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HUO Ting-ting, ZHANG Dong-dong, SHI Xiang-lei, PAN Yu, SUN Li-jie, SU Yan-jie. High-performance self-powered photodetectors based on the carbon Nanomaterial/GaAs vdW heterojunctions[J]. Chinese Optics. doi: 10.37188/CO.2021-0149
Citation: HUO Ting-ting, ZHANG Dong-dong, SHI Xiang-lei, PAN Yu, SUN Li-jie, SU Yan-jie. High-performance self-powered photodetectors based on the carbon Nanomaterial/GaAs vdW heterojunctions[J]. Chinese Optics. doi: 10.37188/CO.2021-0149

High-performance self-powered photodetectors based on the carbon Nanomaterial/GaAs vdW heterojunctions

doi: 10.37188/CO.2021-0149
Funds:  Supported by This work is supported by the National Natural Science Foundation of China (No. 61974089); the Shanghai Natural Science Foundation (No. 19ZR1426900).
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  • With the advantages such as simple structure, simple process and easy interface control, the photoelectric devices based on carbon nanomaterial/bulk semiconductor van der Waals (vdW) heterojunctions can fully utilize the ultrahigh carrier mobility of carbon nanomaterials and the excellent photoelectric properties of bulk semiconductors. Especially, the novel mixed-dimensional vdW heterojunctions with atomic-level interfaces, whose bandgaps are matched with those of bulk semiconductors, can be formed by controlling the diameter/chirality and Fermi level of single-walled carbon nanotubes (SWCNTs). Here, we reported a self-powered broadband photodetector based on the pn vdW heterojunctions by combining (6, 5)-enriched semiconducting SWCNT film with n-type GaAs, and used graphene to reduce the probability of carrier recombination in SWCNT film and to promote the carrier transport. The experimental results suggest that the self-powered device exhibits high-sensitivity photoelectric response toward the incident photons in the 405~1064 nm range, and that the max photoelectric responsivity of 1.214 A/W and the specific detectivity of 2 × 1012 Jones could be achieved at zero bias.
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