Volume 16 Issue 1
Jan.  2023
Turn off MathJax
Article Contents
TAN Man-qing, YOU Dao-ming, GUO Wen-tao, LIU Wei-hua. Research progress of monolithic integration master-oscillation power-amplifiers[J]. Chinese Optics, 2023, 16(1): 61-75. doi: 10.37188/CO.2022-0022
Citation: TAN Man-qing, YOU Dao-ming, GUO Wen-tao, LIU Wei-hua. Research progress of monolithic integration master-oscillation power-amplifiers[J]. Chinese Optics, 2023, 16(1): 61-75. doi: 10.37188/CO.2022-0022

Research progress of monolithic integration master-oscillation power-amplifiers

doi: 10.37188/CO.2022-0022
Funds:  Supported by National Natural Science Foundation of China (No. 61935018); Science and Technology Project of State Grid Corporation of China (No. 5700-202058482A-0-0-00)
More Information
  • Corresponding author: mqtan@semi.ac.cn
  • Received Date: 07 Feb 2022
  • Rev Recd Date: 22 Mar 2022
  • Available Online: 16 May 2022
  • Besides its advantages in volume, power and beam quality, a monolithic integration Master-Oscillation Power-amplifier (MOPA) can also realize a narrower linewidth and dynamic single-mode by integrating Bragg grating. Its application value is high in the fields of frequency doubling, pumping, optical communication and sensing, which makes it a popular research topic in recent years. This paper firstly went over the mainstream structure and characteristics of monolithic integrated MOPA, including a tapered amplifier, ridge amplifier, Bragg grating and three-section MOPA. Based on their working principles and performance characteristics, we introduce the main research directions and the latest development trends in combination with their problems. Aiming at the problem of beam quality degradation at high power in monolithic integrated MOPA, the optimal design of epitaxial layer structure, facet optical film and electrode aspects are then summarized for monolithic integrated MOPAs. After that, we sort out the research progress of MOPAs with different performance characteristics for various application requirements including high power, narrow linewidth, high beam quality and high brightness. Finally, we prospect the development trend of monolithic integrated MOPA.


  • loading
  • [1]
    王立军, 宁永强, 秦莉, 等. 大功率半导体激光器研究进展[J]. 发光学报,2015,36(1):1-19.

