CCD/EMCCD光电参数测试系统：设计与使用

沈吉; V. Zabudsky VIACHESLAV; 常维静; 那启跃; 简云飞; V. Rikhalsky OLEG; G. Golenkov OLEKSANDR; P. Reva VOLODYMYR

doi:10.37188/CO.EN-2023-0016

CCD/EMCCD光电参数测试系统：设计与使用

1.
华东光电集成器件研究所, 江苏苏州 215263
2.
乌克兰科学院V.E. Lashkaryov半导体物理研究所, 乌克兰基辅 01001
3.
乌克兰科学院Bogomoletz生理学研究所, 乌克兰基辅 01001

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- 被引次数: 0
出版历程
- 收稿日期: 2023-07-04
- 录用日期: 2023-08-28
- 网络出版日期: 2023-09-12

CCD/EMCCD Photoelectronic Parameter Test System: Design and Use

doi: 10.37188/CO.EN-2023-0016

1.
East China Institute of Optoelectronic Integrated Devices, Suzhou 215263, China
2.
V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv 01001, Ukraine
3.
Bogomoletz Institute of Physiology of NAS of Ukraine, Kyiv 01001, Ukraine

Funds: Supported by

More Information

Author Bio:
沈　吉（1988—），男，江苏海门人，硕士研究生，高级工程师，从事光电探测器件与组件科研开发。E-mail：njustshenji@126.com

Corresponding author: njustshenji@126.com

摘要

摘要:
开发了的测试系统用于测量CCD和EMCCD（电子倍增CCD）芯片的光电参数。测试系统可以切换自动或手动模式来测量器件的暗电流、读出放大器响应度、电荷转移效率、电荷容量和其他参数。测试系统可以针对不同规格和结构的CCD/EMCCD器件，完成CCD晶圆或封装好的成品的参数测试，实现576×288、640×512、1024×1024、1280×1024 CCD/EMCCD的测试和筛选。
- CCD /
- EMCCD /
- 测试系统 /
- 光电参数
Abstract:
This paper outlines the design and usage of equipment developed to measure the photoelectrical parameters of CCD and electron-multiplying charge-coupled device (EMCCD) chips. The test system’s automatic and manual modes provide measurements of dark currents, the output amplifier’s responsivity, charge transfer efficiency, charge capacity, and other parameters. The system can be configured for measurements of different formats and architectures (CCD/EMCCD) both on wafer and in package. The developed equipment was used for 576 × 288, 640 × 512, 768 × 576, 1024 × 1024, 1280 × 1024 CCD and EMCCD chip testing and sorting.
- CCD /
- EMCCD /
- test system /
- photoelectrical parameters

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Figure 1. Block diagram of the entire measurement system

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Figure 2. The block diagram of the direct and pulse voltage source unit

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Figure 3. Block diagram of the FPGA board

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Figure 4. Block diagram of the device (outlined by a dashed line) implemented in FPGA

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Figure 5. Amplification of DACs output voltages

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Figure 6. High voltage amplifier circuit

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Figure 7. Schematic diagram of the experimental driver on the base of GaN HEMT

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Figure 8. The proposed driver’s power consumption caused the circuit to require an effective heat sink.

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Figure 9. Flow chart for measuring maximum output voltage, charge capacity, and output amplifier responsivity.

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Figure 10. Results of measuring system tests. Volt-charge responsivity for normal and gain modes, average dark signal, and dependence of gain vs. R02HV voltage were measured.

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Table 1. Parameters of 16 DC channels

Channel quantity	Setting range, V	Total relative error	Noise, mV/300 kHz
1	−5···+10	typical: ±0.1%; maximal: ±0.5% from Vmax	<0.15
3	0···+15		< 0.15
4	−5···+15		< 0. 20
4	0···+25		< 0.40
4	0···35		< 0.70

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Table 2. Parameters of 16 AC channels

Channel quantity	Setting range, V	Wave front, ns	Load (each channel)
3	HL, LL: –5...+10	120..200	up to 24 nF
4	HL: –5...+10 or 0...+15 LL: –5...+10 or 0...+15	< 15	220 pF
1	HL: 0...+15 LL: 0...+15	< 15	220 pF
6	HL: +5 LL: 0	< 5	150 pF
1	HL: –5...+ 15; LL, ML: –5...+10 (three level signal)	120..200	up to 24 nF
1	HL: –5...+45 LL: –5...+ 45 (square or sine wave)	20	100 pF

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Table 3. Electrical parameters of EMCCD matrices measurable by the test system

No	Parameter	Range
1	Resistances between the pairs of chip contact pads
2	Average Dark Signal	> 1 e/pixel/s
3	Dark Signal Non-uniformity (DSNU)
4	Multiplication Gain	1～1000
5	Peak Output Voltage (POV)	< 1 V
6	Output Amplifier Responsivity (OAR)	μV/e-
7	Register Charge Handling
8	Electric Charge Transfer Efficiency (CTE)	≤ 0.99995

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Table 4. Example of test system measurements

1.	POV nm, norm mode (max) = 0.177 V;
2.	SCis (saturation charge) = 132151 e`/pixel;
3.	POV hgm, high gain mode (max) = 1.782 V;
4.	CHCgr, Charge Handling Capability of gain register = 1280481 e`/pixel;
5.	White column defects = 3
6.	Dark column defects quantity = 18
7.	Average Dark Signal (U) = 0.002939 V/pixel/s
8.	Average Dark Signal (e`) = 2396 e`/pixel/s
9.	OAR (output amplifier responsivity) = 1.416 uV/e` (NM: 1.226 uV/e`)
10.	Dark signal non-uniformity (DSNU) (rms) = 67.334 %
11.	Charge transfer efficiency (CTE) = 99.908 %

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