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量子点增强硅基探测成像器件的研究进展

朱晓秀 葛咏 李建军 赵跃进 邹炳锁 钟海政

朱晓秀, 葛咏, 李建军, 赵跃进, 邹炳锁, 钟海政. 量子点增强硅基探测成像器件的研究进展[J]. 中国光学, 2020, 13(1): 62-74. doi: 10.3788/CO.20201301.0062
引用本文: 朱晓秀, 葛咏, 李建军, 赵跃进, 邹炳锁, 钟海政. 量子点增强硅基探测成像器件的研究进展[J]. 中国光学, 2020, 13(1): 62-74. doi: 10.3788/CO.20201301.0062
ZHU Xiao-xiu, GE Yong, LI Jian-jun, ZHAO Yue-jin, ZOU Bing-suo, ZHONG Hai-zheng. Research progress of quantum dot enhanced silicon-based photodetectors[J]. Chinese Optics, 2020, 13(1): 62-74. doi: 10.3788/CO.20201301.0062
Citation: ZHU Xiao-xiu, GE Yong, LI Jian-jun, ZHAO Yue-jin, ZOU Bing-suo, ZHONG Hai-zheng. Research progress of quantum dot enhanced silicon-based photodetectors[J]. Chinese Optics, 2020, 13(1): 62-74. doi: 10.3788/CO.20201301.0062

量子点增强硅基探测成像器件的研究进展

doi: 10.3788/CO.20201301.0062
基金项目: 

国家自然科学基金优秀青年基金项目 No. 61722502

中港合作基金 No.51761165021

详细信息
    作者简介:

    朱晓秀(1992-), 女, 山东聊城人, 硕士研究生, 2016年于中国地质大学(武汉)获得学士学位, 主要从事钙钛矿量子点光学膜及其光电集成应用研究。E-mail:2120161207@bit.edu.cn

    钟海政(1981—),男,河北清河人,博士,教授,博士生导师,2003年于吉林大学获得学士学位,2008年于中国科学院化学研究所获得博士学位,主要从事光学与光电子材料研究,在钙钛矿、铜铟硫等量子点材料及其应用方面有突出贡献。 E-mail:hzzhong@bit.edu.cn

  • 中图分类号: TB34;TH741

Research progress of quantum dot enhanced silicon-based photodetectors

Funds: 

Supported by National Natural Science Foundation of China Excellent Youth Fund No. 61722502

National Science Foundation of China/Research Grant Council of Hong Kong Project No.51761165021

More Information
  • 摘要: 硅基探测成像器件具有可靠性高、易集成和成本低等优点,是目前应用最广泛的探测成像器件。随着人工智能和无人驾驶等技术的日益发展,对探测成像器件提出了更高的要求,而硅基探测成像器件性能的提升成为重要的研究方向。量子点具有吸收系数大、光谱可调、发光效率高和易集成等优点,是一类优异的光谱转换和光调制材料。利用量子点材料可调制的光学特性,可以对硅基探测成像器件的功能进行拓展,从而实现紫外响应增强、红外响应拓展、紫外偏振探测和多光谱成像等功能。经过多年的研究,这一领域已经取得了一定的进展,部分技术展现出较好的应用前景。本文介绍了量子点增强硅基探测器在紫外探测、红外成像、偏振探测和多光谱成像方面的研究进展,希望能够引起国内学术界和工业界的关注和重视。
  • 图  1  不同探测器结构示意图

    Figure  1.  Schematic diagram of different photodetectors

    图  2  3种量子点透射电镜照片及其吸收/荧光光谱图。(a)和(b) CdSe量子点[15];(c)和(d) CdSe@CdS点棒[31];(e)和(f) CH3NH3PbX3量子点及其在自然光和紫外光下的照片[23]

    Figure  2.  Transmission electron microscopy images and absorption/fluorescence spectra of three kinds of quantum dots. (a), (b) CdSe quantum dots[15]; (c), (d) CdSe@CdS core/shell rods[31]; (e), (f) CH3NH3PbX3 quantum dots and photograph under natural and ultraviolet light[23]

    图  3  量子点增强硅基探测器应用

    Figure  3.  Applications of quantum-dot-enhanced photodetector

    图  4  CH3NH3PbBr3量子点增强EMCCD[27]

    Figure  4.  CH3NH3PbBr3 quantum-dot-enhanced EMCCD[27]

    图  5  量子点增强红外探测成像应用实例[51]

    Figure  5.  Applications of quantum-dot-enhanced IR photodetector[51]

    图  6  点棒结构纳米棒增强偏振探测成像应用实例[57]

    Figure  6.  Application of dot-in-rods-enhanced polarization photodetector[57]

    图  7  量子点在光谱滤光中的应用实例[70]。(a)量子点滤光膜阵列、透过光谱及其集成实物图;(b)和(c)量子点光谱仪的光谱重建和分辨率测试结果

    Figure  7.  Application of quantum-dot-enhanced spectral photodetector[70]. (a) Quantum dot filter array, transmission spectra and integration prototype; (b), (c)reconstruction and resolution test results

    表  1  CCD与CMOS成像器件关键参数对比

    Table  1.   Comparison of key parameters for CCD and CMOS

    关键参数 CCD CMOS
    像素信号 电荷包 电压
    芯片信号 模拟电压 比特(数字)
    灵敏度 较高
    动态范围 中至高
    一致性 稍微较低
    成本 较高 较低
    下载: 导出CSV
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  • 收稿日期:  2019-06-13
  • 修回日期:  2019-07-03
  • 刊出日期:  2020-02-01

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    /

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    返回