    WANG L J, NING Y Q, QIN L, et al. Development of High Power Diode Laser[J]. Chinese Journal of Luminescence, 2015, 36(1): 1-19. (in Chinese)
    LEIDNER J P, MARCIANTE J R. Beam quality improvement in broad-area semiconductor lasers via evanescent spatial filtering[J]. IEEE Journal of Quantum Electronics, 2012, 48(10): 1269-1274. doi: 10.1109/JQE.2012.2207881
    GORDEEV N Y, PAYUSOV A, MAXIMOV M. Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels[J]. Semiconductors, 2019, 53(10): 1405-1408. doi: 10.1134/S1063782619100087
    YUAN M Y, WANG W Q, WANG X Y, et al. Demonstration of an external cavity semiconductor mode-locked laser[J]. Optics Letters, 2021, 46(19): 4855-4858. doi: 10.1364/OL.428794
    KHARAS D, PLANT J J, LOH W, et al. High-power (> 300 mW) on-chip laser with passively aligned silicon-nitride waveguide DBR cavity[J]. IEEE Photonics Journal, 2020, 12(6): 1-12.
    LIU G Y, MI SH Y, YANG K, et al. 161 W middle infrared ZnGeP 2 MOPA system pumped by 300 W-class Ho: YAG MOPA system[J]. Optics Letters, 2021, 46(1): 82-85. doi: 10.1364/OL.413755
    XU Y, SHENG Q, WANG P, et al. 1.5-kW all-fiberized Yb-doped MOPA laser at 1105 nm with near-diffraction-limited beam quality and narrow spectral width[J]. Optics Communications, 2022: 127893.
    OGRODOWSKI L, FRIEDMANN P, GILLY J, et al. Tapered amplifiers for high-power MOPA setups between 750 nm and 2000 nm[J]. Proceedings of SPIE, 2020, 11301: 113011E.
    FIEBIG C, BLUME G, KASPARI C, et al. 12 W high-brightness single-frequency DBR tapered diode laser[J]. Electronics letters, 2008, 44(21): 1253-1255. doi: 10.1049/el:20081371
    PASCHKE K, BUGGE F, BLUME G, et al. High-power diode lasers at 1178 nm with high beam quality and narrow spectra[J]. Optics letters, 2015, 40(1): 100-102. doi: 10.1364/OL.40.000100
    ANDREWS J R. Traveling‐wave amplifier made from a laser diode array[J]. Applied physics letters, 1986, 48(20): 1331-1333. doi: 10.1063/1.96951
    CARLSON N W, ABELES J H, BOUR D P, et al. Demonstration of monolithic, grating-surface-emitting laser master oscillator-cascaded power amplifier array[J]. IEEE Photonics technology letters, 1990, 2(10): 708-710. doi: 10.1109/68.60767
    SAHM A, BAUMGäRTNER S, HOFMANN J, et al. Miniaturized semiconductor MOPA laser source at 772 nm for the generation of UV laser light[J]. Proceedings of SPIE, 2018, 10535: 1053521.
    PASCHKE K, BLUME G, POHL J, et al. Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector[J]. Proceedings of SPIE, 2020, 11262: 112620L.
    BEYATLI E, SUMPF B, ERBERT G, et al. Efficient Tm: YAG and Tm: LuAG lasers pumped by 681 nm tapered diodes[J]. Applied Optics, 2019, 58(11): 2973-2980. doi: 10.1364/AO.58.002973
    HANSEN A K, CHRISTENSEN M, NOORDEGRAAF D, et al. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system[J]. Proceedings of SPIE, 2017, 10088: 1008802.
    LIANG M, LIU Q X, HU W T. 1550nm monolithic MOPA diode laser for Lidar applications[J]. Proceedings of SPIE, 2019, 11182: 1118207.
    BLUME G, JEDRZEJCZYK D, POHL J, et al. 633-nm single-mode master-oscillator power-amplifier module[J]. Proceedings of SPIE, 2018, 10528: 105280D.
    HOLLY C, HENGESBACH S, TRAUB M, et al. Simulation of spectral stabilization of high-power broad-area edge emitting semiconductor lasers[J]. Optics express, 2013, 21(13): 15553-15567. doi: 10.1364/OE.21.015553
    KAUNGA-NYIRENDA S N, BULL S, LIM J J, et al. Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self-heating[J]. IET Optoelectronics, 2014, 8(2): 99-107. doi: 10.1049/iet-opt.2013.0082
    WALPOLE J, KINTZER E, CHINN S, et al. High‐power strained‐layer InGaAs/AlGaAs tapered traveling wave amplifier[J]. Applied physics letters, 1992, 61(7): 740-742. doi: 10.1063/1.107783
    BEIL J A, SHIMOMOTO L, SWERTFEGER R B, et al. Improvements to tapered semiconductor MOPA laser design and testing[J]. Proceedings of SPIE, 2020, 10514: 105140U.
    TIJERO J, BORRUEL L, VILERA M, et al. Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 µm[J]. Proceedings of SPIE, 2020, 10514: 105140U.
    TIJERO J M G, BORRUEL L, VILERA M, et al. Analysis of the performance of tapered semiconductor optical amplifiers: role of the taper angle[J]. Optical and Quantum Electronics, 2015, 47(6): 1437-1442. doi: 10.1007/s11082-014-0108-8
    HUANG SH SH, ZHANG Y, LIAO Y P, et al. High-power single-spatial-mode gasb tapered laser around 2.0 μm with very small lateral beam divergence[J]. Chinese Physics Letters, 2017, 34(8): 084202. doi: 10.1088/0256-307X/34/8/084202
    CHEN ZH H, QU H W, MA X L, et al. High-brightness low-divergence tapered lasers with a narrow taper angle[J]. Chinese Physics Letters, 2019, 36(8): 084201. doi: 10.1088/0256-307X/36/8/084201
    LI J, QIU Y T, CAO Y H, et al. Numerical simulation and experiment of high brightness tapered lasers[J]. Optik, 2018, 158: 502-507. doi: 10.1016/j.ijleo.2017.12.158
    袁庆贺, 井红旗, 刘素平, 等. 导波模式对锥形半导体激光器输出特性的影响[J]. 中国激光,2021,48(9):0901001. doi: 10.3788/CJL202148.0901001

