Volume 13 Issue 5
Sep.  2020
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LIANG Zhi-xun, XU Chuan-pei, ZHU Ai-jun, HU Cong, DU She-hui. Integrated silicon waveguide electro-optic half-adder based on Epsilon-Near-Zero and ITO[J]. Chinese Optics, 2020, 13(5): 1001-1013. doi: 10.37188/CO.2020-0078
Citation: LIANG Zhi-xun, XU Chuan-pei, ZHU Ai-jun, HU Cong, DU She-hui. Integrated silicon waveguide electro-optic half-adder based on Epsilon-Near-Zero and ITO[J]. Chinese Optics, 2020, 13(5): 1001-1013. doi: 10.37188/CO.2020-0078

Integrated silicon waveguide electro-optic half-adder based on Epsilon-Near-Zero and ITO

Funds:  Supported by National Natural Science Foundation of China (No. 61561012, No. 61671164, No. 61861012), Natural Science Foundation of Guangxi Province (No. 2018GXNSFAA138115, No. 2017GXNSFAA198021, No. 2020GXNSFAA159172)
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  • Corresponding author: xcp@guet.edu.cn
  • Received Date: 28 Apr 2020
  • Rev Recd Date: 08 Jun 2020
  • Available Online: 16 Sep 2020
  • Publish Date: 01 Oct 2020
  • In order to achieve high-speed electro-optic hybrid operation of half-adders and solve their disadvantages in speed, energy consumption and size, a silicon waveguide integrated electro-optic half-adder is designed based on an Epsilon-Near-Zero and ITO electrical-tunable film. The ITO electrical-tunable film is used as the switch for the optical path, and thus achieve the half-add function of two binary numbers. Simulation results show that the device unit can complete the optical signal logic control when the applied voltage is 0 V and 2.35 V. When the hybrid electro-optic half-adder works at a wavelength of 1550 nm, the insertion loss is 0.63 dB, the extinction ratio is 31.73 dB, the data transmission rate is 61.62 GHz, the energy consumption per bit is 13.44 fJ, and the size of the whole half-adder is less than 21.3 μm×1.5 μm×1.2 μm. The device is compact and has a low insertion loss. This provides a theoretical foundation for the design of high-speed hybrid electro-optic logic devices and half-adders.

     

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