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摘要:
本文报道了基于双有源区的4.7 μm中波红外量子级联激光器，脊宽9.5 μm，可实现室温连续基横模工作。通过在单有源区中心插入0.8 μm InP间隔层，将原有的单有源区转变成双有源区结构，可显著降低器件有源区的峰值温度，同时抑制高阶横模的产生。在288 K温度下，腔长为5 mm的双有源区器件阈值电流密度为1.14 kA/cm2，连续输出功率为0.71 W，快轴发散角为27.3°，慢轴发散角为18.1°。同常规单有源区结构的器件相比，采用双有源区结构的器件，其最大光输出功率未出现退化，同时器件慢轴方向由多模变化为基横模，光束质量得到了显著改善。本工作为改善高功率中波量子级联激光器的慢轴光束质量提供了一种解决思路。
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关键词:
- 中红外 /
- 量子级联激光器 /
- 双有源区 /
- 金属有机物化学气相沉积 /
- 连续输出
Abstract:In the article, we report a 4.7 μm mid wave infrared quantum cascade laser based on double active regions, with a ridge width of 9.5 μm, It can achieve continuous single transverse mode operation at room temperature. By inserting 0.8 μm InP, the original single active region is transformed into a double active region structure, it can significantly reduce the peak temperature of the device's active region and suppress the generation of higher-order transverse modes. At a temperature of 288 K, the device with a double active region structure with a cavity length of 5 mm has a threshold current density of 1.14 kA/cm2, the continuous output power of 0.706 W, the fast axis divergence angle of 27.3°, and the slow axis divergence angle of 18.1°. Compared with conventional devices with a single active region structure, the devices with a double active region structure have no degradation in their maximum optical output power, and the beam quality in the slow axis direction of the device has been significantly improved. This work provides another solution for improving the slow axis beam quality of high-power medium wave quantum cascade lasers.
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Key words:
- mid-infrared /
- quantum cascade laser /
- double active region /
- MOCVD /
- continuous-wave output
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图 1 (a)有限元仿真结构示意图;(b) 插入不同InP厚度的横向模态的相对品质因子图
Figure 1. (a) Schematic diagram of finite element simulation structure; (b) Relative figure of merit for transverse modes of inserting different InP thicknesses
图 2 (a)单有源区器件热学仿真；(b)双有源区器件热学仿真
Figure 2. (a) Thermal simulation of single active region device; (b) Hot blooded simulation of double active region device.
图 3 (a)Sample 1和Sample 2的X 射线双晶衍射；(b) Sample 1和Sample 2的X 射线双晶衍射放大图
Figure 3. (a) X-ray double diffraction of Sample 1 and Sample 2; (b) enlarged images of satellite diffraction peaks of sample 1 and sample 2
图 4 (a)Device 1结构示意图；(b) Device 1前腔面在电镜下的横截面图；(c)Device 2结构示意图；(d) Device 2在电镜下的横截面图
Figure 4. (a) Schematic diagram of Device 1; (b) SEM of Device 1 (c) Schematic diagram of Device 2; (d) SEM of Device 2
图 5 (a) Device 1和Device 2在连续模式下的PIV曲线；(b) Device 1和Device 2在阈值电流下的光谱
Figure 5. (a) PIV curves of Device 1 and Device 2 in continuous wave; (b) Spectra of Device 1and Device 2 at Threshold Current
图 6 (a) Device 1和Device 2在慢轴方向的远场；(b) Device 1和Device 2在快轴方向的远场
Figure 6. (a) Far field of Device 1 and Device 2 in the slow axis direction; (b) Far field of Device 1 and Device 2 in the fast axis direction
表 1 不同材料的有效折射率[25]
Table 1. Effective refractive index of different materials
Materials doping(cm−3) Refractive index InP substrate 2×1017 3.084+2.00000E-4i InP 2×1016 3.091+2.00000E-5i InGaAs 2×1016 3.393+7.88405E-5i Active 2×1017 3.245+4.01336E-5i InP 2×1017 3.084+2.00000E-4i InP 1×1017 3.088+1.00000E-4i InP 5×1018 2.893+5.00000E-3i InP 2×1019 2.188+2.70000E-2i Au / 3.319+1.84110E+1i Si3N4 / 1.358+6.50000E-4i Fe:InP / 3.099+6.34895E-8i 
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