    YUAN Q H, JING H Q, LIU S P, et al. Influence of guided wave mode on output characteristics of tapered diode laser[J]. Chinese Journal of Lasers, 2021, 48(9): 0901001. (in Chinese) doi: 10.3788/CJL202148.0901001
    ZINK C, MAAßDORF A, FRICKE J, et al. Monolithic master oscillator tilted tapered power amplifier emitting 9.5 W at 1060 nm[J]. IEEE Photonics Technology Letters, 2019, 32(1): 59-62.
    曾德圣, 仲莉, 刘素平, 等. 具有线性张角结构和非线性张角结构的锥形激光放大器的分析[J]. 光学学报,2020,40(3):0314002. doi: 10.3788/AOS202040.0314002

    ZENG D SH, ZHONG L, LIU S P, et al. Analysis of Tapered Laser Amplifiers with Linear and Nonlinear Angle-Opening Strucutres[J]. Acta Optica Sinica, 2020, 40(3): 0314002. (in Chinese) doi: 10.3788/AOS202040.0314002
    YEO C I, JANG S J, YU J S, et al. 1.3um Laterally Tapered Ridge Waveguide DFB Lasers With Second-Order Cr Surface Gratings[J]. IEEE Photonics Technology Letters, 2010, 22(22): 1668-1670.
    LIU L, QU H W, WANG Y F, et al. High-brightness single-mode double-tapered laser diodes with laterally coupled high-order surface grating[J]. Optics Letters, 2014, 39(11): 3231-3234. doi: 10.1364/OL.39.003231
    LEI Y X, CHEN Y Y, GAO F, et al. High-power single-longitudinal-mode double-tapered gain-coupled distributed feedback semiconductor lasers based on periodic anodes defined by i-line lithography[J]. Optics Communications, 2019, 443: 150-155. doi: 10.1016/j.optcom.2019.02.073
    Li X, Zhou Y, Xu H, et al. High-stability, high-pulse-energy MOPA laser system based on composite Nd: YAG crystal with multiple doping concentrations[J]. Optics &Laser Technology, 2022, 152: 108080.
    BROX O, WIEDMANN J, SCHOLZ F, et al. Integrated 1060nm MOPA pump source for high-power green light emitters in display technology[J]. Proceedings of SPIE, 2008, 6909: 69091G. doi: 10.1117/12.761210
    GORDEEV N Y, PAYUSOV A S, MUKHIN I S, et al. Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance[J]. Semiconductors, 2019, 53(2): 200-204. doi: 10.1134/S1063782619020106
    KAUL T, ERBERT G, MAAßDORF A, et al. Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs[J]. Semiconductor Science and technology, 2018, 33(3): 035005. doi: 10.1088/1361-6641/aaa221
    AHO A T, VIHERIäLä J, KOSKINEN M, et al. High-Power 1.5 μm Tapered Distributed Bragg Reflector Laser Diodes for Eye-Safe LIDAR[J]. IEEE Photonics Technology Letters, 2020, 32(19): 1249-1252. doi: 10.1109/LPT.2020.3019845
    BROX O, BUGGE F, GINOLAS A, et al. High-power ridge waveguide DFB and DFB-MOPA lasers at 1064 nm with a vertical farfield angle of 15°[J]. Proceedings of SPIE, 2010, 7616: 761610. doi: 10.1117/12.840491
    刘野, 刘宇, 肖辉东, 等. 638nm光栅外腔窄线宽半导体激光器[J]. 中国光学,2020,13(6):1249-1256. doi: 10.37188/CO.2020-0249

