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双有源区结构4.7 μm中波红外量子级联激光器

王渝沛 章宇航 罗晓玥 钱晨灏 程洋 赵武 魏志祥 韩迪仪 孙方圆 王俊 周大勇

王渝沛, 章宇航, 罗晓玥, 钱晨灏, 程洋, 赵武, 魏志祥, 韩迪仪, 孙方圆, 王俊, 周大勇. 双有源区结构4.7 μm中波红外量子级联激光器[J]. 中国光学(中英文), 2024, 17(5): 1042-1049. doi: 10.37188/CO.2023-0239
引用本文: 王渝沛, 章宇航, 罗晓玥, 钱晨灏, 程洋, 赵武, 魏志祥, 韩迪仪, 孙方圆, 王俊, 周大勇. 双有源区结构4.7 μm中波红外量子级联激光器[J]. 中国光学(中英文), 2024, 17(5): 1042-1049. doi: 10.37188/CO.2023-0239
WANG Yu-pei, ZHANG Yu-hang, LUO Xiao-yue, QIAN Chen-hao, CHENG Yang, ZHAO Wu, WEI Zhi-xiang, HAN Di-yi, SUN Fang-yuan, WANG Jun, ZHOU Da-yong. 4.7 μm mid-wave infrared quantum cascade laser with double active region structure[J]. Chinese Optics, 2024, 17(5): 1042-1049. doi: 10.37188/CO.2023-0239
Citation: WANG Yu-pei, ZHANG Yu-hang, LUO Xiao-yue, QIAN Chen-hao, CHENG Yang, ZHAO Wu, WEI Zhi-xiang, HAN Di-yi, SUN Fang-yuan, WANG Jun, ZHOU Da-yong. 4.7 μm mid-wave infrared quantum cascade laser with double active region structure[J]. Chinese Optics, 2024, 17(5): 1042-1049. doi: 10.37188/CO.2023-0239

双有源区结构4.7 μm中波红外量子级联激光器

基金项目: 国家重点研发计划(No. 2018YFB1107300)
详细信息
    作者简介:

    王 俊(1965—),男,湖北仙桃人,博士,教授,博士生导师,1997 年于加拿大McMaster大学取得博士学位,主要从事半导体激光器方面的研究。E-mail:wjdz@scu.edu.cn

  • 中图分类号: TP394.1;TH691.9

4.7 μm mid-wave infrared quantum cascade laser with double active region structure

Funds: Supported by the National Key Research and Development Program of China (No. 2018YFB1107300)
More Information
  • 摘要:

    本文报道了一种基于双有源区的4.7 μm中波红外量子级联激光器,脊宽为9.5 μm,可实现室温连续基横模工作。通过在单有源区中心插入0.8 μm InP间隔层,将原有的单有源区转变成双有源区结构,可显著降低器件有源区的峰值温度,同时抑制高阶横模的产生。在288 K温度下,腔长为5 mm的双有源区器件的阈值电流密度为1.14 kA/cm2,连续输出功率为0.71 W,快轴发散角为27.3°,慢轴发散角为18.1°。同采用常规单有源区结构器件相比,采用双有源区结构的器件,其最大光输出功率未出现退化,同时器件慢轴方向由多模变化为基横模,光束质量得到了显著改善。本工作为改善高功率中波量子级联激光器的慢轴光束质量提供了一种解决思路。

     

  • 图 1  (a)有限元仿真结构示意图;(b) 在有源区插入不同厚度InP的横向模态的相对品质因子图

    Figure 1.  (a) Schematic diagram of the finite element simulation structure; (b) relative figure of merit for transverse modes when inserting different InP thicknesses in active region

    图 2  (a)单有源区器件及(b)双有源区器件热学仿真结果

    Figure 2.  Thermal simulation results of (a) single active region device and (b) double active region device

    图 3  Sample 1和Sample 2的(a)X射线双晶衍射及其(b)放大图

    Figure 3.  (a) X-ray double diffraction and their (b) enlarged images of Sample 1 and Sample 2

    图 4  (a) Device 1和(c) Device 2的结构示意图;(b) Device 1和(d) Device 2前腔面在电镜下的横截面图

    Figure 4.  Schematic diagram of (a) Device 1 and (c) Device 2; cross-sectional SEM images of the front cavity of (b) Device 1 and (d) Device 2

    图 5  (a) Device 1和Device 2在连续模式下的PIV曲线;(b) Device 1和Device 2在阈值电流下的光谱

    Figure 5.  (a) PIV curves of Device 1 and Device 2 in continuous wave; (b) spectra of Device 1 and Device 2 at threshold current

    图 6  Device 1和Device 2在(a)慢轴方向及(b)快轴方向的远场

    Figure 6.  Far fields of Device 1 and Device 2 in the (a) slow axis direction and (b) fast axis directions

    表  1  不同材料不同掺杂浓度的有效折射率[25]

    Table  1.   Effective refractive indexes of different materials with different doping conditions

    Materials Doping density Refractive index
    InP substrate 2×1017 3.084+2.00000E-4i
    InP 2×1016 3.091+2.00000E-5i
    InGaAs 2×1016 3.393+7.88405E-5i
    Active 2×1017 3.245+4.01336E-5i
    InP 2×1017 3.084+2.00000E-4i
    InP 1×1017 3.088+1.00000E-4i
    InP 5×1018 2.893+5.00000E-3i
    InP 2×1019 2.188+2.70000E-2i
    Au / 3.319+1.84110E+1i
    Si3N4 / 1.358+6.50000E-4i
    Fe:InP / 3.099+6.34895E-8i
    下载: 导出CSV

    表  2  300 K温度下不同材料的热导率[28]

    Table  2.   Thermal conductivities of different materials at 300 K temperature

    Materials Thermal conductivity/W·m−1·K−1
    InP 72.18
    InGaAs 4.64
    Active(longitudinal) 0.76
    Active(lateral) 4.48
    Si3N4 13.9
    AuSn 57
    Cu 398.03
    AlN 257.5
    下载: 导出CSV
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出版历程
  • 收稿日期:  2024-01-03
  • 修回日期:  2024-01-30
  • 录用日期:  2024-03-13
  • 网络出版日期:  2024-05-10

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