Volume 17 Issue 3
May  2024
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SHEN Yang, LU Zhi-feng, GUO Ya-kun, LONG Yun-fei, HE Rui, Zhang Zhe-rui. Resistive plasmonic absorbing structures for stability enhancement of broadband absorption[J]. Chinese Optics, 2024, 17(3): 683-692. doi: 10.37188/CO.EN-2023-0022
Citation: SHEN Yang, LU Zhi-feng, GUO Ya-kun, LONG Yun-fei, HE Rui, Zhang Zhe-rui. Resistive plasmonic absorbing structures for stability enhancement of broadband absorption[J]. Chinese Optics, 2024, 17(3): 683-692. doi: 10.37188/CO.EN-2023-0022

Resistive plasmonic absorbing structures for stability enhancement of broadband absorption

doi: 10.37188/CO.EN-2023-0022
Funds:  Supported by National Natural Science Foundation of China (No. 61471388, No. 61801509); National Key R & D Program of China (No. 2017YFA0700201)
More Information
  • Author Bio:

    Shen Yang (1990—), Ph.D., Engineer, Satellite Maritime Tracking and Controlling Department. His research interests concentrate on the basic theory and application of metamaterials in the field of electromagnetic waves, materials engineering, and surface plasmons. E-mail: shenyang508@126.com

  • Corresponding author: shenyang508@126.com
  • Received Date: 02 Sep 2023
  • Rev Recd Date: 07 Oct 2023
  • Accepted Date: 18 Dec 2023
  • Available Online: 28 Dec 2023
  • Broadband absorption performance in resistive metamaterial absorbers (MA) has always been disturbed by its ohmic sheet element. We propose a comprehensive scheme based on integrating resistive MA and plasmonic structure (PS) to enhance the stable absorption performance. Theoretical investigation indicated that the PS can inspire multi-resonance based on dispersion engineering, and that the localized electric field takes effect on the surface of the ohmic sheet accordingly. Simulation and experimental measurement demonstrated that the proposed resistive plasmonic absorbing structures (PAS) can achieve stable and highly efficient absorption within the frequency band from 7.8 to 40.0 GHz with the ohmic sheet ranging from 100 to 250 Ω/sq. In conclusion, the proposed integration of PS and resistive MA provides an efficient pathway to optimize performance for various applications.


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