    LIU Y, LIU Y, XIAO H D, et al. 638 nm narrow linewidth diode laser with a grating external cavity[J]. Chinese Optics, 2020, 13(6): 1249-1256. (in Chinese) doi: 10.37188/CO.2020-0249
    孙胜明, 范杰, 徐莉, 等. 锥形半导体激光器研究进展[J]. 中国光学,2019,12(1):48-58. doi: 10.3788/co.20191201.0048

    SUN S M FAN J, XU L, et al. Progress of tapered semiconductor diode lasers[J]. Chinese Optics, 2019, 12(1): 48-58. (in Chinese) doi: 10.3788/co.20191201.0048
    FRICKE J, WENZEL H, BROX O, et al. Surface Bragg gratings for high brightness lasers[J]. Proceedings of SPIE, 2020, 11301: 113011H.
    LEI Y, CHEN Y, GAO F, et al. 996 nm high-power single-longitudinal-mode tapered gain-coupled distributed feedback laser diodes[J]. Applied Optics, 2019, 58(23): 6426-6432. doi: 10.1364/AO.58.006426
    SPREEMANN M, LICHTNER M, RADZIUNAS M, et al. Measurement and simulation of distributed-feedback tapered master-oscillator power amplifiers[J]. IEEE Journal of Quantum Electronics, 2009, 45(6): 609-616. doi: 10.1109/JQE.2009.2013115
    HELAL M, NYIRENDA-KAUNGA S, BULL S, et al. .Beam quality degradation processes in tapered lasers and DBR tapered lasers[C]. Proceedings of 2017 IEEE High Power Diode Lasers and Systems Conference (HPD), IEEE, 2017: 25-26.
    CHRISTENSEN M, ZINK C, JAMAL M T, et al. Measuring the sensitivity to optical feedback of single-frequency high-power laser diodes[J]. Journal of the Optical Society of America B, 2021, 38(3): 885-892. doi: 10.1364/JOSAB.417258
    ZENG D SH, ZHONG L, LIU S P, et al. Analysis of the time domain characteristics of tapered semiconductor lasers[J]. Journal of Semiconductors, 2020, 41(3): 032305. doi: 10.1088/1674-4926/41/3/032305
    RADZIUNAS M. Modeling and Simulations of Edge-emitting Broad-area Semiconductor Lasers and Amplifiers[M]//WYRZYKOWSKI R, DEELMAN E, DONGARRA J, et al. Parallel Processing and Applied Mathematics. Cham: Springer, 2016: 269-276.
    MOURIKIS C, BLUME G, MAAßDORF A, et al. Coherent beam combining progress on diode lasers and tapered amplifiers at 808 nm[J]. Proceedings of SPIE, 2022, 11983: 119830D.
    JEDRZEJCZYK D, GüTHER R, PASCHKE K, et al. Efficient high-power frequency doubling of distributed Bragg reflector tapered laser radiation in a periodically poled MgO-doped lithium niobate planar waveguide[J]. Optics Letters, 2011, 36(3): 367-369. doi: 10.1364/OL.36.000367
    MÜLLER A, FRICKE J, BUGGE F, et al. DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited, narrowband emission at 1030 nm[J]. Applied Physics B, 2016, 122(4): 87. doi: 10.1007/s00340-016-6360-9
    SUMPF B, THEURER L S, MAIWALD M, et al. 783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power[J]. Appl. Opt., 2021, 60(18): 5418-5423. doi: 10.1364/AO.422688
    SUMPF B, THEURER L S, MAIWALD M, et al. Narrow spectral line-width 785 nm DBR tapered lasers with 7 W output power[J]. Proceedings of SPIE, 2021, 11705: 117050O.
