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638 nm光栅外腔窄线宽半导体激光器

刘野 刘宇 肖辉东 李洪玲 曲大鹏 郑权

刘野, 刘宇, 肖辉东, 李洪玲, 曲大鹏, 郑权. 638 nm光栅外腔窄线宽半导体激光器[J]. 中国光学(中英文), 2020, 13(6): 1249-1256. doi: 10.37188/CO.2020-0249
引用本文: 刘野, 刘宇, 肖辉东, 李洪玲, 曲大鹏, 郑权. 638 nm光栅外腔窄线宽半导体激光器[J]. 中国光学(中英文), 2020, 13(6): 1249-1256. doi: 10.37188/CO.2020-0249
LIU Ye, LIU Yu, XIAO Hui-dong, LI Hong-ling, QU Da-peng, ZHENG Quan. 638 nm narrow linewidth diode laser with a grating external cavity[J]. Chinese Optics, 2020, 13(6): 1249-1256. doi: 10.37188/CO.2020-0249
Citation: LIU Ye, LIU Yu, XIAO Hui-dong, LI Hong-ling, QU Da-peng, ZHENG Quan. 638 nm narrow linewidth diode laser with a grating external cavity[J]. Chinese Optics, 2020, 13(6): 1249-1256. doi: 10.37188/CO.2020-0249

638 nm光栅外腔窄线宽半导体激光器

doi: 10.37188/CO.2020-0249
基金项目: 吉林省科技发展计划项目(No. 20200401072GX)
详细信息
    作者简介:

    刘 野(1990—),女,吉林长春人,激光工程师,2016年于吉林大学仪器科学与电气工程学院获得硕士学位,现工作于长春新产业光电技术有限公司,主要从事窄线宽半导体激光器的研究。E-mail:liuye@cnilaser.com

  • 中图分类号: TN248.4

638 nm narrow linewidth diode laser with a grating external cavity

Funds: Jilin Province Science and Technology Development Plan (No. 20200401072GX)
More Information
  • 摘要: 本文采用反射式全息光栅作为外部反馈元件,设计了638 nm光栅外腔窄线宽激光器。使用高分辨率的光谱分析仪检测了Littrow结构的外腔半导体激光器的输出光谱,并进一步研究了该激光器的阈值和波长调谐特性。实验采用了2400 l/mm和1800 l/mm两种刻线密度的反射式全息光栅进行研究,在120 mA的注入电流下,采用刻线密度为2400 l/mm的光栅外腔激光器的输出功率是45.2 mW,将阈值电流由60 mA降至51 mA,下降幅度为11%;采用刻线密度为1800 l/mm的光栅外腔激光器的输出功率是38.7 mW,将阈值电流由60 mA降至47 mA,下降幅度为24%,光谱线宽均压窄至3.5 pm,且分别了实现了9.4 nm和10.5 nm宽度的波长调谐。实验结果表明,采用反射式全息光栅的Littrow结构用于半导体激光器,极大地改善了半导体激光器的性能。

     

  • 图 1  实验装置示意图

    Figure 1.  Schematic diagram of experiment setup

    图 2  (a)自由运行的LD的P-I特性曲线;(b)不同注入电流下的光谱特性

    Figure 2.  (a) P-I characteristic curve of the free-running diode laser; (b) spectral characteristics at different currents

    图 3  (a)光栅外腔半导体激光器的P-I特性曲线;(b)2400 l/mm及(c) 1800 l/mm全息光栅外腔激光器在不同电流下的光谱特性

    Figure 3.  (a) P-I characteristic curve of the grating external cavity diode laser; spectral characteristic of (b) 2400 l/mm and (c) 1800 l/mm holographic grating external cavity laser at different currents

    图 4  (a)波长调谐范围随注入电流的变化情况;当注入电流为70 mA时(b)2400 l/mm及(c) 1800 l/mm全息光栅外腔激光器归一化光谱图

    Figure 4.  (a) Wavelength tuning range versus injection current; normalized emission spectra of (b) 2400 l/mm and (c) 1800 l/mm holographic grating external cavity lasers with injection current of 70 mA

    图 5  两种不同刻线密度下光栅外腔半导体激光器阈值电流随激射波长的变化

    Figure 5.  Threshold current versus lasing wavelength for grating external cavity diode laser with different line densities

    图 6  120 mA注入电流下光栅外腔半导体激光器输出功率随激射波长的变化情况

    Figure 6.  Output power of grating external cavity diode laser versus lasing wavelength with injection current of 120 mA

    图 7  光栅外腔半导体激光器的输出功率稳定性测试结果

    Figure 7.  Output power stability of the grating external cavity diode laser

    图 8  120 mA注入电流下光栅外腔半导体激光器的输出光谱特性

    Figure 8.  Spectral characteristic of the grating external cavity diode laser with injection current of 120 mA

    图 9  外腔激光器的波长及线宽稳定性测试结果

    Figure 9.  Wavelength stability and line width stability of the external cavity laser

    表  1  2400 l/mm 全息光栅外腔激光器与638 nm半导体激光器参数性能对比结果

    Table  1.   Performance comparison of 2400 l/mm holographic grating external cavity laser and 638 nm semiconductor laser

    Thresholdcurrent/
    mA
    Output power/
    mW(120mA injection current)
    Line
    width/
    nm
    Wavelength tuning range/
    nm
    Diode laser6050.61.83
    Diode laser with grating external cavity5145.20.003510
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出版历程
  • 收稿日期:  2019-12-27
  • 修回日期:  2020-02-22
  • 网络出版日期:  2020-11-10
  • 刊出日期:  2020-12-01

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