Volume 16 Issue 6
Nov.  2023
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LIU Cui-cui, LIN Nan, MA Xiao-yu, ZHANG Yue-ming, LIU Su-ping. InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions[J]. Chinese Optics, 2023, 16(6): 1512-1523. doi: 10.37188/CO.2022-0257
Citation: LIU Cui-cui, LIN Nan, MA Xiao-yu, ZHANG Yue-ming, LIU Su-ping. InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions[J]. Chinese Optics, 2023, 16(6): 1512-1523. doi: 10.37188/CO.2022-0257

InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions

doi: 10.37188/CO.2022-0257
Funds:  Supported by Key Areas Research and Development Program of Guangdong Province of China (No. 2020B090922003); Young Talents Project of China National Nuclear Corporation (No. 11FY212306000801)
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  • Author Bio:

    Liu Cuicui (1993—), female, from Cangzhou, Hebei Province, Doctor, Associate Researcher, received a Ph.D. degree from the Institute of Semiconductor Research of the Chinese Academy of Sciences in 2020, mainly engaged in research on reliability of semiconductor lasers and semiconductor power devices. E-mail: sissiliu2020@163.com

    Ma Xiaoyu (1963—), male, Ph. D., Researcher, Doctoral Supervisor,received a Master's degree from Jilin University in 1987, mainly engaged in research on optoelectronic device design and epitaxial growth. E-mail: maxy@semi.ac.cn

  • Corresponding author: maxy@semi.ac.cn
  • Received Date: 28 Dec 2022
  • Rev Recd Date: 05 Feb 2023
  • Accepted Date: 21 Sep 2023
  • Available Online: 21 Sep 2023
  • Catastrophic Optical Mirror Damage (COMD) on the cavity surface is the key factor limiting the threshold output power of high-power quantum well semiconductor laser diodes. To improve the output power of the laser diode, the band gap width of the active material in the cavity surface of the semiconductor laser diode can be adjusted by the quantum well intermixing technology to form a non-absorbing window transparent to the output laser. Based on the primary epitaxial wafers of InGaAs/AlGaAs high power quantum well semiconductor laser diode, using the single crystal Si dielectric layer grown by Metal Oxide Chemical Vapor Deposition (MOCVD) as the diffusion source, the research on Si impurity induced quantum well intermixing was carried out by using the Rapid Thermal Annealing (RTA) process. The effects of growth characteristics of Si dielectric layer, the temperature and time of RTA on the intermixing process were investigated. The experimental results show that the epitaxial 50 nm Si dielectric layer at 650 °C combined with 875 °C/90 s RTA treatment can obtain about 57 nm wavelength blue shift while maintaining the photoluminescence spectrum shape and the primary epitaxial wafers. It is found that the diffusion of Si impurities into the waveguide layer on the primary epitaxial wafer is the key to the remarkable effect of quantum well intermixing by the energy spectrum measurement technique.

     

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