    PABOEUF D, LUCAS-LECLIN G, GEORGES P, et al. Narrow-line coherently combined tapered laser diodes in a Talbot external cavity with a volume Bragg grating[J]. Applied Physics Letters, 2008, 93(21): 211102. doi: 10.1063/1.3036896
    MÜLLER A, MAIWALD M, SUMPF B. Compact diode laser-based dual-wavelength master oscillator power amplifier at 785 nm[J]. IEEE Photonics Technology Letters, 2019, 31(13): 1120-1123. doi: 10.1109/LPT.2019.2920300
    MÜLLER A, MAIWALD M, SUMPF B. Micro-integrated dual-wavelength ridge-waveguide master oscillator power amplifier with an optical output power of 0.5 W at 785 nm[J]. Proceedings of SPIE, 2020, 11301: 113011F.
    DUPORT F, GOMEZ C, FORTIN C, et al. .Directly modulated high power semiconductor optical amplifier[C]. Proceedings of 2018 International Topical Meeting on Microwave Photonics (MWP), IEEE, 2018: 1-4.
    PÉREZ-SERRANO A, VILERA M, TIJERO J M G, et al. A voltage driven traveling-wave model for the simulation of an integrated three-section MOPA under static and modulated operation[J]. IEEE Journal of Quantum Electronics, 2018, 54(2): 1-10.
    PÉREZ-SERRANO A, TIJERO J M G, BALLE S, et al. Numerical analysis of the modulation dynamics in an integrated three-section MOPA using a voltage driven traveling-wave model[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2019, 25(6): 1-10.
    WANG Y, ZHANG X, TONG C, et al. High power femtosecond semiconductor lasers based on saw-toothed master-oscillator power-amplifier system with compressed ASE[J]. Optics Express, 2020, 28(5): 7108-7115. doi: 10.1364/OE.385576
    LI J, KUKSENKOV D V, LIU W, et al. Wavelength tunable high-power single-mode 1060-nm DBR lasers[J]. Proceedings of SPIE, 2012, 8277: 82771L.
    JENSEN O B, SUMPF B, ERBERT G, et al. Widely tunable high-power tapered diode laser at 1060 nm[J]. IEEE Photonics Technology Letters, 2011, 23(21): 1624-1626. doi: 10.1109/LPT.2011.2165702
    TAWFIEQ M, FRICKE J, STöLMACKER C, et al. Spatial filtering of a six-wavelength DBR-RW laser in a MOPA system[J]. Applied Optics, 2021, 60(7): 1864-1870. doi: 10.1364/AO.414883
    VU T N, TIEN T Q, SUMPF B, et al. 16.3 W Peak-Power Pulsed All-Diode Laser Based Multi-Wavelength Master-Oscillator Power-Amplifier System at 964 nm[J]. Applied Sciences, 2021, 11(18): 8608. doi: 10.3390/app11188608
    LI Q, WAN M, LU Y H, et al. 1.9 W single-frequency, grating external-cavity tapered laser with narrow linewidth[J]. Proceedings of SPIE, 2019, 11170: 1117033.
    TAWFIEQ M, MüLLER A, FRICKE J, et al. 5.5 nm wavelength-tunable high-power MOPA diode laser system at 971 nm[J]. Proceedings of SPIE, 2018, 10553: 105531F.
    林晓东, 钟祝强, 王会苹, 等. 单片集成半导体激光器的阵发混沌特性[J]. 光子学报,2018,47(5):0514004. doi: 10.3788/gzxb20184705.0514004

