Volume 6 Issue 4
Aug.  2013
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LIU Zhi, LI Chuan-bo, XUE Chun-lai, CHENG Bu-wen. Progress in Ge/Si heterostructures for light emitters[J]. Chinese Optics, 2013, 6(4): 449-456. doi: 10.3788/CO.20130604.0449
Citation: LIU Zhi, LI Chuan-bo, XUE Chun-lai, CHENG Bu-wen. Progress in Ge/Si heterostructures for light emitters[J]. Chinese Optics, 2013, 6(4): 449-456. doi: 10.3788/CO.20130604.0449

Progress in Ge/Si heterostructures for light emitters

doi: 10.3788/CO.20130604.0449
  • Received Date: 14 Apr 2013
  • Rev Recd Date: 17 Jun 2013
  • Publish Date: 10 Aug 2013
  • Due to the compatibility of Si-based light emitters with Si CMOS processes, Ge/Si heterostructures based light emitters have developed significantly. This paper reviews the most recent progress of this field, including Ge/Si Quantum Dot(QD) Light Emitting Diode(LED), Ge light emitting diode on Si, Ge laser on Si, and Ge/SiGe Multiple Quantum Well(MQW) light emitting diode. It describes the characteristics of these light emitting devices and how to enhance their luminescent properties. Finally, it discusses the challenges and opportunities associated with these approaches and suggests that much innovation should be promoted in material and device structures.

     

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