| Citation: | LIU Cui-cui, LIN Nan, MA Xiao-yu, ZHANG Yue-ming, LIU Su-ping. InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions[J]. Chinese Optics, 2023, 16(6): 1512-1523. doi: 10.37188/CO.2022-0257
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Catastrophic Optical Mirror Damage (COMD) on the cavity surface is the key factor limiting the threshold output power of high-power quantum well semiconductor laser diodes. To improve the output power of the laser diode, the band gap width of the active material in the cavity surface of the semiconductor laser diode can be adjusted by the quantum well intermixing technology to form a non-absorbing window transparent to the output laser. Based on the primary epitaxial wafers of InGaAs/AlGaAs high power quantum well semiconductor laser diode, using the single crystal Si dielectric layer grown by Metal Oxide Chemical Vapor Deposition (MOCVD) as the diffusion source, the research on Si impurity induced quantum well intermixing was carried out by using the Rapid Thermal Annealing (RTA) process. The effects of growth characteristics of Si dielectric layer, the temperature and time of RTA on the intermixing process were investigated. The experimental results show that the epitaxial 50 nm Si dielectric layer at 650 °C combined with 875 °C/90 s RTA treatment can obtain about 57 nm wavelength blue shift while maintaining the photoluminescence spectrum shape and the primary epitaxial wafers. It is found that the diffusion of Si impurities into the waveguide layer on the primary epitaxial wafer is the key to the remarkable effect of quantum well intermixing by the energy spectrum measurement technique.
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