    LIN X D, ZHONG Z Q, WANG H P et al. Characteristics of Intermittent Chaos in a Monolithically Integrated Semiconductor Laser[J]. Acta Photonica Sinica, 2018, 47(5): 0514004. (in Chinese) doi: 10.3788/gzxb20184705.0514004
    匡尚奇, 郭祥帅, 冯玉玲, 等. 半导体激光器系统输出混沌激光研究进展[J]. 中国光学,2021,14(5):1133-1145. doi: 10.37188/CO.2020-0216

    KUANG S Q, GUO X S FENG Y L, et al. Research progress of optical chaos in semiconductor laser systems[J]. Chinese Optics, 2021, 14(5): 1133-1145. (in Chinese) doi: 10.37188/CO.2020-0216
    PNIEL E, DALIN B, GOLOD S, et al. Types of filamentation in tapered diode amplifiers: their causes and features[J]. Optical and Quantum Electronics, 2015, 47(6): 1535-1544. doi: 10.1007/s11082-015-0163-9
    SUJECKI S, BORRUEL L, WYKES J, et al. Nonlinear properties of tapered laser cavities[J]. IEEE Journal of selected topics in quantum electronics, 2003, 9(3): 823-834. doi: 10.1109/JSTQE.2003.818843
    ODRIOZOLA H, TIJERO J, BORRUEL L, et al. Beam properties of 980-nm tapered lasers with separate contacts: Experiments and simulations[J]. IEEE journal of quantum electronics, 2008, 45(1): 42-50.
    ODRIOZOLA H, TIJERO J, ESQUIVIAS I, et al. .Design of 1060 nm tapered lasers with separate contacts C]. Proceedings of 2008 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), IEEE, 2008: 67-68.
    ESQUIVIAS I, ODRIOZOLA H, TIJERO J, et al. Simulation of high brightness tapered lasers[J]. Proceedings of SPIE, 2010, 7616: 76161E. doi: 10.1117/12.841688
    MEINECKE S, DRZEWIETZKI L, WEBER C, et al. Ultra-short pulse generation in a three section tapered passively mode-locked quantum-dot semiconductor laser[J]. Scientific Reports, 2019, 9(1): 1-14. doi: 10.1038/s41598-018-37186-2
    ZHU H Q, ZHU H, YU CH R, et al. Modeling and improving the output power of terahertz master-oscillator power-amplifier quantum cascade lasers[J]. Optics Express, 2020, 28(16): 23239-23250. doi: 10.1364/OE.395227
    BUGGE F, BEGE R, BLUME G, et al. Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm[J]. Journal of Crystal Growth, 2018, 491: 31-35. doi: 10.1016/j.jcrysgro.2018.03.034
    李景, 邱运涛, 曹银花, 等. 高亮度锥形半导体激光器[J]. 发光学报,2016,37(8):990-995. doi: 10.3788/fgxb20163708.0990

    LI J, QIU Y T, CAO Y H et al. High Brightness Tapered Diode Laser[J]. Chinese Journal of Luminescence, 2016, 37(8): 990-995. (in Chinese) doi: 10.3788/fgxb20163708.0990
    孙胜明, 范杰, 徐莉, 等. 976 nm 锥形半导体激光器结构设计与优化[J]. 红外与激光工程,2017,46(12):1205004. doi: 10.3788/IRLA201746.1205004

    SUN S M, FAN J, XU L, et al. Design and optimization of 976 nm tapered semiconductor laser[J]. Infrared and Laser Engineering, 2017, 46(12): 1205004. (in Chinese) doi: 10.3788/IRLA201746.1205004
    DITTMAR F, KLEHR A, SUMPF B, et al. 9-W output power from an 808-nm tapered diode laser in pulse mode operation with nearly diffraction-limited beam quality[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2007, 13(5): 1194-1199. doi: 10.1109/JSTQE.2007.902838
    FAUGERON M, TRAN M, PARILLAUD O, et al. High-power tunable dilute mode DFB laser with low RIN and narrow linewidth[J]. IEEE photonics technology letters, 2012, 25(1): 7-10.
    TIJERO J M G, ODRIOZOLA H, BORRUEL L, et al. Enhanced brightness of tapered laser diodes based on an asymmetric epitaxial design[J]. IEEE Photonics Technology Letters, 2007, 19(20): 1640-1642. doi: 10.1109/LPT.2007.905083
    ZHANG J, MA X L, ZHOU X Y, et al. Mode engineering of semiconductor lasers with vertical periodic layered structures[J]. Journal of Physics D:Applied Physics, 2021, 55(6): 065102.
    WANG L J, LI ZH, TONG C ZH, et al. Near-diffraction-limited Bragg reflection waveguide lasers[J]. Applied Optics, 2018, 57(34): F15-F21. doi: 10.1364/AO.57.000F15
    MA X L, QU H, QI A, et al. High power tapered lasers with optimized photonic crystal structure for low divergence and high efficiency[J]. Semiconductor Science and Technology, 2018, 33(4): 045010. doi: 10.1088/1361-6641/aab141
    ZHOU X Y, MA X L, QU H W, et al. Extremely high-brightness tapered photonic crystal diode laser with narrow-emitting aperture[J]. Applied Physics Express, 2019, 12(9): 094004. doi: 10.7567/1882-0786/ab2eee
    LI Y, DU W CH, KUN ZH, et al. High-brightness tapered laser diodes with photonic crystal structures[J]. Proceedings of SPIE, 2017, 10697: 106974Y.
    PATEL S J, JARIWALA A, PANCHAL C, et al. Suppression of Optical Feedback in Laser Diodes Using Multilayered Broad-band Ultra-low Reflective Facets-coating[J]. Journal of Nano- and Electronic Physics, 2020, 12(2): 02030.
    刘翠翠, 林楠, 熊聪, 等. Si杂质扩散诱导InGaAs/AlGaAs量子阱混杂的研究[J]. 中国光学,2020,13(1):203-216. doi: 10.3788/co.20201301.0203

