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双有源区结构4.7 μm中波红外量子级联激光器

王渝沛 章宇航 罗晓玥 钱晨灏 程洋 赵武 魏志祥 韩迪仪 孙方圆 王俊 周大勇

王渝沛, 章宇航, 罗晓玥, 钱晨灏, 程洋, 赵武, 魏志祥, 韩迪仪, 孙方圆, 王俊, 周大勇. 双有源区结构4.7 μm中波红外量子级联激光器[J]. 中国光学(中英文). doi: 10.37188/CO.2023-0239
引用本文: 王渝沛, 章宇航, 罗晓玥, 钱晨灏, 程洋, 赵武, 魏志祥, 韩迪仪, 孙方圆, 王俊, 周大勇. 双有源区结构4.7 μm中波红外量子级联激光器[J]. 中国光学(中英文). doi: 10.37188/CO.2023-0239
WANG Yu-pei, ZHANG Yu-hang, LUO Xiao-yue, QIAN Chen-hao, CHENG Yang, ZHAO Wu, WEI Zhi-xiang, HAN Di-yi, SUN Fang-yuan, WANG Jun, ZHOU Da-yong. Double active region structure 4.7 μm medium wave infrared quantum cascade laser[J]. Chinese Optics. doi: 10.37188/CO.2023-0239
Citation: WANG Yu-pei, ZHANG Yu-hang, LUO Xiao-yue, QIAN Chen-hao, CHENG Yang, ZHAO Wu, WEI Zhi-xiang, HAN Di-yi, SUN Fang-yuan, WANG Jun, ZHOU Da-yong. Double active region structure 4.7 μm medium wave infrared quantum cascade laser[J]. Chinese Optics. doi: 10.37188/CO.2023-0239

双有源区结构4.7 μm中波红外量子级联激光器

doi: 10.37188/CO.2023-0239
基金项目: 中文基金
详细信息
    作者简介:

    王渝沛(1998—),男,山西临汾人,硕士研究生主要从事中波量子级联激光器方面的研究。E-mail: 17843082512@163.com

    王 俊(1965—),男,湖北人,博士,教授,博士生导师,1997 年于加拿大McMaster大学取得博士学位,主要从事半导体激光器方面的研究。E-mail:wjdz@scu.edu.cn

  • 中图分类号: TP394.1;TH691.9

Double active region structure 4.7 μm medium wave infrared quantum cascade laser

Funds: Supported by
More Information
  • 摘要:

    本文报道了基于双有源区的4.7 μm中波红外量子级联激光器,脊宽9.5 μm,可实现室温连续基横模工作。通过在单有源区中心插入0.8 μm InP间隔层,将原有的单有源区转变成双有源区结构,可显著降低器件有源区的峰值温度,同时抑制高阶横模的产生。在288 K温度下,腔长为5 mm的双有源区器件阈值电流密度为1.14 kA/cm2,连续输出功率为0.71 W,快轴发散角为27.3°,慢轴发散角为18.1°。同常规单有源区结构的器件相比,采用双有源区结构的器件,其最大光输出功率未出现退化,同时器件慢轴方向由多模变化为基横模,光束质量得到了显著改善。本工作为改善高功率中波量子级联激光器的慢轴光束质量提供了一种解决思路。

     

  • 图 1  (a)有限元仿真结构示意图;(b) 插入不同InP厚度的横向模态的相对品质因子图

    Figure 1.  (a) Schematic diagram of finite element simulation structure; (b) Relative figure of merit for transverse modes of inserting different InP thicknesses

    图 2  (a)单有源区器件热学仿真;(b)双有源区器件热学仿真

    Figure 2.  (a) Thermal simulation of single active region device; (b) Hot blooded simulation of double active region device.

    图 3  (a)Sample 1和Sample 2的X 射线双晶衍射;(b) Sample 1和Sample 2的X 射线双晶衍射放大图

    Figure 3.  (a) X-ray double diffraction of Sample 1 and Sample 2; (b) enlarged images of satellite diffraction peaks of sample 1 and sample 2

    图 4  (a)Device 1结构示意图;(b) Device 1前腔面在电镜下的横截面图;(c)Device 2结构示意图;(d) Device 2在电镜下的横截面图

    Figure 4.  (a) Schematic diagram of Device 1; (b) SEM of Device 1 (c) Schematic diagram of Device 2; (d) SEM of Device 2

    图 5  (a) Device 1和Device 2在连续模式下的PIV曲线;(b) Device 1和Device 2在阈值电流下的光谱

    Figure 5.  (a) PIV curves of Device 1 and Device 2 in continuous wave; (b) Spectra of Device 1and Device 2 at Threshold Current

    图 6  (a) Device 1和Device 2在慢轴方向的远场;(b) Device 1和Device 2在快轴方向的远场

    Figure 6.  (a) Far field of Device 1 and Device 2 in the slow axis direction; (b) Far field of Device 1 and Device 2 in the fast axis direction

    表  1  不同材料的有效折射率[25]

    Table  1.   Effective refractive index of different materials

    Materialsdoping(cm−3)Refractive index
    InP substrate2×10173.084+2.00000E-4i
    InP2×10163.091+2.00000E-5i
    InGaAs2×10163.393+7.88405E-5i
    Active2×10173.245+4.01336E-5i
    InP2×10173.084+2.00000E-4i
    InP1×10173.088+1.00000E-4i
    InP5×10182.893+5.00000E-3i
    InP2×10192.188+2.70000E-2i
    Au/3.319+1.84110E+1i
    Si3N4/1.358+6.50000E-4i
    Fe:InP/3.099+6.34895E-8i
    下载: 导出CSV

    表  2  300 K温度下不同材料的热导率[28]

    Table  2.   Thermal conductivity of different materials at 300 K

    Materials300 K thermal conductivity[W/(m·K)]
    InP72.18
    InGaAs4.64
    Active(longitudinal)0.76
    Active(lateral)4.48
    Si3N413.9
    AuSn57
    Cu398.03
    AlN257.5
    下载: 导出CSV
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出版历程
  • 收稿日期:  2024-01-03
  • 录用日期:  2024-03-13
  • 网络出版日期:  2024-05-10

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