Volume 16 Issue 6
Nov.  2023
Turn off MathJax
Article Contents
LIU Cui-cui, LIN Nan, MA Xiao-yu, ZHANG Yue-ming, LIU Su-ping. InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions[J]. Chinese Optics, 2023, 16(6): 1512-1523. doi: 10.37188/CO.2022-0257
Citation: LIU Cui-cui, LIN Nan, MA Xiao-yu, ZHANG Yue-ming, LIU Su-ping. InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions[J]. Chinese Optics, 2023, 16(6): 1512-1523. doi: 10.37188/CO.2022-0257

InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions

doi: 10.37188/CO.2022-0257
Funds:  Supported by Key Areas Research and Development Program of Guangdong Province of China (No. 2020B090922003); Young Talents Project of China National Nuclear Corporation (No. 11FY212306000801)
More Information
  • Author Bio:

    Liu Cuicui (1993—), female, from Cangzhou, Hebei Province, Doctor, Associate Researcher, received a Ph.D. degree from the Institute of Semiconductor Research of the Chinese Academy of Sciences in 2020, mainly engaged in research on reliability of semiconductor lasers and semiconductor power devices. E-mail: sissiliu2020@163.com

    Ma Xiaoyu (1963—), male, Ph. D., Researcher, Doctoral Supervisor,received a Master's degree from Jilin University in 1987, mainly engaged in research on optoelectronic device design and epitaxial growth. E-mail: maxy@semi.ac.cn

  • Corresponding author: maxy@semi.ac.cn
  • Received Date: 28 Dec 2022
  • Rev Recd Date: 05 Feb 2023
  • Accepted Date: 21 Sep 2023
  • Available Online: 21 Sep 2023
  • Catastrophic Optical Mirror Damage (COMD) on the cavity surface is the key factor limiting the threshold output power of high-power quantum well semiconductor laser diodes. To improve the output power of the laser diode, the band gap width of the active material in the cavity surface of the semiconductor laser diode can be adjusted by the quantum well intermixing technology to form a non-absorbing window transparent to the output laser. Based on the primary epitaxial wafers of InGaAs/AlGaAs high power quantum well semiconductor laser diode, using the single crystal Si dielectric layer grown by Metal Oxide Chemical Vapor Deposition (MOCVD) as the diffusion source, the research on Si impurity induced quantum well intermixing was carried out by using the Rapid Thermal Annealing (RTA) process. The effects of growth characteristics of Si dielectric layer, the temperature and time of RTA on the intermixing process were investigated. The experimental results show that the epitaxial 50 nm Si dielectric layer at 650 °C combined with 875 °C/90 s RTA treatment can obtain about 57 nm wavelength blue shift while maintaining the photoluminescence spectrum shape and the primary epitaxial wafers. It is found that the diffusion of Si impurities into the waveguide layer on the primary epitaxial wafer is the key to the remarkable effect of quantum well intermixing by the energy spectrum measurement technique.


  • loading
  • [1]
    COOPER D, GOOCH C, SHERWELL R. Internal self-damage of gallium arsenide lasers[J]. IEEE Journal of Quantum Electronics, 1966, 2(8): 329-330. doi: 10.1109/JQE.1966.1074057
    CHINONE N, NAKASHIMA H, ITO R. Long-term degradation of GaAs-Ga1- x Al x As DH lasers due to facet erosion[J]. Journal of Applied Physics, 1977, 48(3): 1160-1162. doi: 10.1063/1.323796
    WANG L J, TONG C ZH, WANG Y J, et al. Recent advances in lateral mode control technology of diode lasers[J]. Chinese Optics, 2022, 15(5): 895-911. (in Chinese). doi: 10.37188/CO.2022-0143
    HEMPEL M, TOMM J W, ZIEGLER M, et al. Catastrophic optical damage at front and rear facets of diode lasers[J]. Applied Physics Letters, 2010, 97(23): 231101. doi: 10.1063/1.3524235
    WANG Y X, ZHU L N, ZHONG L, et al. InGaAs/GaAs(P) quantum well intermixing induced by Si impurity diffusion[J]. Chinese Optics, 2022, 15(3): 426-432. (in Chinese). doi: 10.37188/CO.2021-0200
    LIU C C, LIN N, XIONG C, et al. Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities[J]. Chinese Optics, 2020, 13(1): 203-216. (in Chinese). doi: 10.3788/co.20201301.0203
    WALKER C L, BRYCE A C, MARSH J H. Improved catastrophic optical damage level from laser with nonabsorbing mirrors[J]. IEEE Photonics Technology Letters, 2002, 14(10): 1394-1396. doi: 10.1109/LPT.2002.802080
    WANG X, ZHAO Y H, ZHU L N, et al. Impurity-free vacancy diffusion induces quantum well intermixing in 915 nm semiconductor laser based on SiO2 film[J]. Acta Photonica Sinica, 2018, 47(3): 0314003. (in Chinese). doi: 10.3788/gzxb20184703.0314003
    GE X H, ZHANG R Y, GUO CH Y, et al. Multiple factor ion implantation-induced quantum well intermixing effect[J]. Laser & Optoelectronics Progress, 2020, 57(1): 011409. (in Chinese).
    LIN T, LI Y N, XIE J N, et al. Composition and interface research on quantum well intermixing between a tensile GaInP quantum well and compressed AlGaInP barriers[J]. Journal of Electronic Materials, 2022, 51(8): 4368-4377. doi: 10.1007/s11664-022-09704-6
    LIN T, LI Y N, XIE J N, et al. Quantum well intermixing of tensile strain GaInP quantum well structures induced by ion implantation and thermal annealing[J]. Materials Science in Semiconductor Processing, 2022, 138: 106306. doi: 10.1016/j.mssp.2021.106306
    LAIDIG W D, HOLONYAK JR N, CAMRAS M D, et al. Disorder of an AlAs-GaAs superlattice by impurity diffusion[J]. Applied Physics Letters, 1981, 38(10): 776-778. doi: 10.1063/1.92159
    KALISKI R W, GAVRILOVIC P, MEEHAN K, et al. Photoluminescence and stimulated emission in Si-and Ge-disordered Al x Ga1- x As-GaAs superlattices[J]. Journal of Applied Physics, 1985, 58(1): 101-107. doi: 10.1063/1.335710
    MEI P, YOON H W, VENKATESAN T, et al. Kinetics of silicon-induced mixing of AlAs-GaAs superlattices[J]. Applied Physics Letters, 1987, 50(25): 1823-1825. doi: 10.1063/1.97709
    LIAO M Y, LI W, TANG M CH, et al. Selective area intermixing of III-V quantum-dot lasers grown on silicon with two wavelength lasing emissions[J]. Semiconductor Science and Technology, 2019, 34(8): 085004. doi: 10.1088/1361-6641/ab2c24
    QIU B C, MARTIN H H, WANG W M, et al. Design and fabrication of 12 W high power and high reliability 915 nm semiconductor lasers[J]. Chinese Optics, 2018, 11(4): 590-603. (in Chinese). doi: 10.3788/co.20181104.0590
    LI X, SHA Y Q, JIANG CH W, et al. Fabrication and characterization of ultra-thin GaN-based LED freestanding membrane[J]. Chinese Optics, 2020, 13(4): 873-883. (in Chinese). doi: 10.37188/CO.2019-0192
  • 加载中


    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(9)  / Tables(1)

    Article views(144) PDF downloads(84) Cited by()
    Proportional views


    DownLoad:  Full-Size Img  PowerPoint