    LIU C C, LIN N, XIONG C, et al. Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities[J]. Chinese Optics, 2020, 13(1): 203-216. (in Chinese) doi: 10.3788/co.20201301.0203
    WANG Y CH, QU H W, WANG Y F, et al. Radio Frequency Plasma-Enhanced Reactive Magnetron Sputtering Deposition of α-SiN x on Photonic Crystal—Laser Diodes for Facet Passivation[J]. ACS omega, 2019, 4(23): 20205-20211. doi: 10.1021/acsomega.9b02452
    范智斌, 陈泽茗, 周鑫, 等. 氮化硅光子器件与应用研究进展[J]. 中国光学,2021,14(4):998-1018. doi: 10.37188/CO.2021-0093

    FAN ZH B, CHEN Z M, ZHOU X, et al. Recent advances in silicon nitride-based photonic devices and applications[J]. Chinese Optics, 2021, 14(4): 998-1018. (in Chinese) doi: 10.37188/CO.2021-0093
    FIEBIG C, EPPICH B, PASCHKE K, et al. High-brightness 980-nm tapered laser—Optimization of the laser rear facet[J]. IEEE Photonics Technology Letters, 2010, 22(5): 341-343. doi: 10.1109/LPT.2009.2039348
    SUMPF B, HASLER K-H, ADAMIEC P, et al. 1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality[J]. Proceedings of SPIE, 2009, 7230: 72301E. doi: 10.1117/12.806690
    MÜLLER A, ZINK C, GINOLAS A, et al. .10.5 W central lobe output power obtained with an efficient 1030 nm DBR tapered diode laser C]. Proceedings of 2017 IEEE High Power Diode Lasers and Systems Conference (HPD), IEEE, 2017: 61-62.
    MÜLLER A, ZINK C, FRICKE J, et al. 1030nm DBR tapered diode laser with up to 16 W of optical output power[J]. Proceedings of SPIE, 2017, 10123: 101231B.
    VILERA M, PÉREZ-SERRANO A, TIJERO J, et al. Emission Characteristics of a 1.5um All-Semiconductor Tapered Master Oscillator Power Amplifier[J]. IEEE Photonics Journal, 2015, 7(2): 1500709.
    李璟, 刘媛媛, 马骁宇, 等. 电极分离的 980nm 锥形激光器的研制[J]. 半导体学报,2007,28(5):645-650.

