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梦洁 付, 海亮 董, 志刚 贾, 伟 贾, 建 梁, 并社 许. Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808 nm laser diode[J]. Chinese Optics. doi: 10.37188/CO.2024-0006
Citation: 梦洁 付, 海亮 董, 志刚 贾, 伟 贾, 建 梁, 并社 许. Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808 nm laser diode[J]. Chinese Optics. doi: 10.37188/CO.2024-0006

Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808 nm laser diode

doi: 10.37188/CO.2024-0006
  • Received Date: 27 Feb 2024
  • Rev Recd Date: 03 May 2024
  • Accepted Date: 06 May 2024
  • Available Online: 17 May 2024
  • There is nonradiative recombination in waveguide region owing carrier leakage, which in turn reduces output power and wall-plug efficiency. In this paper, we designed a novel epitaxial structure, which suppresses carrier leakage by inserting n-Ga0.55In0.45P and p-GaAs0.6P0.4 between barriers and waveguide layers, respectively, to modulate the energy band structure and to increase the height of barriers. The results showed that leakage current density reduced by 87.71%, compared to traditional structure. The output power reached 12.80 W with wall-plug efficiency of 78.24% at an injection current density 5 A/cm2 at room temperature. In addition, temperature drift coefficient of center wavelength was 0.206 nm/°C at the temperature range from 5 to 65 °C. The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.

     

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      沈阳化工大学材料科学与工程学院 沈阳 110142

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