Volume 10 Issue 2
Apr.  2017
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HAI Yi-na, ZOU Yong-gang, TIAN Kun, MA Xiao-hui, WANG Hai-zhu, FAN Jie, BAI Yun-feng. Research progress of horizontal cavity surface emitting semiconductor lasers[J]. Chinese Optics, 2017, 10(2): 194-206. doi: 10.3788/CO.20171002.0194
Citation: HAI Yi-na, ZOU Yong-gang, TIAN Kun, MA Xiao-hui, WANG Hai-zhu, FAN Jie, BAI Yun-feng. Research progress of horizontal cavity surface emitting semiconductor lasers[J]. Chinese Optics, 2017, 10(2): 194-206. doi: 10.3788/CO.20171002.0194

Research progress of horizontal cavity surface emitting semiconductor lasers

doi: 10.3788/CO.20171002.0194
Funds:

Key Project of S & T Development Plan of Jilin Province of China 20140204028GX

Key Project of S & T Development Plan of Jilin Province of China 20150204068GX

  • Received Date: 20 Oct 2016
  • Rev Recd Date: 29 Nov 2016
  • Publish Date: 01 Apr 2017
  • In recent years, horizontal cavity surface emitting semiconductor lasers have become a hot research topic in the field of lasers due to its excellent properties such as high power, high beam quality, easy packaging, integration and so on. In this paper, we describe several types of horizontal cavity surface emitting semiconductor lasers and their working principle, structure design and features. Then, we summarize and review the present research and development of the proposed lasers at home and abroad, and on this basis, aiming at the research work for horizontal cavity surface-emitting semiconductor lasers and development trends, a further analysis and outlook are given. Currently, the output power of the horizontal cavity surface emitting semiconductor lasers has achieved watts level, and the output power of single transmitter producted by Alfalight company can reach up to 73 W with curved grating. With the expansion of application fields, far infrared band horizontal cavity surface emitting lasers will become focus in the future.

     

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