Volume 15 Issue 5
Sep.  2022
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CHEN Xing, ZHOU Chang, LIU Ke-wei, SHEN De-zhen. Review of ultraviolet photodetectors based on micro/nano-structured wide bandgap semiconductor oxide[J]. Chinese Optics, 2022, 15(5): 912-928. doi: 10.37188/CO.2022-0132
Citation: CHEN Xing, ZHOU Chang, LIU Ke-wei, SHEN De-zhen. Review of ultraviolet photodetectors based on micro/nano-structured wide bandgap semiconductor oxide[J]. Chinese Optics, 2022, 15(5): 912-928. doi: 10.37188/CO.2022-0132

Review of ultraviolet photodetectors based on micro/nano-structured wide bandgap semiconductor oxide

doi: 10.37188/CO.2022-0132
Funds:  Supported by the National Natural Science Foundation of China (No. 62074148, No. 61875194, No. 11727902, No. 12074372); the Key Research and Development Program of Changchun City (No. 21ZY05); the 100 Talents Program of the Chinese Academy of Sciences; Youth Innovation Promotion Association, CAS (No. 2020225); Natural Science Foundation of Jilin Province (No. 20210101145JC); XuGuang Talents Plan of CIOMP
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  • Ultraviolet photodetection technology is another dual-use detection technology after infrared detection and laser detection technology, which has broad application prospects. Vacuum photomultiplier tubes and Si-based photodiodes are common commercial UV detectors, but vacuum photomultiplier tubes are susceptible to high temperatures and electromagnetic radiation, and need to work under high pressure while Si-based photodiodes require expensive filters. Wide bandgap semiconductor ultraviolet photodetectors have overcome some of the problems faced by the above two devices, and are becoming the research hotspot. Among them, wide bandgap oxide materials have attracted extensive attention, due to the advantages of easy preparation for high response and high gain devices, and rich micro-structures and nano-structures. In this paper, ultraviolet photodetectors based on micro/nano-structured wide bandgap semiconductor oxide are combed, and some related researches in recent years are reviewed. The oxide materials involved include ZnO, Ga2O3, SnO2 and TiO2, etc. and the device structures involved include metal-semiconductor-metal devices, Schottky junction devices and heterojunction devices, etc.

     

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