    LI J, MA X Y, LIU Y Y, et al. High-Power Ridge-Waveguide Tapered Diode Lasers at 980nm[J]. Journal of semiconductors, 2007, 28(5): 645-650. (in Chinese)
    曼玉选, 仲莉, 马骁宇, 等. 975 nm 分离电极锥形半导体激光器特性分析[J]. 中国激光,2021,48(17):1701005. doi: 10.3788/CJL202148.1701005

    MAN Y X, ZHONG L, MA X Y, et al. Characteristic Analysis of 975 nm Conical Semiconductor Laser with Separated Electrode[J]. Chinese Journal of Lasers., 2021, 48(17): 1701005. (in Chinese) doi: 10.3788/CJL202148.1701005
    PASCHKE K, SUMPF B, DITTMAR F, et al. Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W[J]. IEEE Journal of selected topics in quantum electronics, 2005, 11(5): 1223-1227. doi: 10.1109/JSTQE.2005.853840
    ALBRODT P, HANNA M, MORON F, et al. .Coherent beam combining of high-power tapered amplifiers[C]. Proceedings of 2017 IEEE High Power Diode Lasers and Systems Conference (HPD), IEEE, 2017: 15-16.
    ALBRODT P, NIEMEYER M, CRUMP P, et al. Coherent beam combining of high power quasi continuous wave tapered amplifiers[J]. Optics Express, 2019, 27(20): 27891-27901. doi: 10.1364/OE.27.027891
    JEDRZEJCZYK D, BROX O, BUGGE F, et al. High-power distributed-feedback tapered master-oscillator power amplifiers emitting at 1064 nm[J]. Proceedings of SPIE, 2010, 7583: 758317. doi: 10.1117/12.842001
    FIEBIG C, PEKAREK S, PASCHKE K, et al. High-brightness distributed-Bragg-reflector tapered diode lasers: pushing your application to the next level[J]. Proceedings of SPIE, 2011, 7918: 79180R. doi: 10.1117/12.873362
    SUMPF B, THEURER L S, MAIWALD M, et al. Comparison of electro-optical, spectral, and spatial beam parameters of 785nm DBR tapered lasers with different grating lengths[J]. Proceedings of SPIE, 2022, 12021: 120210H.
    AHO A, VIHERIäLä J, VIRTANEN H, et al. High peak power laser diodes at 1.5 um with integrated wavelength locking element (Conference Presentation)[J]. Proceedings of SPIE, 2020, 11262: 112620E.
    MüLLER A, ZINK C, FRICKE J, et al. Efficient, high brightness 1030 nm DBR tapered diode lasers with optimized lateral layout[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2017, 23(6): 1-7.
    LI Y, ZHOU K, HE L, et al. Structural design of mode propagation interface for tapered laser diodes[J]. Proceedings of SPIE, 2020, 11717: 117172H.
    FIEBIG C, FEISE D, EPPICH B, et al. Tapered diode laser with reverse bias absorber section[J]. IEEE Photonics Technology Letters, 2009, 21(23): 1755-1757. doi: 10.1109/LPT.2009.2032781
    KASPARI C, BLUME G, FEISE D, et al. Optimisation of 660 nm high-power tapered diode lasers[J]. IET optoelectronics, 2011, 5(3): 121-127. doi: 10.1049/iet-opt.2010.0034
    ZINK C, MAIWALD M, WENZEL H, et al. .Monolithic master oscillator with tapered power amplifier diode laser at 1060 nm with additional control section for high power operation[C]. Proceedings of the European Conference on Lasers and Electro-Optics 2019, OSA, 2019: cb_3_1.
    CAMPBELL J, LABRECQUE M, RENNER D, et al. .2.7 W continuous wave nearly-diffraction-limited output 1550 nm tapered laser diode amplifier[C]. Proceedings of the 27th International Semiconductor Laser Conference (ISLC), IEEE, 2021: 1-2.
    SUMPF B, PASCHKE K. Spectrally stabilized high-power high-brightness DBR-tapered lasers in the VIS and NIR range[J]. Proceedings of SPIE, 2018, 10518: 1051817.
    SUMPF B, HASLER K H, ADAMIEC P, et al. High-brightness quantum well tapered lasers[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2009, 15(3): 1009-1020. doi: 10.1109/JSTQE.2008.2010952
  • 加载中


    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(11)  / Tables(5)

    Article views(889) PDF downloads(543) Cited by()
    Proportional views


    DownLoad:  Full-Size Img  PowerPoint