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850 nm锥形半导体激光器的温度特性

黄海华 刘云 杨晔 秦莉 宁永强 王立军

黄海华, 刘云, 杨晔, 秦莉, 宁永强, 王立军. 850 nm锥形半导体激光器的温度特性[J]. 中国光学, 2013, 6(2): 201-207. doi: 10.3788/CO.20130602.0201
引用本文: 黄海华, 刘云, 杨晔, 秦莉, 宁永强, 王立军. 850 nm锥形半导体激光器的温度特性[J]. 中国光学, 2013, 6(2): 201-207. doi: 10.3788/CO.20130602.0201
HUANG Hai-hua, LIU Yun, YANG Ye, QIN Li, NING Yong-qiang, WANG Li-jun. Temperature characteristics of 850 nm tapered semiconductor lasers[J]. Chinese Optics, 2013, 6(2): 201-207. doi: 10.3788/CO.20130602.0201
Citation: HUANG Hai-hua, LIU Yun, YANG Ye, QIN Li, NING Yong-qiang, WANG Li-jun. Temperature characteristics of 850 nm tapered semiconductor lasers[J]. Chinese Optics, 2013, 6(2): 201-207. doi: 10.3788/CO.20130602.0201

850 nm锥形半导体激光器的温度特性

doi: 10.3788/CO.20130602.0201
基金项目: 

中国科学院长春分院资助项目(No.2011CJT0003);吉林省科技厅发展计划资助项目(No.201105026;No.20112106)

详细信息
    作者简介:

    黄海华(1987—),男,江西抚州人,硕士研究生,主要从事半导体光电子器件方面的研究。E-mail:wong2h@yahoo.cn;秦 莉(1969—),女,黑龙江鹤岗人,研究员,主要从事大功率垂直腔面发射激光器及应用方面的研究。E-mail:qinliciomp@yahoo.com.cn

    通讯作者:

    刘云, E-mail:hx5252@sohu.com

  • 中图分类号: TN248.4

Temperature characteristics of 850 nm tapered semiconductor lasers

More Information
    Corresponding author: LIU Yun
  • 摘要: 采用激射波长为850 nm的AlGaInAs/AlGaAs梯度折射率波导分别限制增益量子阱结构的外延片,分别制备了具有锥形结构和条形结构的半导体激光器,并对比分析了两者的温度特性。结果显示,测试温度为20~70 ℃时,锥形结构器件的特征温度为164 K,远高于条形结构器件的96 K;占空比为0.5%(t=50 s, f=100 Hz),1 000 mA脉冲电流注入条件下,锥形激光器和条形激光器的波长漂移系数分别为0.25和0.28 nm/K;测试温度50 ℃时,锥形激光器和条形激光器的光谱半高宽分别约为1.12和1.24 nm。实验结果表明:相同外延层结构条件下,锥形激光器比条形激光器拥有更高的特征温度。
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出版历程
  • 收稿日期:  2012-12-11
  • 修回日期:  2013-02-13
  • 刊出日期:  2013-04-10

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