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基底温度对中阶梯光栅厚铝膜质量的影响

孙梦至 高劲松 李资政 杨海贵 王笑夷

孙梦至, 高劲松, 李资政, 杨海贵, 王笑夷. 基底温度对中阶梯光栅厚铝膜质量的影响[J]. 中国光学(中英文), 2016, 9(6): 656-662. doi: 10.3788/CO.20160906.0656
引用本文: 孙梦至, 高劲松, 李资政, 杨海贵, 王笑夷. 基底温度对中阶梯光栅厚铝膜质量的影响[J]. 中国光学(中英文), 2016, 9(6): 656-662. doi: 10.3788/CO.20160906.0656
SUN Meng-zhi, GAO Jin-song, LI Zi-zheng, YANG Hai-gui, WANG Xiao-yi. Influence of substrate temperature on the quality of thick Al films of echelle grating[J]. Chinese Optics, 2016, 9(6): 656-662. doi: 10.3788/CO.20160906.0656
Citation: SUN Meng-zhi, GAO Jin-song, LI Zi-zheng, YANG Hai-gui, WANG Xiao-yi. Influence of substrate temperature on the quality of thick Al films of echelle grating[J]. Chinese Optics, 2016, 9(6): 656-662. doi: 10.3788/CO.20160906.0656

基底温度对中阶梯光栅厚铝膜质量的影响

doi: 10.3788/CO.20160906.0656
基金项目: 

国家重大科研装备研制基金资助项目 No.ZBY2008-1

国家自然科学基金资助项目 No.61306125,No.U1435210

吉林省科技发展计划资助项目 No.Y3453UM130

吉林省留学人员科技创新创业资助项目 No. Y3293UM130

详细信息
    作者简介:

    孙梦至(1991-),女,黑龙江哈尔滨人,硕士研究生,2013年于哈尔滨工业大学获得学士学位,主要从事光学功能薄膜方面的研究。E-mail:sunmengzhi@icloud.com

    通讯作者:

    高劲松(1968—),男,吉林白城人,博士,研究员,1989年于浙江大学获得学士学位,2005年于中国科学院长春光学精密机械与物理研究所获得博士学位,主要从事光学薄膜与电磁功能薄膜等方面的研究。E-mail:gaojs@ciomp.ac.cn

  • 中图分类号: O484;TB43

Influence of substrate temperature on the quality of thick Al films of echelle grating

Funds: 

Supported by National Key Scientific and Research Equipment Development Foundation of China No.ZBY2008-1

National Natural Science Foundation of China No.61306125,No.U1435210

Jilin Provincial S&T Development Project of China No.Y3453UM130

Jilin Provincial S&T Innovation Project of China No. Y3293UM130

More Information
  • 摘要: 大尺寸中阶梯光栅具有大孔径和极高的衍射级次,可以实现普通光栅难以达到的极高光谱分辨率。中阶梯光栅通常是利用刻划机在厚铝膜上刻划而成,所以制备大面积均匀性的高质量铝膜刻划基底是实现高性能大尺寸中阶梯光栅的关键因素。在较厚铝膜的制备工艺中,基底温度是至关重要的工艺参数。本文通过电子束热蒸发镀铝工艺在不同基底温度下制备了厚铝膜样品,并利用原子力显微镜、扫描电镜等手段从宏观和微观尺度详细分析了基底温度对铝膜质量的影响。铝膜平均晶粒尺寸从100℃时的264.34 nm增大到200℃时的384.97 nm和300℃时的596.35 nm,表面粗糙度Rq从100℃时的34.7 nm增长到200℃时的58.9 nm和300℃时的95.1 nm。结果表明,随着基底温度的升高表面粗糙度迅速增大,铝膜的表面质量严重退化。

     

  • 图 1  电子束热蒸发系统结构示意图

    Figure 1.  Schematic structure diagram of electron beam evaporation system

    图 2  不同基底温度沉积的铝膜表面和截面SEM图

    Figure 2.  Top-down and cross-sectional SEM images of Al films at different substrate temperatures

    图 3  不同基底温度沉积的铝膜表面AFM图

    Figure 3.  AFM images of Al film surfaces at different substrate temperatures

    图 4  铝膜晶粒尺寸随基底温度的变化

    Figure 4.  Dependence of Al film grain size on the substrate temperature

    图 5  铝膜表面粗糙度Rq随基底温度的变化

    Figure 5.  Dependence of Al film surface roughness Rq on the substrate temperature

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  • 收稿日期:  2016-06-01
  • 修回日期:  2016-08-12
  • 刊出日期:  2016-12-01

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