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不同气体环境下532 nm激光诱导硅表面形貌的研究

杨宏道 李晓红 李国强 袁春华 邱荣

杨宏道, 李晓红, 李国强, 袁春华, 邱荣. 不同气体环境下532 nm激光诱导硅表面形貌的研究[J]. 中国光学(中英文), 2011, 4(1): 86-92.
引用本文: 杨宏道, 李晓红, 李国强, 袁春华, 邱荣. 不同气体环境下532 nm激光诱导硅表面形貌的研究[J]. 中国光学(中英文), 2011, 4(1): 86-92.
YANG Hong-dao, LI Xiao-hong, LI Guo-qiang, YUAN Chun-hua, QIU Rong. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres[J]. Chinese Optics, 2011, 4(1): 86-92.
Citation: YANG Hong-dao, LI Xiao-hong, LI Guo-qiang, YUAN Chun-hua, QIU Rong. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres[J]. Chinese Optics, 2011, 4(1): 86-92.

不同气体环境下532 nm激光诱导硅表面形貌的研究

基金项目: 

四川省教育厅资助科研项目(No.08ZB006和No.09ZA128);西南科技大学博士研究基金资助项目(No.06ZX7113)

详细信息
    作者简介:

    杨宏道(1984—),男,山西运城人,硕士研究生,主要从事激光与物质的相互作用方面的研究。 E-mail:yanghongdao2006@163.com 李晓红(1977—),女,甘肃泾川人,博士后,副研究员,主要从事激光与物质相互作用方面的研究。 E-mail:li_xh1125@yahoo.com.cn

    杨宏道(1984—),男,山西运城人,硕士研究生,主要从事激光与物质的相互作用方面的研究。 E-mail:yanghongdao2006@163.com 李晓红(1977—),女,甘肃泾川人,博士后,副研究员,主要从事激光与物质相互作用方面的研究。 E-mail:li_xh1125@yahoo.com.cn

  • 中图分类号: TN249

Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres

  • 摘要: 研究了在不同气体环境下,利用532 nm Nd∶ YAG纳秒脉冲激光累积辐照单晶硅表面形成的微结构,结果表明,在其他条件相同,背景气体不同的情况下,背景气体对硅表面形貌的形成起着重要的作用。具体分析了真空、N2和SF6 3种环境气氛下形成的微结构,结果显示,在SF6中形成的锥形微结构的数密度比在N2和真空中的大,并且锥形具有更大的纵横比;在N2、真空和SF6中形成的微结构尺寸依次减小。SF6气氛下,激光辅助化学刻蚀的效率比在真空和N2气氛中的高。另外,辐照区域边缘有波纹微结构形成,分析认为,该微结构的形成是由表面张力波的冷却导致的。

     

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出版历程
  • 收稿日期:  2010-08-11
  • 修回日期:  2010-10-13
  • 刊出日期:  2011-02-25

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