:beyond the classical drude models[J]. IEEE Journal of Quantum Electronics, 1998, 34(3):552-559. doi: 10.1109/3.661466
    [16]
    CHILD G N, BRAND S, ABRAM R A. Intervalence band absorption in semiconductor materials[J]. Semiconductor Science and Technology, 1986, 1:116-120. doi: 10.1088/0268-1242/1/2/004
    [17]
    CHUANG S L. Physics of Optoelectronic Devices[M]. New York:John Wiley & Son Inc, 1995.
    [18]
    王文知, 井红旗, 祁琼, 等.大功率半导体激光器可靠性研究和失效分析[J].发光学报, 2017, 38(2):165-169. http://ir.semi.ac.cn/handle/172111/28126

    WANG W Z, JJING H Q, QI Q, et al.. Reliability test and failure analysis of high power semicounductor laser[J]. Chinese Journal of Luminescence, 2017, 38(2):165-169.(in Chinese) http://ir.semi.ac.cn/handle/172111/28126
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