Effect of GaInP and GaAsP inserted into waveguide/barrier interface on carrier leakage in InAlGaAs quantum well 808 nm laser diode

There is nonradiative recombination in waveguide region owing carrier leakage, which in turn reduces output power and wall-plug efficiency. In this paper, we designed a novel epitaxial structure, which suppresses carrier leakage by inserting n-Ga0.55In0.45P and p-GaAs0.6P0.4 between barriers and waveguide layers, respectively, to modulate the energy band structure and to increase the height of barriers. The results showed that leakage current density reduced by 87.71%, compared to traditional structure. The output power reached 12.80 W with wall-plug efficiency of 78.24% at an injection current density 5 A/cm2 at room temperature. In addition, temperature drift coefficient of center wavelength was 0.206 nm/°C at the temperature range from 5 to 65 °C. The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.